Method for manufacturing semiconductor integrated circuit devices using a conductive layer to prevent peeling between a bonding pad and an underlying insulating film

Claim 1

A method of manufacturing a semiconductor integrated circuit device, including the steps of: (a) forming a first insulating film on a semiconductor substrate; (b) forming a first conductor piece on said first insulating film; (c) forming a second insulating film on said first insulating film and said first conductor piece and thereafter forming a first aperture in said second insulating film, said first aperture extending down to an upper surface of said first conductor piece; (d) forming a first conductive film on said second insulating film including the interior of said first aperture, said first conductive film having a thickness smaller than the depth of said first aperture at a central plane portion of said first aperture, and said first conductive film including a tungsten layer; (e) polishing said first conductive film on said second insulating film chemically and mechanically, allowing the first conductive film to remain within said first aperture, thereby forming a second conductor piece within the first aperture, said second conductor piece being constituted by said first conductive film; (f) forming a third conductor piece, which is in contact with said second conductor piece, on said second conductor piece; and (g) connecting an external terminal to said third conductor piece.

Claim 2

A method of manufacturing a semiconductor integrated circuit device, including the steps of: (a) forming a first insulating film on a semiconductor substrate; (b) forming a first conductor piece on said first insulating film; (c) forming a second insulating film on said first insulating film and said first conductor piece and thereafter forming a first aperture in said second insulating film, said first aperture extending down to an upper surface of said first conductor piece; (d) forming a first conductive film on said second insulating film including the interior of said first aperture, said first conductive film having a thickness smaller than the depth of said first aperture at a central plane portion of said first aperture, and said first conductive film including a tungsten layer; (e) polishing said first conductive film on said second insulating film chemically and mechanically, allowing the first conductive film to remain within said first aperture, thereby forming a second conductor piece within the first aperture, said second conductor piece being constituted by said first conductive film; (f) forming a third conductor piece, which is in contact with said second conductor piece, on said second conductor piece; and (g) connecting an external terminal to said third conductor piece.

Claim 5

A method of manufacturing a semiconductor integrated circuit device, comprising the steps of: (a) forming a first insulating film on a semiconductor substrate; (b) forming a first conductor piece on said first insulating film; (c) forming a second insulating film on said first insulating film and said first conductor piece and thereafter forming a first aperture in said second insulating film, said first aperture extending down to an upper surface of said first conductor piece; (d) forming a first conductive film on said second insulating film including the interior of said first aperture, said first conductive film having a thickness smaller than the depth of said first aperture at a central plane portion of said first aperture, and said first conductive film including a tungsten layer; (e) polishing said first conductive film on said second insulating film chemically and mechanically, allowing the first conductive film to remain within said first aperture, thereby forming a second conductor piece within the first aperture, said second conductor piece being constituted by said first conductive film; (f) forming a third conductor piece, which is in contact with said second conductor piece, on said second conductor piece; and (g) connecting wire to said third conductor piece.

Claim 6

A method of manufacturing a semiconductor integrated circuit device, comprising the steps of: (a) forming a first insulating film on a semiconductor substrate; (b) forming a first conductor piece on said first insulating film; (c) forming a second insulating film on said first insulating film and said first conductor piece and thereafter forming a first aperture in said second insulating film, said first aperture extending down to an upper surface of said first conductor piece; (d) forming a first conductive film on said second insulating film including the interior of said first aperture, said first conductive film having a thickness smaller than the depth of said first aperture at a central plane portion of said first aperture, and said first conductive film including a tungsten layer; (e) polishing said first conductive film on said second insulating film chemically and mechanically, allowing the first conductive film to remain within said first aperture, thereby forming a second conductor piece within the first aperture, said second conductor piece being constituted by said first conductive film; (f) forming a third conductor piece, which is in contact with said second conductor piece, on said second conductor piece; and (g) connecting wire to said third conductor piece.

Claim 9

A method of manufacturing a semiconductor integrated circuit device, including the steps of: (a) forming a first insulating film on a semiconductor substrate; (b) forming a first conductor piece on said first insulating film; (c) forming a second insulating film on said first insulating film and said first conductor piece and thereafter forming a first aperture in said second insulating film, said first aperture extending down to an upper surface of said first conductor piece; (d) forming a first conductive film on said second insulating film including the interior of said first aperture, said first conductive film having a thickness smaller than the depth of said first aperture at a central plane portion of said first aperture; (e) polishing said first conductive film on said second insulating film chemically and mechanically, allowing the first conductive film to remain within said first aperture, thereby forming a second conductor piece within the first aperture, said second conductor piece being constituted by said first conductive film; (f) forming a third conductor piece, which is in contact with said second conductor piece, on said second conductor piece, including: (f 1 ) forming an aluminum film on said second insulating film and said second conductor piece; and (f 2 ) patterning said aluminum film into a predetermined shape to form said third conductor piece constituted by said aluminum film; and (g) connecting an external terminal to said third conductor piece.

Claim 10

A method of manufacturing a semiconductor integrated circuit device, including the steps of: (a) forming a first insulating film on a semiconductor substrate; (b) forming a first conductor piece on said first insulating film; (c) forming a second insulating film on said first insulating film and said first conductor piece and thereafter forming a first aperture in said second insulating film, said first aperture extending down to an upper surface of said first conductor piece; (d) forming a first conductive film on said second insulating film including the interior of said first aperture, said first conductive film having a thickness smaller than the depth of said first aperture at a central plane portion of said first aperture; (e) polishing said first conductive film on said second insulating film chemically and mechanically, allowing the first conductive film to remain within said first aperture, thereby forming a second conductor piece within the first aperture, said second conductor piece being constituted by said first conductive film; (f) forming a third conductor piece, which is in contact with said second conductor piece, on said second conductor piece, including: (f 1 ) forming an aluminum film on said second insulating film and said second conductor piece; and (f 2 ) patterning said aluminum film into a predetermined shape to form said third conductor piece constituted by said aluminum film; and (g) connecting an external terminal to said third conductor piece.

Claim 12

A method of manufacturing a semiconductor integrated circuit device, including the steps of: (a) forming a first insulating film on a semiconductor substrate; (b) forming a first conductor piece on said first insulating film; (c) forming a second insulating film on said first insulating film and said first conductor piece and thereafter forming a first aperture in said second insulating film, said first aperture extending down to an upper surface of said first conductor piece; (d) forming a first conductive film on said second insulating film including the interior of said first aperture, said first conductive film having a thickness smaller than the depth of said first aperture at a central plane portion of said first aperture; (e) polishing said first conductive film on said second insulating film chemically and mechanically, allowing the first conductive film to remain within said first aperture, thereby forming a second conductor piece within the first aperture, said second conductor piece being constituted by said first conductive film; (f) forming a third conductor piece, which is in contact with said second conductor piece, on said second conductor piece; (g) connecting an external terminal to said third conductor piece; (h) depositing a third insulating film on said second insulating film and said third conductor piece; and (i) forming a second aperture in said third insulating film in a region where said third conductor piece and said external terminal are connected together.

Claim 13

A method of manufacturing a semiconductor integrated circuit device, including the steps of: (a) forming a first insulating film on a semiconductor substrate; (b) forming a first conductor piece on said first insulating film; (c) forming a second insulating film on said first insulating film and said first conductor piece and thereafter forming a first aperture in said second insulating film, said first aperture extending down to an upper surface of said first conductor piece; (d) forming a first conductive film on said second insulating film including the interior of said first aperture, said first conductive film having a thickness smaller than the depth of said first aperture at a central plane portion of said first aperture; (e) polishing said first conductive film on said second insulating film chemically and mechanically, allowing the first conductive film to remain within said first aperture, thereby forming a second conductor piece within the first aperture, said second conductor piece being constituted by said first conductive film; (f) forming a third conductor piece, which is in contact with said second conductor piece, on said second conductor piece; (g) connecting an external terminal to said third conductor piece; (h) depositing a third insulating film on said second insulating film and said third conductor piece; and (i) forming a second aperture in said third insulating film in a region where said third conductor piece and said external terminal are connected together.

Claim 14

A method of manufacturing a semiconductor integrated circuit device, including the steps of: (a) forming a first insulating film on a main surface of a semiconductor substrate; (b) forming a first conductor piece on said first insulating film in a first region of the main surface of said semiconductor substrate and forming a fourth conductor piece on said first insulating film in a second region of the main surface of said semiconductor substrate; (c) forming a second insulating film on said first insulating film and said first and fourth conductor pieces; (d) etching said second insulating film on said first conductor piece to form a first aperture having a first diameter and extending down to said first conductor piece, and etching said second insulating film on said fourth conductor piece to form a third aperture having a second diameter and extending down to said fourth conductor piece; (e) forming a first conductive film on said second insulating film including the interior of said first aperture and that of said third aperture, said first conductive film having a thickness smaller than half of said first diameter and not smaller than half of said second diameter; (f) polishing said first conductive film on said second insulating film chemically and mechanically, allowing said first conductive film to remain within said first and third apertures, thereby forming a second conductor piece and a fifth conductor piece within said first and third apertures, respectively, said second and fifth conductor pieces being each constituted by said first conductor film; (g) forming a second conductive film on said second and fifth conductor pieces and said second insulating film; (h) forming third and sixth conductor pieces in said first and second regions, respectively, said third and sixth conductor pieces being in contact with said second and fifth conductor pieces, respectively; (i) forming a third insulating film on said third and sixth conductor pieces and said second insulating film; (j) etching said third insulating film on said third conductor piece to form a second aperture in said third insulating film, said second aperture extending down to said third conductor piece; and (k) connecting an external terminal to said third conductor piece after said step (j).

Claim 15

A method of manufacturing a semiconductor integrated circuit device, including the steps of: (a) forming a first insulating film on a main surface of a semiconductor substrate; (b) forming a first conductor piece on said first insulating film in a first region of the main surface of said semiconductor substrate and forming a fourth conductor piece on said first insulating film in a second region of the main surface of said semiconductor substrate; (c) forming a second insulating film on said first insulating film and said first and fourth conductor pieces; (d) etching said second insulating film on said first conductor piece to form a first aperture having a first diameter and extending down to said first conductor piece, and etching said second insulating film on said fourth conductor piece to form a third aperture having a second diameter and extending down to said fourth conductor piece; (e) forming a first conductive film on said second insulating film including the interior of said first aperture and that of said third aperture, said first conductive film having a thickness smaller than half of said first diameter and not smaller than half of said second diameter; (f) polishing said first conductive film on said second insulating film chemically and mechanically, allowing said first conductive film to remain within said first and third apertures, thereby forming a second conductor piece and a fifth conductor piece within said first and third apertures, respectively, said second and fifth conductor pieces being each constituted by said first conductor film; (g) forming a second conductive film on said second and fifth conductor pieces and said second insulating film; (h) forming third and sixth conductor pieces in said first and second regions, respectively, said third and sixth conductor pieces being in contact with said second and fifth conductor pieces, respectively; (i) forming a third insulating film on said third and sixth conductor pieces and said second insulating film; (j) etching said third insulating film on said third conductor piece to form a second aperture in said third insulating film, said second aperture extending down to said third conductor piece; and (k) connecting an external terminal to said third conductor piece after said step (j).

Claim 18

A method of manufacturing a semiconductor integrated circuit device, including the steps of: (a) forming a first insulating film on a main surface of a semiconductor substrate; (b) forming a first conductor piece on said first insulating film in a first region of the main surface of said semiconductor substrate and forming a fourth conductor piece on said first insulating film in a second region of the main surface of said semiconductor substrate; (c) forming a second insulating film on said first insulating film and said first and fourth conductor pieces; (d) etching said second insulating film on said first conductor piece to form a first aperture having a first diameter and extending down to said first conductor piece, and etching said second insulating film on said fourth conductor piece to form a third aperture having a second diameter and extending down to said fourth conductor piece; (e) forming a first conductive film on said second insulating film including the interior of said first aperture and that of said third aperture, said first conductive film having a thickness smaller than half of said first diameter and not smaller than half of said second diameter; (f) polishing said first conductive film on said second insulating film chemically and mechanically, allowing said first conductive film to remain within said first and third apertures, thereby forming a second conductor piece and a fifth conductor piece within said first and third apertures, respectively, said second and fifth conductor pieces being each constituted by said first conductor film; (g) forming a second conductive film on said second and fifth conductor pieces and said second insulating film; (h) forming third and sixth conductor pieces in said first and second regions, respectively, said third and sixth conductor pieces being in contact with said second and fifth conductor pieces, respectively; (i) forming a third insulating film on said third and sixth conductor pieces and said second insulating film; (j) etching said third insulating film on said third conductor piece to form a second aperture in said third insulating film, said second aperture extending down to said third conductor piece; and (k) connecting wire to said third conductor piece after said step (j).

Claim 19

A method of manufacturing a semiconductor integrated circuit device, including the steps of: (a) forming a first insulating film on a main surface of a semiconductor substrate; (b) forming a first conductor piece on said first insulating film in a first region of the main surface of said semiconductor substrate and forming a fourth conductor piece on said first insulating film in a second region of the main surface of said semiconductor substrate; (c) forming a second insulating film on said first insulating film and said first and fourth conductor pieces; (d) etching said second insulating film on said first conductor piece to form a first aperture having a first diameter and extending down to said first conductor piece, and etching said second insulating film on said fourth conductor piece to form a third aperture having a second diameter and extending down to said fourth conductor piece; (e) forming a first conductive film on said second insulating film including the interior of said first aperture and that of said third aperture, said first conductive film having a thickness smaller than half of said first diameter and not smaller than half of said second diameter; (f) polishing said first conductive film on said second insulating film chemically and mechanically, allowing said first conductive film to remain within said first and third apertures, thereby forming a second conductor piece and a fifth conductor piece within said first and third apertures, respectively, said second and fifth conductor pieces being each constituted by said first conductor film; (g) forming a second conductive film on said second and fifth conductor pieces and said second insulating film; (h) forming third and sixth conductor pieces in said first and second regions, respectively, said third and sixth conductor pieces being in contact with said second and fifth conductor pieces, respectively; (i) forming a third insulating film on said third and sixth conductor pieces and said second insulating film; (j) etching said third insulating film on said third conductor piece to form a second aperture in said third insulating film, said second aperture extending down to said third conductor piece; and (k) connecting wire to said third conductor piece after said step (j).