Method of fabricating electrical components in high density substrates

Claim 1

A method of making an integrated resistor and capacitor in a substrate, comprising: applying a resistive layer over an underlying substrate; applying an electrically conductive layer over the resistive layer; applying a first mask over selected portions of the conductive layer for defining the resistor and a bottom electrode of the capacitor leaving other portions of the layers uncovered; etching away the uncovered portions of the conductive and resistive layers to form a resistor and a bottom electrode; removing the first mask; applying a second mask covering the resistor but leaving a portion of the conductive layer over the bottom electrode uncovered; etching the uncovered conductive layer; removing the second mask; oxidizing the top of the bottom electrode to form an insulator for the capacitor using the unetched conductive layer as a mask; applying a third mask leaving a portion of the insulator uncovered; applying a second conductive layer to the insulator forming an upper electrode of the capacitor; removing the third mask; applying a fourth mask leaving openings for via pillars from the resistor and from the electrodes; applying conductive via pillars in the openings to the resistor and to the electrodes; stripping the fourth mask; and stripping any conductive layer between the via pillars down to the resistive layer.

Claim 2

A method of making an integrated resistor and capacitor in a substrate, comprising: applying a resistive layer over an underlying substrate; applying an electrically conductive layer over the resistive layer; applying a first mask over selected portions of the conductive layer for defining the resistor and a bottom electrode of the capacitor leaving other portions of the layers uncovered; etching away the uncovered portions of the conductive and resistive layers to form a resistor and a bottom electrode; removing the first mask; applying a second mask covering the resistor but leaving a portion of the conductive layer over the bottom electrode uncovered; etching the uncovered conductive layer; removing the second mask; oxidizing the top of the bottom electrode to form an insulator for the capacitor using the unetched conductive layer as a mask; applying a third mask leaving a portion of the insulator uncovered; applying a second conductive layer to the insulator forming an upper electrode of the capacitor; removing the third mask; applying a fourth mask leaving openings for via pillars from the resistor and from the electrodes; applying conductive via pillars in the openings to the resistor and to the electrodes; stripping the fourth mask; and stripping any conductive layer between the via pillars down to the resistive layer.

Claim 7

A method of making an integrated resistor and capacitor in a substrate, comprising the following steps in the sequence set forth: applying a resistive layer over an underlying substrate; applying a conductive layer of titanium over the resistive layer; applying a first photopolymer mask over selected portions of the titanium layer for defining the resistor and a bottom electrode of the capacitor leaving other portions of the titanium uncovered; etching away the uncovered portions of the titanium and resistive layer to form a resistor and a bottom electrode; removing the first mask; applying a second mask covering the resistor, but leaving a portion of the titanium layer over the bottom electrode uncovered; etching the uncovered titanium layer including etching back the titanium layer from the edge of the second mask; removing the second mask; oxidizing the top of the bottom electrode to form an insulator for the capacitor using the unetched titanium layer as a mask; reapplying the second mask leaving a portion of the insulator uncovered; applying a conductive layer to the insulator forming an upper electrode of the capacitor; again removing the second mask; applying a third mask leaving openings for via pillars from the resistor and from the electrodes; applying conductive via pillars in the openings to the resistor and to the electrode; removing the third mask; and stripping the titanium layer between the via pillars down to the resistive layer.

Claim 8

A method of making an integrated resistor and capacitor in a substrate, comprising the following steps in the sequence set forth: applying a resistive layer over an underlying substrate; applying a conductive layer of titanium over the resistive layer; applying a first photopolymer mask over selected portions of the titanium layer for defining the resistor and a bottom electrode of the capacitor leaving other portions of the titanium uncovered; etching away the uncovered portions of the titanium and resistive layer to form a resistor and a bottom electrode; removing the first mask; applying a second mask covering the resistor, but leaving a portion of the titanium layer over the bottom electrode uncovered; etching the uncovered titanium layer including etching back the titanium layer from the edge of the second mask; removing the second mask; oxidizing the top of the bottom electrode to form an insulator for the capacitor using the unetched titanium layer as a mask; reapplying the second mask leaving a portion of the insulator uncovered; applying a conductive layer to the insulator forming an upper electrode of the capacitor; again removing the second mask; applying a third mask leaving openings for via pillars from the resistor and from the electrodes; applying conductive via pillars in the openings to the resistor and to the electrode; removing the third mask; and stripping the titanium layer between the via pillars down to the resistive layer.

Claim 11

A method of making an integrated capacitor in a substrate, comprising the following steps in the sequence set forth: applying a resistive layer over an underlying substrate; applying an electrically conductive layer over the resistive layer; applying a first mask over selected portions of the conductive layer for defining a bottom electrode of the capacitor leaving other portions of the layers uncovered; etching away the uncovered portions of the conductive and resistive layers to form a bottom electrode; removing the first mask; applying a second mask leaving a portion of the conductive layer over the bottom electrode uncovered; etching the uncovered conductive layer; removing the second mask; oxidizing the top of the bottom electrode to form an insulator for the capacitor using the unetched conductive layer as a mask, applying a third mask leaving a portion of the insulator uncovered; applying a second conductive layer to the insulator forming an upper electrode of the capacitor; removing the third mask; applying a fourth mask leaving openings for via pillars from the electrodes; applying conductive via pillars in the openings to the electrodes; removing the fourth mask; and stripping any conductive layer between the via pillars down to the resistive layer.

Claim 12

A method of making an integrated capacitor in a substrate, comprising the following steps in the sequence set forth: applying a resistive layer over an underlying substrate; applying an electrically conductive layer over the resistive layer; applying a first mask over selected portions of the conductive layer for defining a bottom electrode of the capacitor leaving other portions of the layers uncovered; etching away the uncovered portions of the conductive and resistive layers to form a bottom electrode; removing the first mask; applying a second mask leaving a portion of the conductive layer over the bottom electrode uncovered; etching the uncovered conductive layer; removing the second mask; oxidizing the top of the bottom electrode to form an insulator for the capacitor using the unetched conductive layer as a mask, applying a third mask leaving a portion of the insulator uncovered; applying a second conductive layer to the insulator forming an upper electrode of the capacitor; removing the third mask; applying a fourth mask leaving openings for via pillars from the electrodes; applying conductive via pillars in the openings to the electrodes; removing the fourth mask; and stripping any conductive layer between the via pillars down to the resistive layer.

Claim 17

A method of making an integrated capacitor in a substrate, comprising: applying a resistive layer over an underlying substrate; applying a conductive layer of titanium over the resistive layer; applying a first photopolymer mask over selected portions of the titanium layer for defining a bottom electrode of the capacitor leaving other portions of the titanium uncovered; etching away the uncovered portions of the titanium and resistive layer to form a bottom electrode; removing the first mask; applying a second mask leaving a portion of the titanium layer over the bottom electrode uncovered; etching the uncovered titanium layer including etching back the titanium layer from the edge of the second mask; removing the second mask; oxidizing the top of the bottom electrode to form an insulator for the capacitor using the unetched titanium layer as a mask; reapplying the second mask leaving a portion of the insulator uncovered; applying a conductive layer to the insulator forming an upper electrode of the capacitor; again removing the second mask; applying a third mask leaving openings for via pillars from the electrodes; applying conductive via pillars in the openings to the electrodes; removing the third mask; and stripping the titanium layer between the via pillars.

Claim 18

A method of making an integrated capacitor in a substrate, comprising: applying a resistive layer over an underlying substrate; applying a conductive layer of titanium over the resistive layer; applying a first photopolymer mask over selected portions of the titanium layer for defining a bottom electrode of the capacitor leaving other portions of the titanium uncovered; etching away the uncovered portions of the titanium and resistive layer to form a bottom electrode; removing the first mask; applying a second mask leaving a portion of the titanium layer over the bottom electrode uncovered; etching the uncovered titanium layer including etching back the titanium layer from the edge of the second mask; removing the second mask; oxidizing the top of the bottom electrode to form an insulator for the capacitor using the unetched titanium layer as a mask; reapplying the second mask leaving a portion of the insulator uncovered; applying a conductive layer to the insulator forming an upper electrode of the capacitor; again removing the second mask; applying a third mask leaving openings for via pillars from the electrodes; applying conductive via pillars in the openings to the electrodes; removing the third mask; and stripping the titanium layer between the via pillars.