Semiconductor devices and methods of making same

Claim 1

A SEMICONDUCTOR DEVICE COMPRISING A BODY OF SEMICONDUCTOR MATERIAL INCLUDING A REGION OF ONE CONDUCTIVITY TYPE HAVING THEREIN A ZONE OF THE OPPOSITE CONDUCTIVITY TYPE OF FORM THEREWITH A FIRST P-N JUNCTION, AN ELECTRODE IN LOW RESISTANCE OHMIC CONTACT WITH SAID ZONE, MEANS FOR PROVIDING A LOW IMPEDANCE CONDUCTIVE PATH FROM SAID ONE ELECTRODE TO SAID REGION, A THIRD REION OF SAID OPPOSITE CONDUCTIVITY TYPE FORMING WITH SAID ONE P-N JUNCTION A SECOND P-N JUNCTION, SAID THIRD REGION FORMING A JUNCTION TRANSISTOR WITH SAID SECOND P-N JUNCTION ACTING AS THE COLLECTOR P-N JUNCTION THEREOF, A FOURTH REGION FORMING WITH SAID THIRD REGION AN INJECTING JUNCTION, SAID FOURTH, THIRD AND SAID ONE REGION FORMING A TRANSISTOR WITH SAID SECOND JUNCTION ACTING AS THE COLLECTOR P-N JUNCTION THEREOF, ANOTHER ELECTRODE SECURED TO SAID BODY IN CONDUCTIVE RELATION WITH SAID FOURTH REGION OF ONE CONDUCTIVITY TYPE, ANOTHER ZONE IN SAID BODY OF OPPOSITE CONDUCTIVITY TYPE, A THIRD ELECTRIDE CONNECTED TO SAID OTHER ZONE OF OPPOSITE CONDUCTIVITY TYPE, SAID OTHER ZONE WITH SAID SECOND AND THIRD REGIONS FORMING A TRANSISTOR WITH THE SECOND P-N JUNCTION BEING THE COLLECTOR P-N JUNCTION THEREOF.