Patent US2290454A successfully refreshed from Google Patents.
US4741928A
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Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces
Assignee: General Electric Co
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Filing: 1987-04-10
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Granted: 1988-05-03
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Expires: 2007-04-10
Abstract
Abstract A method and heating apparatus are provided for selectively depositing metal films, such as tungsten, on the metal and semi-conductor surfaces of a silicon wafer by chemical vapor deposition. The method and heating apparatus serve to isolate the depositing surface of silicon wafers from both infrared radiation and the nucleating species which are vaporized by hot surfaces within the reaction chamber by means of a barrier which reflects or absorbs infrared radiation and condenses vaporized nucleating species before a nucleate metal deposition sites on metal or semiconductor surfaces.
Inventors
- 👤 Ronald H. Wilson
- 👤 Robert W. Stoll
- 👤 Herbert R. Philipp
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:50
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/04; C23C16/44; C23C16/48; C23C16/481; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10P34/00; H10P34/40; H10P34/42
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
91 words
A method for effecting selective chemical vapor deposition of tungsten on metal and semiconductor surfaces of a substrate in a cold-wall reactor which comprises heating the depositing surface of the substrate to a temperature above about 200° C. by heat transfer to the non-depositing surface, contacting the depositing surface with gaseous reactants which react to form metallic tungsten and isolating the depositng surface from impinging infrared radiation and vaporized nucleating species by a barrier which filters or refelects infrared radiation maintained at a temperature below the temperature of the depositing surface.
Claim 2
Independent Claim
91 words
A method for effecting selective chemical vapor deposition of tungsten on metal and semiconductor surfaces of a substrate in a cold-wall reactor which comprises heating the depositing surface of the substrate to a temperature above about 200° C. by heat transfer to the non-depositing surface, contacting the depositing surface with gaseous reactants which react to form metallic tungsten and isolating the depositng surface from impinging infrared radiation and vaporized nucleating species by a barrier which filters or refelects infrared radiation maintained at a temperature below the temperature of the depositing surface.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein the barrier is constructed of a material which filters infrared radiation.
Claim 4
Dependent Claim
14 words
The method of claim 2 wherein the barrier is constructed of quartz or nickel.
Claim 5
Dependent Claim
32 words
The method of claim 2 wherein the barrier isolates the depositing surface from infrared radiation having an angle of incidence of from 0° to 45° from the plane of the depositing surface.
Claim 6
Dependent Claim
26 words
The method of claim 1 wherein the gaseous reactants are hydrogen and tungsten hexafluoride, the substrate is a silicon wafer having metal, semiconductor, and insulator surfaces.
Claim 7
Dependent Claim
45 words
The method of claim 1 wherein the depositing surface is isolated from impinging infrared radiation by an infrared filter or an infrared reflector and said surface is isolated from vaporized nucleating species by an absorber having a temperature below the temperature of the depositing surface.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-03 | 1991-11-02 | 1992-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-03 | 1995-11-02 | 1996-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-03 | 1999-11-02 | 2000-05-03 | $7700.00 | Window Closed / Lapsed |