Abstract 1. A METHOD OF PRODUCING A MULTILAYER WIRING STRUCTURE FOR AN INTERGRATED CIRCUIT, COMPRISING THE STEPS OF: (A) FORMING A FIRST WIRING CONDUCTOR LAYER OF A PREDETERMINED PATTERN ON THE SURFACE OF A SUBSTRATE; (B) FORMING A RESIN LAYER ON THE RESULTING ENTIRE EXPOSED AREA OF SAID SUBSTRATE AND ON SAID WIRING CONDUCTOR LAYER FORMED ON SAID SUBSTRATE; (C) FORMING, ON SAID RESIN LAYR, A METALLIC FILM WHICH IS SELECTIVELY ETETCHED TO FORM OPENINGS OF A PREDETERMINED SHAPE AT PREDETERMINED POSITIONS FOR CONNECTION BETWEEN THE WIRING CONDUCTOR LAYERS; (D) PROVIDING OPENINGS AT PREDETERMINED POSITIONS IN SAID RESIN LAYER USING SAID METALLIC FILM AS A MASK BY PHYSICALLY ETCHING SAID RESIN LAYER WITH A PLASMA DISCHARGE ATMOSPHERE, SAID OPENINGS REACHING SAID WIRING CODUCTOR LAYER LOCATED BENEATH SAID RESIN LAYER; (E) REMOVING SAID METALLIC FILM FORMED BY THE STEPS (C) WITH AN ETCHANT; AND (F) FORMING A SECOND WIRING CONDUCTOR LAYER OF A PREDETERMINED PATTERN, WHICH IS ELECTRICALLY AND MECHANICALLY CONNECTED WITH THE EXPOSED PARTS OF SAID FIRST WIRING CONDUCTOR LAYER PARTIALLY EXPOSED THROUGH THE STEP (D) AND WHICH EXTENDS ON SAID RESIN LAYER FORMED BY THE STEP (B).
A METHOD OF PRODUCING A MULTILAYER WIRING STRUCTURE FOR AN INTERGRATED CIRCUIT, COMPRISING THE STEPS OF: (A) FORMING A FIRST WIRING CONDUCTOR LAYER OF A PREDETERMINED PATTERN ON THE SURFACE OF A SUBSTRATE; (B) FORMING A RESIN LAYER ON THE RESULTING ENTIRE EXPOSED AREA OF SAID SUBSTRATE AND ON SAID WIRING CONDUCTOR LAYER FORMED ON SAID SUBSTRATE; (C) FORMING, ON SAID RESIN LAYR, A METALLIC FILM WHICH IS SELECTIVELY ETETCHED TO FORM OPENINGS OF A PREDETERMINED SHAPE AT PREDETERMINED POSITIONS FOR CONNECTION BETWEEN THE WIRING CONDUCTOR LAYERS; (D) PROVIDING OPENINGS AT PREDETERMINED POSITIONS IN SAID RESIN LAYER USING SAID METALLIC FILM AS A MASK BY PHYSICALLY ETCHING SAID RESIN LAYER WITH A PLASMA DISCHARGE ATMOSPHERE, SAID OPENINGS REACHING SAID WIRING CODUCTOR LAYER LOCATED BENEATH SAID RESIN LAYER; (E) REMOVING SAID METALLIC FILM FORMED BY THE STEPS (C) WITH AN ETCHANT; AND (F) FORMING A SECOND WIRING CONDUCTOR LAYER OF A PREDETERMINED PATTERN, WHICH IS ELECTRICALLY AND MECHANICALLY CONNECTED WITH THE EXPOSED PARTS OF SAID FIRST WIRING CONDUCTOR LAYER PARTIALLY EXPOSED THROUGH THE STEP (D) AND WHICH EXTENDS ON SAID RESIN LAYER FORMED BY THE STEP (B).
Claim 2
Independent Claim
186 words
A METHOD OF PRODUCING A MULTILAYER WIRING STRUCTURE FOR AN INTERGRATED CIRCUIT, COMPRISING THE STEPS OF: (A) FORMING A FIRST WIRING CONDUCTOR LAYER OF A PREDETERMINED PATTERN ON THE SURFACE OF A SUBSTRATE; (B) FORMING A RESIN LAYER ON THE RESULTING ENTIRE EXPOSED AREA OF SAID SUBSTRATE AND ON SAID WIRING CONDUCTOR LAYER FORMED ON SAID SUBSTRATE; (C) FORMING, ON SAID RESIN LAYR, A METALLIC FILM WHICH IS SELECTIVELY ETETCHED TO FORM OPENINGS OF A PREDETERMINED SHAPE AT PREDETERMINED POSITIONS FOR CONNECTION BETWEEN THE WIRING CONDUCTOR LAYERS; (D) PROVIDING OPENINGS AT PREDETERMINED POSITIONS IN SAID RESIN LAYER USING SAID METALLIC FILM AS A MASK BY PHYSICALLY ETCHING SAID RESIN LAYER WITH A PLASMA DISCHARGE ATMOSPHERE, SAID OPENINGS REACHING SAID WIRING CODUCTOR LAYER LOCATED BENEATH SAID RESIN LAYER; (E) REMOVING SAID METALLIC FILM FORMED BY THE STEPS (C) WITH AN ETCHANT; AND (F) FORMING A SECOND WIRING CONDUCTOR LAYER OF A PREDETERMINED PATTERN, WHICH IS ELECTRICALLY AND MECHANICALLY CONNECTED WITH THE EXPOSED PARTS OF SAID FIRST WIRING CONDUCTOR LAYER PARTIALLY EXPOSED THROUGH THE STEP (D) AND WHICH EXTENDS ON SAID RESIN LAYER FORMED BY THE STEP (B).