Patent US4307179A successfully refreshed from Google Patents.
US4307179A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Planar metal interconnection system and process
Assignee: International Business Machines Corp
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Filing: 1980-07-03
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Granted: 1981-12-22
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Expires: 2000-07-03
Abstract
Abstract A process for forming a layer of a metallurgy interconnection system on a substrate. The process involves forming a first electrically insulative layer of an organic polymerized resin material on the substrate, forming a second thin layer on the first layer which is resistant to dry etching conditions which are effective to etch the first layer, depositing a photoresist layer on the second layer, exposing the photoresist to form an inverse pattern of a desired metallurgy pattern and developing the photoresist, reactive ion etching the resultant exposed areas of the first and second layers, depositing a blanket continuous conductive metal layer over the hills and valleys of the pattern resulting from reactive ion etching, applying a planarizing photoresist layer, etching the photoresist to expose high spots of the metal layer, and etching the metal high spots to a depth sufficient to expose the surface of the second layer.
Inventors
- 👤 Kenneth Chang
- 👤 George T. Chiu
- 👤 Anthony Hoeg, Jr.
- 👤 Linda H. Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 23:23
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/0035; H; H05; H05K; H05K3/00; H05K3/0011; H05K3/0017; H05K3/0041; H05K3/02; H05K3/06; H05K3/061; H05K3/064; H05K3/46; H05K3/4644; H05K3/465; H05K3/467; H05K2201/00; H05K2201/01; H05K2201/0137; H05K2201/0166; H05K2201/03; H05K2201/0332; H05K2201/0364; H05K2201/0376; H05K2201/09; H05K2201/09209; H05K2201/095; H05K2201/09563; H05K2203/00; H05K2203/05; H05K2203/0562; H05K2203/0588; H05K2203/07; H05K2203/0779; H05K2203/0786; H05K2203/09; H05K2203/095; H05K3/10; H05K3/107; H05K3/14; H05K3/146; H05K3/16
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
142 words
A process for forming an interconnection metallurgy system on a substrate comprising: forming a first layer of an organic polymerized resin material on the top surface of said substrate; forming a second overlying glass layer on the surface of said resin layer, depositing a resist layer over said second layer, exposing the resist to form the pattern of the desired metallurgy pattern and developing the resist; removing the resultant exposed areas of said first and said second layer by reactive ion etching, depositing over said substrate a blanket continuous conductive metal layer, said metal layer having a hill and valley configuration conforming to the topography on the surface of said substrate; applying a blanket layer of photoresist; etching said photoresist layer to expose high spots of said metal layer; and etching said metal high spots to remove metal above said second layer.
Claim 2
Dependent Claim
142 words
A process for forming an interconnection metallurgy system on a substrate comprising: forming a first layer of an organic polymerized resin material on the top surface of said substrate; forming a second overlying glass layer on the surface of said resin layer, depositing a resist layer over said second layer, exposing the resist to form the pattern of the desired metallurgy pattern and developing the resist; removing the resultant exposed areas of said first and said second layer by reactive ion etching, depositing over said substrate a blanket continuous conductive metal layer, said metal layer having a hill and valley configuration conforming to the topography on the surface of said substrate; applying a blanket layer of photoresist; etching said photoresist layer to expose high spots of said metal layer; and etching said metal high spots to remove metal above said second layer.
Claim 3
Dependent Claim
27 words
A process in accordance with claim 1 wherein said conductive metal layer has a thickness at least equal to that of said first and said second layer.
Claim 4
Dependent Claim
36 words
A process in accordance with claim 1 wherein said metal layer has a thickness of at least from about 5 to about 25 percent in excess of the thickness of said first and said second layer.
Claim 5
Dependent Claim
45 words
A method in accordance with claim 1 or claim 2 wherein said photoresist layer which is applied to the surface of said metal layer is etched to a level of from about 0.1 to about 0.4 microns beneath the surface of said metal high spots.
Claim 6
Dependent Claim
30 words
A method in accordance with claim 1 wherein said etching of said metal high spots is stopped while metal remains in contact with the leading edge of said second layer.
Claim 7
Dependent Claim
66 words
A method in accordance with claim 1, 2, 4 or 5 wherein exposed areas of said first and said second layers are removed by a reactive ion etching step including a first reactive ion etching in an ambient comprising CF 4 and a second reactive ion etching step in an ambient comprising O 2 so as to provide a vertical trench pattern in said first layer.
Claim 8
Dependent Claim
53 words
A method in accordance with claim 1, 2, 4 or 5 wherein said blanket layer of photoresist is applied by a process wherein a first layer of photoresist is applied through a mask into the valleys of said metal layer and a second blanket layer of photoresist is applied in a planar configuration.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-12-21 | 1985-06-22 | 1985-12-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-12-21 | 1989-06-22 | 1989-12-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-12-21 | 1993-06-22 | 1993-12-22 | $7700.00 | Window Closed / Lapsed |