Patent US3937902A successfully refreshed from Google Patents.
Patent US7956473B2 successfully refreshed from Google Patents.
US7956473B2
Active / In Force
US
⏱️ 1.7 years remaining
Semiconductor device
Assignee: Renesas Electronics Corp
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Filing: 2008-07-23
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Granted: 2011-06-07
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Expires: 2028-07-23
Abstract
Abstract Method of manufacturing semiconductor device including forming inter-layer insulating film on semiconductor substrate. First metal film is formed on inter-layer insulating film. First resist is formed on first metal film and patterned. Anisotropic etching performed on first metal film using first resist as mask. First resist is removed and second metal film is formed on inter-layer insulating film to cover remaining first metal film. Second resist is formed on second metal film in area where first metal film exists on inter-layer insulating film and part of area where first metal film does not exist. Anisotropic etching is performed on second metal film using second resist as mask and bonding pad having first metal film and second metal film, and upper layer wiring having second metal film and not first metal film. Second resist is removed. Surface protection film covering bonding pad is formed. Pad opening is formed on bonding pad.
Inventors
- 👤 Hiroyuki MOMONO
- 👤 Hiroshi Mitsuyama
- 👤 Katsuhiro Hasegawa
- 👤 Keiko Nishitsuji
- 👤 Kazunobu Miki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 08:25
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10W; H10W20/00; H10W20/01; H10W20/031; H10W72/00; H10W72/01; H10W72/019; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/90; H10W72/921; H10W72/923; H10W72/9232; H10W72/931; H10W72/932; H10W72/951; H10W72/952; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
225 words
A method of manufacturing a semiconductor device comprising: a step of forming an inter-layer insulating film on a semiconductor substrate; a step of forming a first metal film on the inter-layer insulating film; a step of forming a first resist on the first metal film and patterning the first resist; a step of performing anisotropic etching on the first metal film using the first resist as a mask; a step of removing the first resist; a step of forming a second metal film on the inter-layer insulating film so as to cover the remaining first metal film; a step of forming a second resist on the second metal film in an area where the first metal film exists on the inter-layer insulating film and part of an area where the first metal film does not exist; a step of performing anisotropic etching on the second metal film using the second resist as a mask and forming a bonding pad having the first metal film and the second metal film and an upper layer wiring which has the second metal film, yet not the first metal film; a step of removing the second resist; a step of forming a surface protection film so as to cover the bonding pad; and a step of forming a pad opening in the surface protection film on the bonding pad.
Claim 2
Independent Claim
225 words
A method of manufacturing a semiconductor device comprising: a step of forming an inter-layer insulating film on a semiconductor substrate; a step of forming a first metal film on the inter-layer insulating film; a step of forming a first resist on the first metal film and patterning the first resist; a step of performing anisotropic etching on the first metal film using the first resist as a mask; a step of removing the first resist; a step of forming a second metal film on the inter-layer insulating film so as to cover the remaining first metal film; a step of forming a second resist on the second metal film in an area where the first metal film exists on the inter-layer insulating film and part of an area where the first metal film does not exist; a step of performing anisotropic etching on the second metal film using the second resist as a mask and forming a bonding pad having the first metal film and the second metal film and an upper layer wiring which has the second metal film, yet not the first metal film; a step of removing the second resist; a step of forming a surface protection film so as to cover the bonding pad; and a step of forming a pad opening in the surface protection film on the bonding pad.
Claim 3
Independent Claim
301 words
A method of manufacturing a semiconductor device comprising: a step of forming a lower layer wiring on a semiconductor substrate; a step of forming an inter-layer insulating film on the semiconductor substrate so as to cover the lower layer wiring; a step of forming a first contact hole in the inter-layer insulating film and exposing part of the lower layer wiring; a step of forming a first metal film on the inter-layer insulating film and in the first contact hole; a step of forming a first resist on the first metal film and removing the first resist from an area where at least the first contact hole exists; a step of performing anisotropic etching on the first metal film using the first resist as a mask, leaving at least the first metal film in the first contact hole and removing the first metal film on the inter-layer insulating film; a step of removing the first resist; a step of forming a second metal film on the inter-layer insulating film so as to cover the remaining first metal film; a step of forming a second resist on the second metal film in an area where the first metal film exists on the inter-layer insulating film and an area where the first contact hole exists; a step of performing anisotropic etching on the second metal film using the second resist as a mask and forming a bonding pad having the first metal film and the second metal film and an upper layer wiring having the second metal film, yet not the first metal film; a step of removing the second resist; a step of forming a surface protection film so as to cover the bonding pad; and a step of forming a pad opening in the surface protection film on the bonding pad.
Claim 4
Independent Claim
301 words
A method of manufacturing a semiconductor device comprising: a step of forming a lower layer wiring on a semiconductor substrate; a step of forming an inter-layer insulating film on the semiconductor substrate so as to cover the lower layer wiring; a step of forming a first contact hole in the inter-layer insulating film and exposing part of the lower layer wiring; a step of forming a first metal film on the inter-layer insulating film and in the first contact hole; a step of forming a first resist on the first metal film and removing the first resist from an area where at least the first contact hole exists; a step of performing anisotropic etching on the first metal film using the first resist as a mask, leaving at least the first metal film in the first contact hole and removing the first metal film on the inter-layer insulating film; a step of removing the first resist; a step of forming a second metal film on the inter-layer insulating film so as to cover the remaining first metal film; a step of forming a second resist on the second metal film in an area where the first metal film exists on the inter-layer insulating film and an area where the first contact hole exists; a step of performing anisotropic etching on the second metal film using the second resist as a mask and forming a bonding pad having the first metal film and the second metal film and an upper layer wiring having the second metal film, yet not the first metal film; a step of removing the second resist; a step of forming a surface protection film so as to cover the bonding pad; and a step of forming a pad opening in the surface protection film on the bonding pad.
Claim 5
Dependent Claim
44 words
The method of manufacturing a semiconductor device according to claim 1 , wherein the second metal film of the bonding pad is made wider than the first metal film of the bonding pad by at least the film thickness of the first metal film.
Claim 6
Dependent Claim
28 words
The method of manufacturing a semiconductor device according to claim 3 , wherein the pad opening is made narrower than the first metal film of the bonding pad.
Claim 7
Dependent Claim
33 words
The method of manufacturing a semiconductor device according to claim 1 , wherein the second metal film of the bonding pad is made narrower than the first metal film of the bonding pad.
Claim 8
Dependent Claim
28 words
The method of manufacturing a semiconductor device according to claim 5 , wherein the pad opening is made narrower than the second metal film of the bonding pad.
Claim 9
Dependent Claim
74 words
The method of manufacturing a semiconductor device according to claim 1 , further comprising a step of forming a plurality of second contact holes in the inter-layer insulating film, wherein when the first metal film is formed on the inter-layer insulating film, a plurality of metal plugs are formed by embedding the first metal film in the plurality of second contact holes, and the bonding pad is formed on the plurality of metal plugs.
Claim 10
Dependent Claim
49 words
The method of manufacturing a semiconductor device according to claim 7 , wherein the plurality of bonding pads are arrayed in one direction, and a linear shape is adopted for each metal plug whose longitudinal direction corresponds to the direction in which the plurality of bonding pads are arrayed.
Claim 11
Dependent Claim
38 words
The method of manufacturing a semiconductor device according to claim 1 , wherein the first metal film of the bonding pad is formed over the entire area where the pad opening of the surface protection film is formed.
Claim 12
Dependent Claim
25 words
The method of manufacturing a semiconductor device according to claim 1 , wherein a low dielectric constant film is used as the inter-layer insulating film.
Claim 13
Dependent Claim
22 words
The method of manufacturing a semiconductor device according to claim 1 , wherein an active element is formed below the bonding pad.
Claim 14
Dependent Claim
27 words
The method of manufacturing a semiconductor device according to claim 1 , wherein the film thickness of the second resist is set to 2 μm or less.
Claim 15
Dependent Claim
27 words
The method of manufacturing a semiconductor device according to claim 1 , further comprising a step of performing a test with a probe contacting the bonding pad.
Claim 16
Dependent Claim
24 words
The method of manufacturing a semiconductor device according to claim 1 , further comprising a step of bonding a wire to the bonding pad.
Claim 17
Dependent Claim
26 words
The method of manufacturing a semiconductor device according to claim 1 , wherein the first metal film has greater Young's modulus than the second metal film.
Claim 18
Dependent Claim
124 words
A semiconductor device comprising: a semiconductor substrate; an inter-layer insulating film formed on the semiconductor substrate; a bonding pad formed on the inter-layer insulating film; an upper layer wiring formed in the same layer as the bonding pad on the inter-layer insulating film; and a surface protection film formed so as to cover the bonding pad, in which a pad opening is formed on the bonding pad, wherein the bonding pad comprises a first metal film and a second metal film formed on the first metal film, the upper layer wiring comprises the second metal film, yet not the first metal film, and a first Young's modulus of the first metal film is higher than a second Young's modulus of the second metal film.
Claim 19
Dependent Claim
124 words
A semiconductor device comprising: a semiconductor substrate; an inter-layer insulating film formed on the semiconductor substrate; a bonding pad formed on the inter-layer insulating film; an upper layer wiring formed in the same layer as the bonding pad on the inter-layer insulating film; and a surface protection film formed so as to cover the bonding pad, in which a pad opening is formed on the bonding pad, wherein the bonding pad comprises a first metal film and a second metal film formed on the first metal film, the upper layer wiring comprises the second metal film, yet not the first metal film, and a first Young's modulus of the first metal film is higher than a second Young's modulus of the second metal film.
Claim 20
Dependent Claim
43 words
The semiconductor device according to claim 16 , wherein the second metal film of the bonding pad has a greater width than that of the first metal film of the bonding pad by at least the film thickness of the first metal film.
Claim 21
Dependent Claim
23 words
The semiconductor device according to claim 17 , wherein the pad opening is narrower than the first metal film of the bonding pad.
Claim 22
Dependent Claim
28 words
The semiconductor device according to claim 16 , wherein the second metal film of the bonding pad is narrower than the first metal film of the bonding pad.
Claim 23
Dependent Claim
23 words
The semiconductor device according to claim 19 , wherein the pad opening is narrower than the second metal film of the bonding pad.
Claim 24
Dependent Claim
20 words
The semiconductor device according to claim 16 , further comprising a plurality of metal plugs formed below the bonding pad.
Claim 25
Dependent Claim
48 words
The semiconductor device according to claim 21 , wherein a plurality of bonding pads are arrayed in one direction within a plane, and a linear shape is adopted for each metal plug whose longitudinal direction corresponds to the direction in which the plurality of bonding pads are arrayed.
Claim 26
Dependent Claim
34 words
The semiconductor device according to claim 16 , wherein the first metal film of the bonding pad is formed over the entire area where the pad opening of the surface protection film is formed.
Claim 27
Dependent Claim
19 words
The semiconductor device according to claim 16 , wherein the inter-layer insulating film is a low dielectric constant film.
Claim 28
Dependent Claim
18 words
The semiconductor device according to claim 16 , further comprising an active element formed below the bonding pad.
Claim 29
Dependent Claim
26 words
A method of manufacturing the semiconductor device according to claim 16 , wherein the first metal film has greater Young's modulus than the second metal film.
Claim 30
Dependent Claim
29 words
The semiconductor device according to claim 16 , wherein a first upper surface of the bonding pad is higher than a second upper surface of the upper wiring layer.
Claim 31
Dependent Claim
36 words
The semiconductor device according to claim 27 , wherein each of a first under surface of the bonding pad and a second under surface of the upper layer wiring is connected to the inter-layer insulating film.
Claim 32
Dependent Claim
22 words
The semiconductor device according to claim 16 , wherein the first metal film is tungsten, and the second metal film is aluminum.
Claim 33
Dependent Claim
42 words
The semiconductor device according to claim 29 , wherein a first barrier metal is formed between the first metal film and the inter-layer insulating film, and a second barrier metal is formed between the second metal film and the inter-layer insulating film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2014-06-06 | 2014-12-06 | 2015-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2018-06-06 | 2018-12-06 | 2019-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2022-06-06 | 2022-12-06 | 2023-06-07 | $7700.00 | Window Closed / Lapsed |