Semiconductor a.c. switch device

Claim 1

A SEMICONDUCTOR SWITCH DEVICE CAPABLE OF PERFORMING A.C. SWITCHING COMPRISING: A UNITARY BODY OF SEMICONDUCTIVE MATERIAL INCLUDING A SUBSTRATE OF A FIRST TYPE OF SEMICONDUCTIVITY HAVING OPPOSING MAJOR SURFACES AND COMPRISING A FIRST REGION OF SAID DEVICE; SECOND AND THIRD SEPARATE REGIONS OF A SECOND TYPE OF SEMICONDUCTIVITY IN P-N JUNCTION FORMING RELATION WITH A FIRST MAJOR SURFACE OF SAID SUBSTRATE; FOURTH AND FIFTH SEPARATE REGIONS OF SAID SECOND TYPE OF SEMICONDUCTIVITY IN P-N JUNCTION FORMING RELATION WITH A SECOND MAJOR SURFACE OF SAID SUBSTRATE SAID FOURTH REGION BEING DIRECTLY OPPOSITE SAID SECOND REGION AND SAID FIFTH REGION BEING DIRECTLY OPPOSITE SAID THIRD REGION; A SIXTH REGION OF MATERIAL OF SAID FIRST TYPE OF SEMICONDUCTIVITY IN P-N JUNCTION FORMING RELATION WITH SAID SECOND REGION AND A SEVENTH REGION OF SAID FIRST TYPE OF SEMICONDUCTIVITY IN P-N- JUNCTION FORMING RELATION WITH SAID FIFTH REGION TO PROVIDE TWO FOUR LAYER DEVICE PORTIONS INCLUDING SAID SIXTH, SECOND, FIRST AND FOURTH REGIONS IN ONE PORTION AND SAID THIRD, FIRST, FIFTH, AND SEVENTH REGIONS IN THE OTHER DEVICE PORTION; A SEPARATE OHMIC CONTACT ON EACH OF SAID SECOND, THIRD, FOURTH, FIFTH, SIXTH AND SEVENTH REGIONS; CONDUCTIVE INTERCONNECTION MEANS BETWEEN THE OHMIC CONTACTS ON SAID SIXTH AND THIRD REGIONS AND BETWEEN THE OHMIC CONTACTS ON SAID FOURTH AND SEVENTH REGIONS FOR APPLICATION OF AN A.C. POTENTIAL THEREACROSS TO BE SELECTIVELY SWITCHED BY APPLICATION OF CONTROL SIGNALS TO THE OHMIC CONTACTS ON SAID SECOND AND FIFTH REGIONS.