Method of fabricating image sensor arrays

Claim 1

A method of fabricating a high resolution sensor array or chip capable of being abutted against other like arrays to form a longer array without image loss or distortion at the array junctions, comprising the steps of: (a) etching a small V-shaped groove in one side of a (100) silicon wafer defining the chip end, the walls of the V-shaped groove paralleling the (111) crystalline plane of the wafer; (b) forming a relatively wide groove in the opposite side of the wafer, the axis of the said wide groove being parallel to and offset from the axis of the V-shaped groove by an amount such that the (111) crystalline plane in which one wall of the V-shaped groove lies intercepts said wide groove at substantially the midpoint of said groove; (c) applying a downward bending force to the wafer proximate the V-shaped groove along the (111) plane so that the wafer fractures and pivots about the bottom of said wide groove with the fracture extending from the bottom of the V-shaped groove to said wide groove whereby to provide a uniformly flat precisely controlled end for the chip; and (d) forming the opposite end of the chip in the same manner to provide an array having uniformly flat precisely controlled ends for butting with like ends of other arrays to form a longer array.

Claim 2

A method of fabricating a high resolution sensor array or chip capable of being abutted against other like arrays to form a longer array without image loss or distortion at the array junctions, comprising the steps of: (a) etching a small V-shaped groove in one side of a (100) silicon wafer defining the chip end, the walls of the V-shaped groove paralleling the (111) crystalline plane of the wafer; (b) forming a relatively wide groove in the opposite side of the wafer, the axis of the said wide groove being parallel to and offset from the axis of the V-shaped groove by an amount such that the (111) crystalline plane in which one wall of the V-shaped groove lies intercepts said wide groove at substantially the midpoint of said groove; (c) applying a downward bending force to the wafer proximate the V-shaped groove along the (111) plane so that the wafer fractures and pivots about the bottom of said wide groove with the fracture extending from the bottom of the V-shaped groove to said wide groove whereby to provide a uniformly flat precisely controlled end for the chip; and (d) forming the opposite end of the chip in the same manner to provide an array having uniformly flat precisely controlled ends for butting with like ends of other arrays to form a longer array.

Claim 3

A method for producing scanning arrays having precisely controlled ends enabling one of the arrays to be butted against another of the arrays to form a longer composite array without distortion or damage to the image scanning properties of the arrays, the arrays being formed on individual chips cleaved from a larger (100) silicon wafer, comprising the steps of: (a) etching a small V-shaped groove in one side of said wafer defining said chip ends, the walls of the V-shaped groove paralleling the (111) crystalline plane of said wafer; (b) cutting a relatively wide groove in the opposite side of said wafer in association with each of said V-shaped grooves, the axis of each of said cut grooves being parallel to and offset from the axis of said V-shaped groove associated therewith by an amount such that the (111) crystalline plane in which one wall of said V-shaped groove lies intercepts said cut groove substantially at the midpoint of said cut groove; and (c) applying a downward bending force to cause said wafer to pivot about the bottom of said cut groove and fracture said wafer along said (111) plane with said fracture extending from the bottom of said V-shaped groove to said cut groove whereby to provide a uniformly flat precisely controlled end for said array.

Claim 4

A method for producing scanning arrays having precisely controlled ends enabling one of the arrays to be butted against another of the arrays to form a longer composite array without distortion or damage to the image scanning properties of the arrays, the arrays being formed on individual chips cleaved from a larger (100) silicon wafer, comprising the steps of: (a) etching a small V-shaped groove in one side of said wafer defining said chip ends, the walls of the V-shaped groove paralleling the (111) crystalline plane of said wafer; (b) cutting a relatively wide groove in the opposite side of said wafer in association with each of said V-shaped grooves, the axis of each of said cut grooves being parallel to and offset from the axis of said V-shaped groove associated therewith by an amount such that the (111) crystalline plane in which one wall of said V-shaped groove lies intercepts said cut groove substantially at the midpoint of said cut groove; and (c) applying a downward bending force to cause said wafer to pivot about the bottom of said cut groove and fracture said wafer along said (111) plane with said fracture extending from the bottom of said V-shaped groove to said cut groove whereby to provide a uniformly flat precisely controlled end for said array.