Production of semiconductor device

Abstract

Abstract PURPOSE: To prevent disconnection by selectively forming PSG on a substrate, covering the exposed substrate surface with oxidation resistant insulation masks, and softening the PSG then removing the masks and providing wiring layers. CONSTITUTION: (n) type layers 16, 17, oxide films 12, 15, gate electrode 13 and wiring 14 are formed on a (p) type Si substrate 11. After the surface is covered PSG 18, it is selectively opened 19, 20 and the surface is covered with a Si 3 N 4 film 21, which is then etched with patterns 21, 22. Next, the PSG 18 is softened by wet type high temperature oxidiation to remove serrations. When the masks 21, 22 are removed and Al wirings 23, 24 are formed, disconnection will not occur because of the absence of any serrations. The thickness of the PSG 18 is made larger than that of the gate electrode 13 COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Kazuhiko Tsuji
• 👤 Takashi Osone

Bibliographic Details