Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a low resistant and shallow diffused layer by diffusing an impurity to a semiconductor substrate by heat treatment, after forming a high melting point metallic film containing the impurity on said substrate and being changed into a silicide. CONSTITUTION:An Mo layer 5 containing e.g. B<+> at 10<16>-10<20>/cm<3> as the impurity which determines the conductivity type is formed on the N type Si substrate 4 whereon a selective oxide film 1, a gate oxide film 2, and a poly Si gate 3 are formed, and the interface 6 between the Mo layer 5 and the substrate 4 is mixed by Si ion implantation, thus forming a silicide layer 8. The impurity is diffused to the substrate 4 from said layer 8 by heat treatment after forming a protection film 9, and accordingly a shallow diffused layer 10 which forms a P-N junction between the substrate 4 is formed.

Inventors

• 👤 Shozo Okada
• 👤 岡田　昌三
• 👤 Masanori Fukumoto
• 👤 正紀 福本
• 👤 Shohei Shinohara
• 👤 篠原　昭平
• 👤 Juro Yasui
• 👤 安井　十郎
• 👤 Koichi Kugimiya
• 👤 公一 釘宮

Bibliographic Details