Method of fabricating image sensor dies for use in assembling arrays

Claim 1

A method of fabricating high resolution image sensor dies from a wafer so that said dies have precision faces to enable said dies to be assembled with other like dies to form a larger array without image loss or distortion at the points where said dies are assembled together, comprising the steps of: (a) etching small V-shaped grooves in one side of a <100> silicon wafer delineating the faces of the dies where the dies are to be separated from said wafer, the walls of said V-shaped grooves paralleling the <111> crystalline plane of said wafer; (b) forming grooves in the opposite side of the wafer opposite each of said V-shaped grooves, the axis of said grooves being parallel to the axis of the V-shaped groove opposite thereto; and (c) sawing said wafer along said V-shaped grooves with one side of the cut made by sawing being substantially coextensive with the bottom of said V-shaped grooves whereby one side of said V-shaped grooves is at least partially obliterated by said sawing, the sides of said V-shaped grooves tha remain serving to prevent development of fractures in said die beyond said remaining side as said wafer is being sawed.

Claim 2

A method of fabricating high resolution image sensor dies from a wafer so that said dies have precision faces to enable said dies to be assembled with other like dies to form a larger array without image loss or distortion at the points where said dies are assembled together, comprising the steps of: (a) etching small V-shaped grooves in one side of a <100> silicon wafer delineating the faces of the dies where the dies are to be separated from said wafer, the walls of said V-shaped grooves paralleling the <111> crystalline plane of said wafer; (b) forming grooves in the opposite side of the wafer opposite each of said V-shaped grooves, the axis of said grooves being parallel to the axis of the V-shaped groove opposite thereto; and (c) sawing said wafer along said V-shaped grooves with one side of the cut made by sawing being substantially coextensive with the bottom of said V-shaped grooves whereby one side of said V-shaped grooves is at least partially obliterated by said sawing, the sides of said V-shaped grooves tha remain serving to prevent development of fractures in said die beyond said remaining side as said wafer is being sawed.

Claim 3

A method of separating semiconductor image sensor dies from a larger wafer to provide dies with precision ends which enable the dies to be joined against one another end to end to form longer arrays without image loss or distortion at the points where the dies are joined, comprising the steps of: (a) forming first V-shaped grooves on the surface of said wafer where said dies are to be separated from said wafer, said first V-shaped grooves having a width of substantially 5 to 20 μm; (b) forming second grooves on the surface of said wafer opposite each of said first grooves, said second grooves being deeper than said firt grooves and less than the thickness of said wafer, said second grooves being wider than said first grooves to facilitate separating individual dies from said wafer; and (c) making a relatively wide cut through said wafer along said first V-shaped grooves with one edge of said cuts being substantially aligned with the bottom of said first V-shaped grooves whereby one side of said first V-shaped grooves is removed by said cut while the remaining side of said V-shaped grooves remains substantially intact, said cut separating said individual dies from said wafer with the ends of said dies being smooth and undistorted, the remaining side of said V-grooves inhibiting fracturing of said wafer as said wafer is cut.

Claim 4

A method of separating semiconductor image sensor dies from a larger wafer to provide dies with precision ends which enable the dies to be joined against one another end to end to form longer arrays without image loss or distortion at the points where the dies are joined, comprising the steps of: (a) forming first V-shaped grooves on the surface of said wafer where said dies are to be separated from said wafer, said first V-shaped grooves having a width of substantially 5 to 20 μm; (b) forming second grooves on the surface of said wafer opposite each of said first grooves, said second grooves being deeper than said firt grooves and less than the thickness of said wafer, said second grooves being wider than said first grooves to facilitate separating individual dies from said wafer; and (c) making a relatively wide cut through said wafer along said first V-shaped grooves with one edge of said cuts being substantially aligned with the bottom of said first V-shaped grooves whereby one side of said first V-shaped grooves is removed by said cut while the remaining side of said V-shaped grooves remains substantially intact, said cut separating said individual dies from said wafer with the ends of said dies being smooth and undistorted, the remaining side of said V-grooves inhibiting fracturing of said wafer as said wafer is cut.

Claim 5

A method for producing photosensitive scanning dies having precisely controlled ends enabling one of the dies to be assembled against another of the dies to form a longer composite array without distortion or damage to the image scanning properties of the dies, the dies being cut from a larger <100> silicon wafer, comprising the steps of: (a) etching relatively small first grooves in one side of said wafer defining said die ends, the walls of said first grooves paralleling the <111> crystalline plane of said wafer; (b) forming a relatively wide second groove in the opposite side of said wafer in association with each of said first grooves, the axis of each of said second grooves being parallel to the axis of said first groove associated therewith; and (c) cutting said dies from said wafer by sawing through said wafer at each of said first grooves with one edge of the cut made by sawing substantially aligned with the bottom of said first grooves, the remaining uncut side of said first groove entrapping fractures and chipping resulting from sawing whereby to provide dies with uniform precise ends and without damage to active elements on said dies proximate said die ends.

Claim 6

A method for producing photosensitive scanning dies having precisely controlled ends enabling one of the dies to be assembled against another of the dies to form a longer composite array without distortion or damage to the image scanning properties of the dies, the dies being cut from a larger <100> silicon wafer, comprising the steps of: (a) etching relatively small first grooves in one side of said wafer defining said die ends, the walls of said first grooves paralleling the <111> crystalline plane of said wafer; (b) forming a relatively wide second groove in the opposite side of said wafer in association with each of said first grooves, the axis of each of said second grooves being parallel to the axis of said first groove associated therewith; and (c) cutting said dies from said wafer by sawing through said wafer at each of said first grooves with one edge of the cut made by sawing substantially aligned with the bottom of said first grooves, the remaining uncut side of said first groove entrapping fractures and chipping resulting from sawing whereby to provide dies with uniform precise ends and without damage to active elements on said dies proximate said die ends.

Claim 7

A method for producing photosensitive scanning dies having precisely controlled ends enabling one of the die to be assembled against another of the dies to form a longer composite array without distortion or damage to the image scanning properties of the dies, the dies being cut from a larger <100> silicon wafer, comprising the steps of: (a) etching relatively small first grooves in one side of said wafer defining said die ends, the walls of said first grooves paralleling the <111> crystalline plane of said wafer; (b) forming second grooves in the opposite side of said wafer in association with each of said V-shaped grooves, the axis of each of said second grooves being parallel to the axis of said V-shaped groove associated therewith; (c) cutting said dies from said wafer by sawing through said wafer at each of said V-shaped grooves, the width of the cut made by sawing being substantially wider than the width of said V-shaped grooves; (d) locating said cut so that one edge of said cut is substantially aligned with the bottom of said V-shaped grooves whereby said cut removes one side of said V-shaped grooves while the remaining side of said V-shaped grooves is substantially preserved, said remaining side of said V-shaped grooves inhibiting fracturing and chipping resulting from said sawing whereby there is provided dies with uniform precise ends and without damage to active elements on said dies proximate said die ends.

Claim 8

A method for producing photosensitive scanning dies having precisely controlled ends enabling one of the die to be assembled against another of the dies to form a longer composite array without distortion or damage to the image scanning properties of the dies, the dies being cut from a larger <100> silicon wafer, comprising the steps of: (a) etching relatively small first grooves in one side of said wafer defining said die ends, the walls of said first grooves paralleling the <111> crystalline plane of said wafer; (b) forming second grooves in the opposite side of said wafer in association with each of said V-shaped grooves, the axis of each of said second grooves being parallel to the axis of said V-shaped groove associated therewith; (c) cutting said dies from said wafer by sawing through said wafer at each of said V-shaped grooves, the width of the cut made by sawing being substantially wider than the width of said V-shaped grooves; (d) locating said cut so that one edge of said cut is substantially aligned with the bottom of said V-shaped grooves whereby said cut removes one side of said V-shaped grooves while the remaining side of said V-shaped grooves is substantially preserved, said remaining side of said V-shaped grooves inhibiting fracturing and chipping resulting from said sawing whereby there is provided dies with uniform precise ends and without damage to active elements on said dies proximate said die ends.

Claim 9

A method for producing a scanning die having precisely controlled ends enabling said die to be assembled with other like dies to form a longer composite array without distortion or damage to the image scanning properties of the dies, said dies being cut from a larger <100> silicon wafer, comprising the steps of: (a) etching a small V-shaped groove in one side of said wafer where said die is to be cut from said wafer, the walls of said V-shaped groove paralleling the <111> crystalline plane of said wafer; (b) forming a second groove in the opposite side of said wafer substantially opposite said V-shaped groove, the axis of said second groove being parallel to the axis of said V-shaped groove; (c) cutting said die from said wafer by cutting through said wafer at said V-shaped groove, the width of the cut made by cutting being substantially wider than the width of said V-shaped groove; and (d) locating said cut so that one edge of said cut is substantially aligned with the bottom of said V-shaped groove whereby said cut removes the side of said V-shaped groove opposite said die while substantially preserving the other side of said V-shaped groove intact, said other side of said V-shaped groove inhibiting fracturing and chipping resulting from cutting whereby there is provided a die having a uniform precise end without damaging active elements on said die proximate said end.

Claim 10

A method for producing a scanning die having precisely controlled ends enabling said die to be assembled with other like dies to form a longer composite array without distortion or damage to the image scanning properties of the dies, said dies being cut from a larger <100> silicon wafer, comprising the steps of: (a) etching a small V-shaped groove in one side of said wafer where said die is to be cut from said wafer, the walls of said V-shaped groove paralleling the <111> crystalline plane of said wafer; (b) forming a second groove in the opposite side of said wafer substantially opposite said V-shaped groove, the axis of said second groove being parallel to the axis of said V-shaped groove; (c) cutting said die from said wafer by cutting through said wafer at said V-shaped groove, the width of the cut made by cutting being substantially wider than the width of said V-shaped groove; and (d) locating said cut so that one edge of said cut is substantially aligned with the bottom of said V-shaped groove whereby said cut removes the side of said V-shaped groove opposite said die while substantially preserving the other side of said V-shaped groove intact, said other side of said V-shaped groove inhibiting fracturing and chipping resulting from cutting whereby there is provided a die having a uniform precise end without damaging active elements on said die proximate said end.

Claim 12

A method of separating semiconductor image sensor dies from a larger wafer to provide dies with precision ends which enable the dies to be joined against one another end to end to form longer composite array without image loss or distortion at the points where the dies are joined, comprising the steps of: (a) non-mechanically forming V-shaped grooves on the surface of said wafer where said dies are to be separated from said wafer, said V-shaped grooves having a width and a height; (b) mechanically forming second grooves on the surface of said wafer opposite each of said V-shaped grooves to facilitate separating individual dies from said wafer, said second grooves being deeper than said V-shaped grooves, said second grooves being wider han said V-shaped grooves; and (c) mechanically cutting through said wafer along said V-shaped grooves with one edge of the cut being substantially aligned with the bottom of said V-shaped grooves, the width of said cut being greater than the width of said V-shaped grooves whereby one side of said V-shaped grooves is removed by said cut while the remaining side of said V-shaped grooves remains substantially intact, said cut separating said individual dies from said wafer with the ends of said dies being smooth and undistorted, said remaining side of said V-grooves inhibiting fracturing of said wafer as said wafer is cut.

Claim 13

A method of separating semiconductor image sensor dies from a larger wafer to provide dies with precision ends which enable the dies to be joined against one another end to end to form longer composite array without image loss or distortion at the points where the dies are joined, comprising the steps of: (a) non-mechanically forming V-shaped grooves on the surface of said wafer where said dies are to be separated from said wafer, said V-shaped grooves having a width and a height; (b) mechanically forming second grooves on the surface of said wafer opposite each of said V-shaped grooves to facilitate separating individual dies from said wafer, said second grooves being deeper than said V-shaped grooves, said second grooves being wider han said V-shaped grooves; and (c) mechanically cutting through said wafer along said V-shaped grooves with one edge of the cut being substantially aligned with the bottom of said V-shaped grooves, the width of said cut being greater than the width of said V-shaped grooves whereby one side of said V-shaped grooves is removed by said cut while the remaining side of said V-shaped grooves remains substantially intact, said cut separating said individual dies from said wafer with the ends of said dies being smooth and undistorted, said remaining side of said V-grooves inhibiting fracturing of said wafer as said wafer is cut.

Claim 17

A method of fabricating high resolution image sensor dies from a wafer so that said dies have precision faces to enable said dies to be assembled with other like dies to form a larger array without image loss or distortion at the points where said dies are assembled together, comprising the steps of: (a) etching small V-shaped grooves in one side of a <100> silicon wafer delineating the faces of the dies where the dies are to be separated from said wafer, the walls of said V-shaped grooves paralleling the <111> crystalline plane of said wafer; (b) forming lines substantially perpendicular to the axis of said V-shaped grooves; (c) cutting said wafer along said V-shaped grooves with one side of the cut being substantially coextensive with the bottom of said V-shaped grooves whereby one side of said V-shaped grooves is at least partially obliterated by said cutting, the sides of said V-shaped grooves that remain serving to prevent development of fractures in said die as said wafer is being cut; and (d) cutting along said lines to complete separating of said dies from said wafer.

Claim 18

A method of fabricating high resolution image sensor dies from a wafer so that said dies have precision faces to enable said dies to be assembled with other like dies to form a larger array without image loss or distortion at the points where said dies are assembled together, comprising the steps of: (a) etching small V-shaped grooves in one side of a <100> silicon wafer delineating the faces of the dies where the dies are to be separated from said wafer, the walls of said V-shaped grooves paralleling the <111> crystalline plane of said wafer; (b) forming lines substantially perpendicular to the axis of said V-shaped grooves; (c) cutting said wafer along said V-shaped grooves with one side of the cut being substantially coextensive with the bottom of said V-shaped grooves whereby one side of said V-shaped grooves is at least partially obliterated by said cutting, the sides of said V-shaped grooves that remain serving to prevent development of fractures in said die as said wafer is being cut; and (d) cutting along said lines to complete separating of said dies from said wafer.

Claim 20

A method of fabricating high resolution image sensor dies having active and inactive sides from a wafer so that said dies have precision faces to enable said dies to be assembled with other like dies to form a larger array without image loss or distortion at the points where said dies are assembled together, comprising the steps of: (a) forming relatively wide grooves in said inactive side of said wafer in the area where said dies are to be separated from said wafer; (b) etching relatively small V-shaped grooves in said active side of said wafer opposite to and parallel with each of said wide grooves; and (c) sawing along said V-shaped grooves through said wafer to said wide grooves whereby to separate said dies from said wafer, one side of the cut made by sawing being substantially coextensive with the bottom of said V-shaped grooves whereby one side of said V-shaped grooves is at least partially obliterated by said sawing, the sides of said V-shaped grooves that remain serving to prevent development of fractures in said die beyond said remaining side as said wafer is being sawed.

Claim 21

A method of fabricating high resolution image sensor dies having active and inactive sides from a wafer so that said dies have precision faces to enable said dies to be assembled with other like dies to form a larger array without image loss or distortion at the points where said dies are assembled together, comprising the steps of: (a) forming relatively wide grooves in said inactive side of said wafer in the area where said dies are to be separated from said wafer; (b) etching relatively small V-shaped grooves in said active side of said wafer opposite to and parallel with each of said wide grooves; and (c) sawing along said V-shaped grooves through said wafer to said wide grooves whereby to separate said dies from said wafer, one side of the cut made by sawing being substantially coextensive with the bottom of said V-shaped grooves whereby one side of said V-shaped grooves is at least partially obliterated by said sawing, the sides of said V-shaped grooves that remain serving to prevent development of fractures in said die beyond said remaining side as said wafer is being sawed.