US5079180A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating a raised source/drain transistor
Assignee: Texas Instruments Inc
•
Filing: 1990-08-16
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Granted: 1992-01-07
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Expires: 2010-08-16
Abstract
Abstract A raised source/drain transistor is provided having thin sidewall spacing insulators (54) adjacent the transistor gate (48). A first sidewall spacer (64) is disposed adjacent thin sidewall spacing insulator (54) and raised source/drain region (60). A second sidewall spacer (66) is formed at the interface between field insulating region (44) and raised source/drain region (60).
Inventors
- 👤 Mark S. Rodder
- 👤 Richard A. Chapman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:55
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10D30/0275
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
117 words
A method of forming a transistor structure associated with a semiconductor substrate, comprising: forming first and second insulating regions disposed outwardly from said substrate to define a moat area therebetween; forming a gate disposed outwardly from said moat area, said gate including sidewalls and defining a channel region in the substrate thereunder; forming a sidewall insulator adjacent said sidewalls of said gate; forming a raised moat region disposed along said moat and between said sidewall insulator and said first insulating region; and forming an insulating first sidewall spacer disposed adjacent said sidewall insulator and said raised moat region with at least a portion of said first sidewall spacer disposed between said gate and said raised moat region.
Claim 2
Independent Claim
117 words
A method of forming a transistor structure associated with a semiconductor substrate, comprising: forming first and second insulating regions disposed outwardly from said substrate to define a moat area therebetween; forming a gate disposed outwardly from said moat area, said gate including sidewalls and defining a channel region in the substrate thereunder; forming a sidewall insulator adjacent said sidewalls of said gate; forming a raised moat region disposed along said moat and between said sidewall insulator and said first insulating region; and forming an insulating first sidewall spacer disposed adjacent said sidewall insulator and said raised moat region with at least a portion of said first sidewall spacer disposed between said gate and said raised moat region.
Claim 3
Dependent Claim
37 words
The method of claim 1 and further including forming a region within said raised moat region and adjacent said first sidewall spacer, said region being of a different dopant concentration than the remainder of said moat region.
Claim 4
Dependent Claim
59 words
The method of claim 1 wherein said step of forming the sidewall insulator comprises forming a thin sidewall insulator, said thin sidewall insulator of a thickness such that dopants implanted through said raised moat region may move laterally within said substrate to electrically connect said raised moat region to said channel region, while maintaining shallow junctions within said substrate.
Claim 5
Dependent Claim
28 words
The method of claim 3 wherein said step of forming said thin sidewall insulator comprises forming the thin sidewall insulator of a thickness less than nine hundred angstroms.
Claim 6
Dependent Claim
18 words
The method of claim 1 wherein said step of forming the raised moat region comprises forming epitaxial silicon.
Claim 7
Dependent Claim
18 words
The method of claim 1 wherein said step of forming the first sidewall spacer comprises forming an insulator.
Claim 8
Dependent Claim
22 words
The method of claim 1 and further including forming a junction region prior to said step of forming said raised moat region.
Claim 9
Dependent Claim
21 words
The method of claim 1 and further including forming a junction region after said step of forming said raised moat region.
Claim 10
Independent Claim
100 words
A method of forming a transistor structure associated with a semiconductor substrate, comprising: forming first and second insulating regions disposed outwardly from said substrate to define a moat area therebetween; forming a gate disposed outwardly from said moat area, said gate including sidewalls and defining a channel region in the substrate thereunder; forming a sidewall insulator adjacent said sidewalls of said gate; forming a raised moat region disposed along said moat area and between said sidewall insulator and said first insulating region; and forming an insulating first sidewall spacer disposed adjacent said first insulating region and said raised moat region.
Claim 11
Independent Claim
100 words
A method of forming a transistor structure associated with a semiconductor substrate, comprising: forming first and second insulating regions disposed outwardly from said substrate to define a moat area therebetween; forming a gate disposed outwardly from said moat area, said gate including sidewalls and defining a channel region in the substrate thereunder; forming a sidewall insulator adjacent said sidewalls of said gate; forming a raised moat region disposed along said moat area and between said sidewall insulator and said first insulating region; and forming an insulating first sidewall spacer disposed adjacent said first insulating region and said raised moat region.
Claim 12
Dependent Claim
52 words
The method of claim 9 wherein said sidewall insulator adjacent said sidewall of said gate is of a thickness such that dopants implanted through said raised moat region may move laterally within said substrate to electrically connect said raised moat region to said channel region, while maintaining shallow junctions within said substrate.
Claim 13
Dependent Claim
26 words
The method of claim 9 wherein said step of forming the thin insulator comprises forming the thin insulator of a thickness less than nine hundred angstroms.
Claim 14
Dependent Claim
33 words
The method of claim 9 forming a second sidewall spacer disposed adjacent said sidewall insulator and said raised moat region, wherein said step of forming the second sidewall spacer comprises forming an insulator.
Claim 15
Dependent Claim
37 words
The method of claim 9 and further including forming a region within said raised moat region and adjacent said first sidewall spacer, said region being of a different dopant concentration that the remainder of said moat region.
Claim 16
Dependent Claim
18 words
The method of claim 9 wherein said step of forming the raised moat region comprises forming epitaxial silicon.
Claim 17
Independent Claim
148 words
A method of forming a transistor structure associated with a semiconductor substrate, comprising: forming first and second insulating regions disposed outwardly from said substrate to define a moat area therebetween; forming a gate disposed outwardly from said moat area, said gate including sidewalls and defining a channel region in the substrate thereunder; forming a sidewall insulator adjacent said sidewalls of said gate; forming a raised moat region disposed along said moat and between said sidewall insulator and said first insulating region; forming an insulating first sidewall spacer disposed adjacent said sidewall insulator and said raised moat region with at least a portion of said first sidewall spacer disposed between said gate and said raised moat region; and further including forming a second sidewall spacer disposed adjacent said first insulating region and said raised moat region, wherein said step of forming the second sidewall spacer comprises forming an insulator.
Claim 18
Independent Claim
148 words
A method of forming a transistor structure associated with a semiconductor substrate, comprising: forming first and second insulating regions disposed outwardly from said substrate to define a moat area therebetween; forming a gate disposed outwardly from said moat area, said gate including sidewalls and defining a channel region in the substrate thereunder; forming a sidewall insulator adjacent said sidewalls of said gate; forming a raised moat region disposed along said moat and between said sidewall insulator and said first insulating region; forming an insulating first sidewall spacer disposed adjacent said sidewall insulator and said raised moat region with at least a portion of said first sidewall spacer disposed between said gate and said raised moat region; and further including forming a second sidewall spacer disposed adjacent said first insulating region and said raised moat region, wherein said step of forming the second sidewall spacer comprises forming an insulator.
Claim 19
Dependent Claim
46 words
The method of claim 15 wherein: said sidewall insulator is of a thickness such that dopants implanted through said raised moat region may move laterally within said substrate to electrically connect said raised moat region to said channel region, while maintaining shallow junctions within said substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-06 | 1995-07-08 | 1996-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-06 | 1999-07-08 | 2000-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-06 | 2003-07-08 | 2004-01-07 | $7700.00 | Window Closed / Lapsed |