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US3607679A
Expired / Lapsed
US
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Method for the fabrication of discrete rc structure
Assignee: AT&T Inc
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Filing: 1969-05-05
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Granted: 1971-09-21
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Expires: 1989-05-05
Abstract
Abstract A technique for the fabrication of tantalum-based resistors and capacitors on a single substrate involves a series of process steps wherein an anodic tantalum oxide film initially formed on areas destined for use as either resistors or capacitors serves as an etch stop when removing subsequently deposited tantalum components therefrom.
Inventors
- 👤 David O Melroy
- 👤 William H Orr
- 👤 Frank P Pelletier
- 👤 Willis H Yocom
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 14:37
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/40; H01C; H01C17/00; H01C17/06; H01C17/075; H01C17/12; H10; H10N; H10N97/00; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9335; Y10S428/938; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49099; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12771; Y10T428/12806; Y10T428/12819; Y10T428/12861; Y10T428/12944
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
21 words
A process in accordance with claim 1 wherein said tantalum nitride and beta tantalum layers are deposited by cathodic sputtering techniques.
Claim 2
Dependent Claim
13 words
A process in accordance with claim 1 wherEin said contact electrode comprises NICHROME-gold.
Claim 3
Dependent Claim
158 words
A process for the fabrication of a thin film discrete RC network which comprises the steps of (a) depositing a layer of beta tantalum upon a substrate member, (b) generating a resistor window and a capacitor slit in said beta tantalum layer, (c) anodizing said beta tantalum layer in those areas destined for use as a capacitor, (d) depositing a layer of tantalum nitride over the entirety of the resultant assembly, (e) depositing a layer of a contact electrode upon said tantalum nitride layer and removing said contact electrode in those areas destined for use as resistors and capacitors, the underlying tantalum nitride being removed from capacitor areas, (f) anodizing and stabilizing resultant exposed resistor areas, (g) reanodizing said capacitor area, (h) depositing a contact electrode over the entirety of said assembly, and (i) removing said contact electrode from the resistor and removing all film layers from nonconducting areas of the resultant structure, thereby defining the capacitor counterelectrode.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-09-20 | 1975-03-22 | 1975-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-09-20 | 1979-03-22 | 1979-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-09-20 | 1983-03-22 | 1983-09-21 | $7700.00 | Window Closed / Lapsed |