US4677736A
Expired / Lapsed
US
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Self-aligned inlay transistor with or without source and drain self-aligned metallization extensions
Assignee: Intersil Corp
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Filing: 1986-04-17
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Granted: 1987-07-07
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Expires: 2006-04-17
Abstract
Abstract A self-aligned process is described for depositing gate electrode material in an inlay field effect transistor. The process particularly provides means for inclusion of lightly doped source and drain extensions to minimize high field effects in the channel region. The process described herein is also particularly useful for providing source and drain contact metal which also acts as an ion implantation mask layer during several of the process steps. The method described herein is usable in conventional VLSI fabrication production facilities.
Inventors
- 👤 Dale M. Brown
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:29
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10D30/0273; H10D30/60; H10D30/0223; H10D30/0227; H10P; H10P30/00; H10P30/20; H10P30/22; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
219 words
A method of fabricating field effect transistors, said method comprising the steps of: forming an active region in a semiconductor substrate, said active region being surrounded by insultative material; forming a first ion implantation mask layer in said active region, said first mask layer being disposed in substantially the pattern desired for a gate electrode for said field effect transistor; forming doped regions in said active region on either side of said first mask layer so as to form source and drain regions in said semiconductor substrate; depositing a second ion implantation mask layer over said substrate and planarizing said second mask layer at least down to the level of said first mask layer said first and second mask layers comprising distinct material; removing said first mask layer; forming oxide spacers ont he sidewalls of said second mask layer in said active region; forming a gate insultative layer on said substrate between said sidewall spacers; depositing conductive gate electrode material over said insulative gate material and between said sidewall spacers, whereby a gate electrode for said field effect transistor is formed; planarizing said gate electrode material at least to the level of said second mask layer; selectively removing said sidewall spacer material; and forming less heavily doped regions on either side of said gate electrode in said semiconductor substrate.
Claim 2
Independent Claim
219 words
A method of fabricating field effect transistors, said method comprising the steps of: forming an active region in a semiconductor substrate, said active region being surrounded by insultative material; forming a first ion implantation mask layer in said active region, said first mask layer being disposed in substantially the pattern desired for a gate electrode for said field effect transistor; forming doped regions in said active region on either side of said first mask layer so as to form source and drain regions in said semiconductor substrate; depositing a second ion implantation mask layer over said substrate and planarizing said second mask layer at least down to the level of said first mask layer said first and second mask layers comprising distinct material; removing said first mask layer; forming oxide spacers ont he sidewalls of said second mask layer in said active region; forming a gate insultative layer on said substrate between said sidewall spacers; depositing conductive gate electrode material over said insulative gate material and between said sidewall spacers, whereby a gate electrode for said field effect transistor is formed; planarizing said gate electrode material at least to the level of said second mask layer; selectively removing said sidewall spacer material; and forming less heavily doped regions on either side of said gate electrode in said semiconductor substrate.
Claim 3
Dependent Claim
17 words
The method of claim 1 further including the step of redepositing a layer of spacer oxide material.
Claim 4
Dependent Claim
27 words
The method of claim 2 further including the step of planarizing said redeposited spacer oxide layer at least down to the level of said second mask layer.
Claim 5
Dependent Claim
13 words
The method of claim 1 in which said second mask layer comprises metal.
Claim 6
Dependent Claim
21 words
The method of claim 4 in which said metal is selected from the group consisting of tungsten molybdenum, and combinations thereof.
Claim 7
Dependent Claim
35 words
The method of claim 1 in which said gate pattern increases in width as said gate pattern leaves said active region so as to provide a gate electrode contact pad outside of said active region.
Claim 8
Dependent Claim
12 words
The method of claim 1 in which said semiconductor substrate comprises silicon.
Claim 9
Dependent Claim
14 words
The method of claim 1 in which said surrounding insulative material comprises silicon oxide.
Claim 10
Dependent Claim
14 words
The method of claim 1 in which said doping is performed by ion implantation.
Claim 11
Dependent Claim
14 words
The method of claim 1 in which said first mask layer comprises silicon nitride.
Claim 12
Dependent Claim
27 words
The method of claim 10 in which said second mask layer comprises material selected from the group consisting of polycrystalline silicon, molybdenum, tungsten, silicon oxide, and silicides.
Claim 13
Dependent Claim
16 words
The method of claim 1 in which said first mask layer is removed by selective etching.
Claim 14
Dependent Claim
27 words
The method of claim 1 in which said second mask layer comprises metal and said gate oxide is formed in an atmosphere of hydrogen and water vapor.
Claim 15
Dependent Claim
25 words
The method of claim 1 in which said second mask layer comprises a silicide and is oxidized in the formation of said gate insulative layer.
Claim 16
Dependent Claim
12 words
The method of claim 1 in which said gate insultation is deposited.
Claim 17
Dependent Claim
14 words
The method of claim 1 in which said gate insulation comprises a thermal nitride.
Claim 18
Dependent Claim
25 words
The method of claim 1 in which second mask layer comprises metal and is patterned to provide electrical contacts to said source and drain regions.
Claim 19
Dependent Claim
11 words
The method of claim 17 in which said patterning is non-critical.
Claim 20
Dependent Claim
33 words
The method of claim 1 further including a step of redepositing spacer oxide material over said substrate, whereby a dielectric layer is formed for insultative pruposes and for deposition of subsequent metallization layers.
Claim 21
Dependent Claim
27 words
The method of claim 1 further including a step of redepositing spacer oxide material and planarizing same at least to the level of said second mask layer.
Claim 22
Dependent Claim
16 words
The method of claim 20 further including a step of selectively removing said scond mask layer.
Claim 23
Dependent Claim
25 words
The method of claim 21 further including a step of disposing contact metal in the region occupied by said finally removed second mask layer material.
Claim 24
Dependent Claim
14 words
The method of claim 22 further including a step of planarizing said contact material.
Claim 25
Dependent Claim
31 words
The method of claim 1 in which said second mask layer comprises material selected from the group consisting of polycrystalline silicon, silicon oxide, molybdenum, tungsten silicide, molybdenum silicide and titanium silicide.
Claim 26
Dependent Claim
28 words
The method of claim 1 in which said first mask layer comprises material selected from the group consisting of molybdenum, tungsten, aluminum, polysilicon, silicon oxide and silicon nitride.
Claim 27
Dependent Claim
26 words
The method of claim 1 in which said gate electrode material is selected from the group consisting of polycrystalline silicon, silicon, molybdenum, tungsten, and metal silicides.
Claim 28
Independent Claim
196 words
A method of fabricating field effect transitors, said method comprising the steps of: forming an active region in a semiconductor substrate, said active region being surrounded by insulative material; forming a first ion implantation mask layer in said active region, said first mask layer being disposed in substantially the pattern desired for a gate electrode for said field effect transistor; forming doped regions in said active region on either side of said first mask layer so as to form source and drain regions in said semiconductor substrate; depositing a second ion implantation mask layer over said substrate and planarizing said second mask layer at least down to the level of said first mask layer, said first and secon mask layers comprising distinct material; removing said first mask layer; forming oxide spacers on the sidewalls of said second mask layer in said active region; forming a gate insultative layer on said substrate between said sidewall spacers; depositing conductive gate electrode material over said insultative gate material and between said sidewall spacers, whereby a gate electrode for said field effect transistor is formed; planarizing said gate electrode material at least to the level of said second mask layer.
Claim 29
Independent Claim
196 words
A method of fabricating field effect transitors, said method comprising the steps of: forming an active region in a semiconductor substrate, said active region being surrounded by insulative material; forming a first ion implantation mask layer in said active region, said first mask layer being disposed in substantially the pattern desired for a gate electrode for said field effect transistor; forming doped regions in said active region on either side of said first mask layer so as to form source and drain regions in said semiconductor substrate; depositing a second ion implantation mask layer over said substrate and planarizing said second mask layer at least down to the level of said first mask layer, said first and secon mask layers comprising distinct material; removing said first mask layer; forming oxide spacers on the sidewalls of said second mask layer in said active region; forming a gate insultative layer on said substrate between said sidewall spacers; depositing conductive gate electrode material over said insultative gate material and between said sidewall spacers, whereby a gate electrode for said field effect transistor is formed; planarizing said gate electrode material at least to the level of said second mask layer.
Claim 30
Independent Claim
179 words
A method of fabricating field effect transistors, said method comprising the step of: forming an active region in a semiconductor substrate, said active region being surrounded by insulative material; forming a first ion implantation mask layer in said active region, said first mask layer being disposed in substantially the pattern desired for a gate electrode for said field effect transistor; forming doped regions in said active region on either side of said first mask layer so as to form source and drain regions in said semiconductor substrate; depositing a second ion implantation mask layer over said substrate and planarizing said second mask layer at least down to the level of said first mask layer said first and second mask layers comprising distrinct material; removing said first mask layer; forming oxide spacers on the sidewalls of said second mask layer in said active region; depositing conductive gate electrode material between said sidewall spacers, whereby a gate electrode for said field effect transistor is formed; and planarizing said gate electrode material at least to the level of said second mask layer.
Claim 31
Independent Claim
179 words
A method of fabricating field effect transistors, said method comprising the step of: forming an active region in a semiconductor substrate, said active region being surrounded by insulative material; forming a first ion implantation mask layer in said active region, said first mask layer being disposed in substantially the pattern desired for a gate electrode for said field effect transistor; forming doped regions in said active region on either side of said first mask layer so as to form source and drain regions in said semiconductor substrate; depositing a second ion implantation mask layer over said substrate and planarizing said second mask layer at least down to the level of said first mask layer said first and second mask layers comprising distrinct material; removing said first mask layer; forming oxide spacers on the sidewalls of said second mask layer in said active region; depositing conductive gate electrode material between said sidewall spacers, whereby a gate electrode for said field effect transistor is formed; and planarizing said gate electrode material at least to the level of said second mask layer.
Claim 32
Dependent Claim
24 words
The method of claim 28 further including, after forming said oxide spacers, forming a gate insultative layer on said substrate between said sidewall spacers.
Claim 33
Dependent Claim
34 words
The method of claim 29 further including, after said planarizing step. selectively removing said sidewall spacer material and forming less heavily doped regions on either side of said gate electrode in said semiconductor substrate.
Claim 34
Independent Claim
52 words
A method of fabricating field effect transistors in which formation of a gate structure for said transistor is produced by self alignment of said gate structure with respect to previously formed source and drain contact material or to previously formed material for which said source and drain contact material is subsequently substituted.
Claim 35
Independent Claim
52 words
A method of fabricating field effect transistors in which formation of a gate structure for said transistor is produced by self alignment of said gate structure with respect to previously formed source and drain contact material or to previously formed material for which said source and drain contact material is subsequently substituted.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-07-06 | 1991-01-05 | 1991-07-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-07-06 | 1995-01-05 | 1995-07-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-07-06 | 1999-01-05 | 1999-07-07 | $7700.00 | Window Closed / Lapsed |