Method of manufacturing a semiconductor device

Claim 1

A method of manufacturing a semiconductor device comprising the following steps: depositing a first insulation film on a semiconductor substrate in which a semiconductor element is incorporated; providing said first insulation film with a heat treatment in order to form a smooth surface on said first insulation film; forming a resist having a predetermined pattern on said first insulation film; forming a contact hole in said first insulation film using said resist as a mask; removing said resist; depositing a second insulation film along the surface of the shape of said semiconductor substrate which has been provided by all of said previous steps; forming a slope on the peripheral edge and the side wall of said contact hole by a second heat treatment; and removing said second insulation film formed on the bottom of said contact hole.

Claim 2

A method of manufacturing a semiconductor device comprising the following steps: depositing a first insulation film on a semiconductor substrate in which a semiconductor element is incorporated; providing said first insulation film with a heat treatment in order to form a smooth surface on said first insulation film; forming a resist having a predetermined pattern on said first insulation film; forming a contact hole in said first insulation film using said resist as a mask; removing said resist; depositing a second insulation film along the surface of the shape of said semiconductor substrate which has been provided by all of said previous steps; forming a slope on the peripheral edge and the side wall of said contact hole by a second heat treatment; and removing said second insulation film formed on the bottom of said contact hole.

Claim 5

A method of manufacturing a semiconductor device comprising the following steps: forming a MOS type semiconductor element which consists of a polycrystalline silicon gate layer on a gate oxidized film formed on a semiconductor substrate and a diffusion layer formed in the surface region of said semiconductor substrate adjacent to said polycrystalline silicon gate layer; depositing an insulation film on said polycrystalline gate layer and said semiconductor substrate; providing said insulation film with a first heat treatment so as to form a smooth surface on said insulation film; forming a resist having a predetermined pattern on said insulation film; forming a first contact hole which reaches said polycrystalline silicon gate layer in said insulation film within a region of said polycrystalline silicon gate layer by using said resist as a mask and forming a second contact hole in said insulation film within a region of said diffusion layer while leaving part of said insulation film on the bottom thereof; removing said resist; forming a slope on the peripheral edge and the side wall of said first and second contact holes by using a second heat treatment; and removing said insulation film remaining on the bottom of said second contact hole.

Claim 6

A method of manufacturing a semiconductor device comprising the following steps: forming a MOS type semiconductor element which consists of a polycrystalline silicon gate layer on a gate oxidized film formed on a semiconductor substrate and a diffusion layer formed in the surface region of said semiconductor substrate adjacent to said polycrystalline silicon gate layer; depositing an insulation film on said polycrystalline gate layer and said semiconductor substrate; providing said insulation film with a first heat treatment so as to form a smooth surface on said insulation film; forming a resist having a predetermined pattern on said insulation film; forming a first contact hole which reaches said polycrystalline silicon gate layer in said insulation film within a region of said polycrystalline silicon gate layer by using said resist as a mask and forming a second contact hole in said insulation film within a region of said diffusion layer while leaving part of said insulation film on the bottom thereof; removing said resist; forming a slope on the peripheral edge and the side wall of said first and second contact holes by using a second heat treatment; and removing said insulation film remaining on the bottom of said second contact hole.