US3628107A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Passivated semiconductor device with peripheral protective junction
Assignee: General Electric Co
•
Filing: 1969-05-05
•
Granted: 1971-12-14
•
Expires: 1989-05-05
Abstract
Abstract A semiconductive crystal having a central zone of relatively high resistivity is provided with glassed grooves adjacent its opposite major surfaces spaced inwardly from its edge. A peripheral zone forms a junction with the central zone spacing it inwardly from the outer edge of the crystal. A rectifying junction lies inwardly of the grooves adjacent the central zone. Both the peripheral and rectifying junctions are passivated by edge intersection with the glassed grooves.
Inventors
- 👤 Richard W Kennedy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:57
CPC Classifications
H; H10; H10D; H10D18/00; H10D18/80; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/104; H10D62/117; H10P; H10P54/00; H10W; H10W40/00; H10W40/10; H10W74/00; H10W74/10; H10W74/131; H10W74/134; H10W90/00; H10W90/701; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
223 words
The combination comprising a semiconductive crystalline wafer having first and second major surfaces with a plurality of laterally spaced annular first grooves associated with said first major surface and a plurality of laterally spaced annular second grooves associated with said second major surface, each of the first grooves being paired with one of the second grooves, the grooves laterally defining therebetween a plurality of intersecting integral corridors, said semiconductive crystalline wafer being comprised of a plurality of laterally spaced central zones lying between and spaced from said major surfaces, a peripheral zone extending between said major surfaces along said corridors and forming annular junctions peripherally of each of said central zones, said annular junctions intersecting the grooves, a plurality of first and second zones each located laterally interiorly of the annular grooves and lying between said central zones and said first and second major surfaces, respectively, being of a conductivity type opposite from that of said central zone, and said central zones each forming first and second junctions with said first and second zones, respectively, adjacent thereto, said first junctions peripherally intersecting the first grooves and said second junctions peripherally intersecting the second grooves, dielectric passivant means overlying the intersections of said junctions with the grooves, first contact means associated with said first zones, and second contact means associated with said second zones.
Claim 2
Dependent Claim
31 words
The combination according to claim 2 in which said first contact means is an integral contact which additionally overlies said corridors and said dielectric passivant means associated with the first grooves.
Claim 3
Dependent Claim
226 words
The combinatiOn comprising a semiconductive crystalline wafer having first and second major surfaces with a plurality of laterally spaced annular grooves associated with said first major surface, the grooves laterally defining therebetween a plurality of intersecting integral corridors, said semiconductive crystalline wafer being comprised of a plurality of laterally spaced central zones of a first conductivity type spaced from said first major surface, a peripheral zone of an opposite conductivity type from that of said central zone extending between said major surfaces along said corridors and forming annular junctions peripherally of each of said central zones, each of said annular junctions intersecting one of the annular grooves, a plurality of first zones of an opposite conductivity type from that of said central zones located laterally interiorly of the annular grooves and lying between said central zones and said first major surface to form rectifying junctions therewith, and said rectifying junctions lying interiorly of and peripherally intersecting the annular grooves, the distance between the groove intersections of said annular peripheral junctions and said rectifying junctions being greater than the thickness of the central zone measured in a direction normal to said first major surface, dielectric passivant means overlying the intersections of said junctions with the grooves, first contact means conductively associated with said first zone, and second contact means conductively associated with said entire second major surface.
Claim 4
Dependent Claim
16 words
The combination according to claim 4 in which said annular junctions intersect said second major surface.
Claim 5
Dependent Claim
39 words
The combination according to claim 4 additionally including a plurality of laterally spaced annular grooves associated with said second major surface, the second major surface associated grooves being concentric with and laterally offset from the first major surface grooves.
Claim 6
Dependent Claim
62 words
The combination according to claim 4 additionally including a plurality of laterally spaced annular grooves associated with said second major surface and a plurality of laterally spaced second zones adjacent said second major surface lying interiorly of and peripherally intersecting the second major surface associated grooves, said second zones being of like conductivity type as said central zones and of lower resistivity.
Claim 7
Dependent Claim
255 words
The combination comprising a semiconductive crystal having first and second major surfaces comprised of a central zone lying between and spaced from said major surfaces, first and second zones lying between said central zone and said first and second major surfaces, respectively, said first and second zones being of opposite conductivity type and of lower resistivity than said central zone, said central zone being of like conductivity type as said first zone and opposite conductivity type from said second zone so that said central zone forms a juncture with said first zone and rectifying junction with said second zone, first and second circumferential border grooves spaced inwardly from an outer edge of said crystal being associated with said first and second major surfaces, respectively, and extending inwardly to intersect said juncture and said junction, respectively, and a peripheral zone of a conductivity type opposite from that of said central zone extending from said first major surface to said second major surface to form an annular junction with said central zone and separated by the grooves from said first and second zones, said annular junction at its intersection with the first and second grooves being spaced from said first and second zones, respectively, by a distance greater than the thickness of said central zone measured in a direction normal to said first major surface, dielectric passivant means overlying the intersections of said junctions and said juncture with the grooves, first contact means associated with said first zone, and second contacT means associated with said second zone.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-12-13 | 1975-06-14 | 1975-12-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-12-13 | 1979-06-14 | 1979-12-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-12-13 | 1983-06-14 | 1983-12-14 | $7700.00 | Window Closed / Lapsed |