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US4653428A Expired / Lapsed US ⏱️ 0.0 years remaining

Selective chemical vapor deposition apparatus

Assignee: General Electric Co
•
Filing: 1985-05-10
•
Granted: 1987-03-31
•
Expires: 2005-05-10
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Abstract

Abstract An apparatus is provided for selectively depositing metal films on metal and semiconductive surfaces of a substrate wherein the depositing surface of the substrate is isolated from undesired impinging radiation, such as infrared radiation.

Inventors

  • 👤 Ronald H. Wilson
  • 👤 Robert W. Stoll
  • 👤 Michael A. Calacone

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 22:43
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/04; C23C16/44; C23C16/48; C23C16/481; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10P34/00; H10P34/40; H10P34/42

Claims Analysis

Total Claims: 19
Claim 1
Independent Claim 93 words
A chemical vapor deposition apparatus for depositing materials on a substrate which comprises a cold-wall reaction chamber, a means for heating the substrate to a temperature above 100° C. and a means for transporting a gaseous reactant to the substrate surface, the improvement comprising: a means for substantially isolating the depositing surface of a substrate comprising metal surfaces, semiconductor surfaces, or both, from impinging infrared radiation which comprises a means disposed within said cold wall reaction chamber for substantially isolating said depositing surface from infrared radiation generated within said cold wall reaction chamber.
Claim 2
Dependent Claim 93 words
A chemical vapor deposition apparatus for depositing materials on a substrate which comprises a cold-wall reaction chamber, a means for heating the substrate to a temperature above 100° C. and a means for transporting a gaseous reactant to the substrate surface, the improvement comprising: a means for substantially isolating the depositing surface of a substrate comprising metal surfaces, semiconductor surfaces, or both, from impinging infrared radiation which comprises a means disposed within said cold wall reaction chamber for substantially isolating said depositing surface from infrared radiation generated within said cold wall reaction chamber.
Claim 3
Dependent Claim 24 words
An apparatus as in claim 1 wherein the means for heating the substrate above 100° C. is internal to said cold wall reaction chamber.
Claim 4
Dependent Claim 33 words
An apparatus as in claim 2 wherein the means for substantially isolating impinging infrared radiation from the depositing surface of said substrate is an infrared reflector disposed within the cold wall reaction chamber.
Claim 5
Dependent Claim 33 words
An apparatus as in claim 2 wherein the means for substantially isolating impinging infrared radiation from the depositing surface of the substrate is an infrared filter disposed within the cold wall reaction chamber.
Claim 6
Dependent Claim 13 words
An apparatus as in claim 4 wherein the infrared filter is a solid.
Claim 7
Dependent Claim 42 words
An apparatus as in claim 2 wherein the means for heating the substrate above 100° C. comprises a susceptor within the reaction chamber which transmits radiant energy to the non-depositing surface of the silicon wafer and a means for heating the susceptor.
Claim 8
Dependent Claim 43 words
An apparatus as in claim 6 wherein the means for isolating undesirable radiation from the depositing surface of the silicon wafer is an infrared absorbing surface coated on the inside surface of the reaction chamber which is cooled by a surrounding water jacket.
Claim 9
Dependent Claim 26 words
An apparatus as in claim 6 wherein the susceptor is opaque to radio frequencies and the means for heating the susceptor is a radio frequency generator.
Claim 10
Dependent Claim 38 words
An apparatus as in claim 1 adapted to deposit materials on a substrate consisting of a silicon wafer with an integrated circuit pattern having surfaces provided by materials selected from the group consisting of insulators, metals and semiconductors.
Claim 11
Dependent Claim 14 words
An apparatus as in claim 1 adapted to deposit a metal on a substrate.
Claim 12
Dependent Claim 20 words
An apparatus as in claim 10 adapted to deposit a metal selected from the group consisting of tungsten and molybdenum.
Claim 13
Dependent Claim 26 words
An apparatus as in claim 1 wherein the means for heating the substrate above 100° C. is a radiant energy source external to the reaction chamber.
Claim 14
Dependent Claim 60 words
An apparatus as in claim 1 wherein the means for substantially isolating the depositing surface of the substrate from infrared radiation comprises (1) a filter disposed outside of said cold wall reaction chamber and (2) a means disposed within said cold wall reaction chamber for substantially isolating the depositing surface from infrared radiation generated within said cold wall reaction chamber.
Claim 15
Dependent Claim 17 words
An apparatus as in claim 13 wherein the radiant energy source is one or more filament lamps.
Claim 16
Dependent Claim 13 words
An apparatus as in claim 13 wherein said filter is a water jacket.
Claim 17
Dependent Claim 22 words
An apparatus as in claim 15 wherein said filter is disposed within the wall of the reaction chamber where deposition takes place.
Claim 18
Dependent Claim 32 words
An apparatus as in claim 13 wherein a solid infrared filter disposed within the cold wall reaction chamber isolates the depositing surface from infrared radiation generated within the cold wall reaction chamber.
Claim 19
Dependent Claim 25 words
An apparatus as in claim 1 wherein the means for heating the substrate above 100° C. is a resistance heater positioned within the reaction chamber.

References Cited (Backward Citations)

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US3659552A Cited
US3627590A Cited
US4496609A Cited
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US4041278A Cited
US4258658A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-03-30 1990-09-29 1991-03-31 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-03-30 1994-09-29 1995-03-31 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-03-30 1998-09-29 1999-03-31 $7700.00 Window Closed / Lapsed

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