Compound semiconductor device

Abstract

Abstract PURPOSE:To improve the appearance yield and reliability of a compound semiconductor device by protecting the periphery of the element region of the semiconductor device with annular metal and preventing a crystal failure occurred upon scribing from reaching the element region. CONSTITUTION:An n-type GaAs semiconductor layer 7 is formed on a GaAs semi- insulating substrate 13, source and drain electrodes 8 and 9 are formed in ohmic contact on the layer 7, and a gate electrode 10 is further formed in Schottky contact thereon. After an element protective metal layer 11 is then so formed as to surround the layer 7, a scribed groove 14 is formed thereon, and a bending force is applied to the substrate 13 to break and isolate respective element pieces along the scribed groove 14. Thus, it can eliminate the crystal failure at the scribing time to affect the operating layers so as to improve the appearance yield and the reliability of the semiconductor device.

Inventors

• 👤 Kunio Takatsuki

Bibliographic Details