US4646427A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of electrically adjusting the zener knee of a lateral polysilicon zener diode
Assignee: Motorola Solutions Inc
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Filing: 1984-06-28
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Granted: 1987-03-03
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Expires: 2004-06-28
Abstract
Abstract In a method of electrically altering the characteristics of a semiconductor device, a lateral polysilicon zener diode's zener knee voltage may be shifted either to a higher or lower voltage. An electrical potential may be applied in the forward direction to shift the zener knee to a higher voltage level. An electrical potential may be applied in the reverse bias direction to shift the zener knee to a lower voltage. In the limit, the zener may be changed into a forward diode of reverse polarity with respect to the original zener. The electrical potential used should be of appropriate magnitude to melt the polysilicon without damage to the zener's terminals. This induces migration of the impurities causing a rediffusion of impurities thereby altering the characteristics of the diode. This method may be used to program a PROM by either converting the zener to a diode or not to program each binary bit. The device may also be used as an analog memory element by setting an entire word equal to a predetermined zener knee voltage.
Inventors
- 👤 James T. Doyle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:31
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; G; G11; G11C; G11C17/00; G11C17/08; G11C17/14; G11C17/16; H10D8/00; H10D8/20; H10D8/25; H10P; H10P95/00; H10P95/80; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/065; Y; Y10; Y10S; Y10S148/00; Y10S148/013; Y10S148/018; Y10S148/055; Y10S148/122; Y10S148/154; Y10S148/174; Y10S438/00; Y10S438/983
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
162 words
A method of electrically altering the characteristics of a semiconductor device, said semiconductor device including a P type region made of intrinsic material doped with P type impurities and an N type region made of N type material doped with N type impurities forming a P/N junction having a zener knee voltage associated therewith, said P type region being coupled to a first terminal and said N type region being coupled to a second terminal and wherein at least one of sid regions is made of polycrystalline material, said method comprising the step of: applying a forward bias electrical potential across said P/N junction, wherein said electrical potential is suitable for inducing a migration of P type impurities and N type impurities and altering the geometry and doping profile of said P/N junction, thereby causing said zener knee voltage to increase, and wherein said electrical potential is of a magnitude lower than that required to melt or otherwise significantly alter said termainls.
Claim 2
Independent Claim
162 words
A method of electrically altering the characteristics of a semiconductor device, said semiconductor device including a P type region made of intrinsic material doped with P type impurities and an N type region made of N type material doped with N type impurities forming a P/N junction having a zener knee voltage associated therewith, said P type region being coupled to a first terminal and said N type region being coupled to a second terminal and wherein at least one of sid regions is made of polycrystalline material, said method comprising the step of: applying a forward bias electrical potential across said P/N junction, wherein said electrical potential is suitable for inducing a migration of P type impurities and N type impurities and altering the geometry and doping profile of said P/N junction, thereby causing said zener knee voltage to increase, and wherein said electrical potential is of a magnitude lower than that required to melt or otherwise significantly alter said termainls.
Claim 3
Dependent Claim
32 words
The method of claim 1, further including the step of reversing the polarity of the electrical potential to induce movement of said zener knee in the opposite direction of the original movement.
Claim 4
Dependent Claim
23 words
The method of claim 1, wherein said step of applying an electrical potential includes the step of applying a positive voltage ramp signal.
Claim 5
Dependent Claim
21 words
The method of claim 1, wherein said step of applying an electrical potential includes the step of applying a current pulse.
Claim 6
Dependent Claim
25 words
The method of claim 4, further including the step of measuring the voltage drop across the junction following the step of applying a current pulse.
Claim 7
Dependent Claim
29 words
The method of claim 5, further including the step of applying another current pulse if a desired voltage drop across the junction is not measured in the measuring step.
Claim 8
Dependent Claim
27 words
The method of claim 6, further including the steps of repeating the steps of measuring and applying until the desired voltage drop across the junction is achieved.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-03-02 | 1990-09-01 | 1991-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-03-02 | 1994-09-01 | 1995-03-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-03-02 | 1998-09-01 | 1999-03-03 | $7700.00 | Window Closed / Lapsed |