US3778689A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film capacitors and method for manufacture
Assignee: HP Inc
•
Filing: 1972-05-22
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Granted: 1973-12-11
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Expires: 1992-05-22
Abstract
Abstract A thin film capacitor and resistor circuit is disclosed, each capacitor being formed by a structure including a metallic film of an insulating substrate, the metallic film having an oxidized surface formed by anodizing, an oxide layer on the oxidized surface of the metallic film, and a pair of spaced-apart conductor layers over the oxide layer, each resistor being formed by a resistive film on the substrate and a pair of spaced-apart conductor layers connecting with the ends of the resistive film. In the manufacture of the circuit, a predeposited substrate is produced that may be utilized by circuit designers in the subsequent fabrication of custom microcircuits. A heat treating technique is employed in trimming the resistors of the circuit.
Inventors
- 👤 G Bodway
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:34
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/80; H10D86/85; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
30 words
A thin film capacitor as in claim 1 wherein the oxidized upper surface of said metallic film element is an anodized upper surface extending entirely over said metallic film element.
Claim 2
Dependent Claim
24 words
A thin film capacitor as in claim 1 wherein said metallic film element is a tantalum film element with a tantalum oxide upper surface
Claim 3
Dependent Claim
17 words
A thin film capacitor as in claim 1 wherein said oxide layer is a silicon oxide layer.
Claim 4
Dependent Claim
18 words
A thin film capacitor as in claim 4 wherein said silicon oxide layer is a silicon dioxide layer.
Claim 5
Independent Claim
114 words
A method for manufacturing a thin film multicapacitor structure, said method comprising the steps of; forming a plurality of metallic film elements on an upper surface of an insulating substrate; forming an oxidized upper surface on each of said metallic film elements; forming an oxide layer entirely over the upper surface of said substrate and the oxidized upper surface of each of said metallic film elements; and forming a separate pair of spaced-apart electrically conductive elements on said oxide layer over each of said metallic film elements to form a pair of plates for the capacitor defined between each of said metallic film elements and the two associated pair of spaced-apart electrically conductive elements.
Claim 6
Dependent Claim
34 words
A method as in claim 6 wherein the step of forming an oxidized upper surface on each of said metallic film elements comprises anodizing the upper surface of each of said metallic film elements.
Claim 7
Dependent Claim
71 words
A method as in claim 6 wherein: the step of forming said metallic film elements comprises depositing a layer of tantalum on the upper surface of said substrate and selectively etching said layer of tantalum to form said metallic film elements; and the step of forming an oxidized upper surface on each of said metallic film elements comprises anodizing the entire upper surface of each of said tantalum metallic film elements.
Claim 8
Dependent Claim
43 words
A method as in claim 8 wherein the step of forming said oxide layer comprises depositing a layer of silicon oxide over the entire upper surface of said substrate and the entire anodized upper surface of each of said tantalum metallic film elements.
Claim 9
Independent Claim
98 words
A method for fabricating a thin film capacitor, said method comprising the steps of: forming a metallic film element on an upper surface of an insulating substrate; oxidizing an upper surface of said metallic film element; forming an oxide layer entirely over the upper surface of said insulating substrate and the oxidized upper surface of said metallic film element; and forming a pair of spaced-apart metallic elements on said oxide layer over said metallic film element to form a pair of plates for the capacitor defined between said metallic film element and said pair of spaced-apart metallic elements.
Claim 10
Dependent Claim
30 words
A method as in claim 10 wherein the step of oxidizing the upper surface of said metallic film element comprises anodizing the entire upper surface of said metallic film element.
Claim 11
Dependent Claim
61 words
A method as in claim 11 wherein: the step of forming said metallic film element comprises forming a tantalum film element on the upper surface of said substrate; and the step of forming said oxide layer comprises forming a layer of silicon oxide entirely over the upper surface of said substrate and the anodized upper surface of said metallic film element.
References Cited (Backward Citations)
US2968752A
Cited
US3365626A
Cited
US3253199A
Cited
US3273033A
Cited
US3466719A
Cited
US3607679A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-12-10 | 1977-06-11 | 1977-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-12-10 | 1981-06-11 | 1981-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-12-10 | 1985-06-11 | 1985-12-11 | $7700.00 | Window Closed / Lapsed |