Manufacture of amorphous silicon

Abstract

Abstract PURPOSE:To increase the utilizing efficiency of silane gas by causing plasma discharge after heating the silane gas to the temperature which is slightly lower than a decomposition temperature of that. CONSTITUTION:Gas is introduced into an oven core tube from a gas bomb 21a of silane, e.g., 20% of monosilane diluted by hydrogen and if necessary, the bomb 21b of a doping gas through a pipe 25c. Meanwhile, exhaust of the air in the oven core tube is continued by a mechanical booster pump 32 and an oil rotary pump 33 so as to make the pressure 0.5-1.5Torr. At the same time, the inside of oven core tube is heated to 200 deg.C by an electric oven 26 and high frequency waves are applied to two sets of electrodes connected by every two electrodes by a high frequency oscillator 31. After that, the wide part 35 of the gas pipe is heated to 350-390 deg.C which is slightly lower than the decomposition temperature 400 deg.C of monosilane gas by a heater 36. The monosilane gas which has been flowing in the gas pipe 25c slows down in the wide part 35 where it is heated sufficiently and it is introduced into the oven core tube. As this gas is given sufficient thermal energy, decomposition by plasma discharge occurs easily.

Inventors

• 👤 Tsutomu Otake
• 👤 大竹　勉

Bibliographic Details