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Patent US7112485B2 successfully refreshed from Google Patents.
US7112485B2
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Systems and methods for forming zirconium and/or hafnium-containing layers
Assignee: Micron Technology Inc
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Filing: 2002-08-28
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Granted: 2006-09-26
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Expires: 2022-08-28
Abstract
Abstract A method of forming (and apparatus for forming) a zirconium and/or hafnium-containing layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more silicon precursor compounds of the formula Si(OR) 4 with one or more zirconium and/or hafnium precursor compounds of the formula M(NR′R″) 4 , wherein R, R′, and R″ are each independently an organic group and M is zirconium or hafnium.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:52
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; C23C16/45553; C23C16/56; H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6548; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6928; H10P14/6934; H10P14/6936; H10P14/694; H10P14/6943; H10P14/69433; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/693; H10P14/6938; H10P14/6939; H10P14/69392
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
85 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing at least one silicon precursor compound having the formula Si(OR) 4 and at least one precursor compound of the formula M(NR′R″) 4 , wherein R, R′, and R″ arc each independently an organic group and M is zirconium or hafnium; and contacting the precursor compounds to form a metal-containing layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process.
Claim 2
Independent Claim
85 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing at least one silicon precursor compound having the formula Si(OR) 4 and at least one precursor compound of the formula M(NR′R″) 4 , wherein R, R′, and R″ arc each independently an organic group and M is zirconium or hafnium; and contacting the precursor compounds to form a metal-containing layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein the semiconductor substrate or substrate assembly is a silicon wafer.
Claim 4
Dependent Claim
19 words
The method of claim 1 wherein the metal-containing layer comprises metal silicates, metal oxides, silicon oxides, and combinations thereof.
Claim 5
Dependent Claim
19 words
The method of claim 3 wherein the metal-containing layer comprises zirconium silicate, hafnium silicate, zirconium-hafnium silicate, or combinations thereof.
Claim 6
Dependent Claim
21 words
The method of claim 3 wherein the metal-containing layer comprises a solid solution comprising zirconium oxides, hafnium oxides, and silicon oxides.
Claim 7
Dependent Claim
20 words
The method of claim 1 wherein the metal-containing layer has a thickness of about 30 Å to about 80 Å.
Claim 8
Independent Claim
102 words
A method of manufacturing a semiconductor structure, the method comprising; providing a semiconductor substrate or substrate assembly within a deposition chamber; providing at least one silicon precursor compound having the formula Si(OR) 4 and at least one precursor compound of the formula M(NR′R″) 4 , wherein R, R′, and R″ are each independently an organic group and M is zirconium or hafnium; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the semiconductor substrate or substrate assembly to form a metal-containing dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly.
Claim 9
Independent Claim
102 words
A method of manufacturing a semiconductor structure, the method comprising; providing a semiconductor substrate or substrate assembly within a deposition chamber; providing at least one silicon precursor compound having the formula Si(OR) 4 and at least one precursor compound of the formula M(NR′R″) 4 , wherein R, R′, and R″ are each independently an organic group and M is zirconium or hafnium; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the semiconductor substrate or substrate assembly to form a metal-containing dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly.
Claim 10
Dependent Claim
19 words
The method of claim 7 wherein the precursor compounds are vaporized in the presence of an inert carrier gas.
Claim 11
Dependent Claim
20 words
The method of claim 7 wherein the metal-containing dielectric layer comprises metal silicates, metal oxides, silicon oxides, and combinations thereof.
Claim 12
Dependent Claim
20 words
The method of claim 9 wherein the metal-containing dielectric layer comprises zirconium silicate, hafnium silicate, zirconium-hafnium silicate, or combinations thereof.
Claim 13
Dependent Claim
22 words
The method of claim 10 wherein the metal-containing dielectric layer comprises a solid solution comprising zirconium oxides, hafnium oxides, and silicon oxides.
Claim 14
Dependent Claim
20 words
The method of claim 7 wherein vaporizing and directing the precursor compounds is accomplished using a chemical vapor deposition process.
Claim 15
Dependent Claim
23 words
The method of claim 12 wherein the temperature of the semiconductor substrate or substrate assembly is about 100° C. to about 600° C.
Claim 16
Dependent Claim
28 words
The method of claim 12 wherein the semiconductor substrate or substrate assembly is in a deposition, chamber having a pressure of about 0.1 torr to about 10 torr.
Claim 17
Dependent Claim
26 words
The method of claim 7 wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 18
Dependent Claim
27 words
The method of claim 15 wherein during the atomic layer deposition process the metal-containing layer is formed by alternately introducing the precursor compounds during each deposition cycle.
Claim 19
Dependent Claim
23 words
The method of claim 15 wherein the temperature of the semiconductor substrate or substrate assembly is about 25° C. to about 400° C.
Claim 20
Dependent Claim
29 words
The method of claim 15 wherein the semiconductor substrate or substrate assembly is in a deposition chamber having a pressure of about 10 −4 torr to about 1 torr.
Claim 21
Dependent Claim
26 words
The method of claim 15 further comprising a step of annealing the formed metal-containing layer at a temperature of about 400° C. to about 750° C.
Claim 22
Independent Claim
75 words
A method of forming a metal-containing layer on a substrate, the method comprising: providing a substrate; providing at least one silicon precursor compound having the formula Si(OR) 4 and at least one precursor compound of the formula M(NR′R″) 4 , wherein R, R′, and R″ are each independently an organic group and M is zirconium or hafnium; and contacting the precursor compounds to form a metal-containing layer on the substrate using a vapor deposition process.
Claim 23
Independent Claim
75 words
A method of forming a metal-containing layer on a substrate, the method comprising: providing a substrate; providing at least one silicon precursor compound having the formula Si(OR) 4 and at least one precursor compound of the formula M(NR′R″) 4 , wherein R, R′, and R″ are each independently an organic group and M is zirconium or hafnium; and contacting the precursor compounds to form a metal-containing layer on the substrate using a vapor deposition process.
Claim 24
Dependent Claim
19 words
The method of claim 20 wherein the metal-containing layer comprises metal silicates, metal oxides, silicon oxides, and combinations thereof.
Claim 25
Dependent Claim
16 words
The method of claim 20 wherein R, R′, and R″ are each independently a (C1–C8)alkyl moiety.
Claim 26
Dependent Claim
36 words
The method of claim 22 wherein R is selected from the group consisting of methyl, ethyl, n-propyl, isopropyl, and butyl, and R′ and R″ are each independently selected from the group consisting of methyl and ethyl.
Claim 27
Dependent Claim
14 words
The method of claim 23 wherein the silicon precursor compound is tetraisopropoxysilane or tetraethoxysilane.
Claim 28
Independent Claim
84 words
A method of forming a metal-containing layer on a substrate, the method comprising: providing a substrate; providing at least one silicon precursor compound having the formula Si(OR) 4 and at least one precursor compound of the formula M(NR′R″) 4 , wherein R, R′, and R″ are each independently an organic group and M is zirconium or hafnium; and vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal-containing layer on the substrate.
Claim 29
Independent Claim
84 words
A method of forming a metal-containing layer on a substrate, the method comprising: providing a substrate; providing at least one silicon precursor compound having the formula Si(OR) 4 and at least one precursor compound of the formula M(NR′R″) 4 , wherein R, R′, and R″ are each independently an organic group and M is zirconium or hafnium; and vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal-containing layer on the substrate.
Claim 30
Dependent Claim
20 words
The method of claim 25 wherein vaporizing and directing the precursor compounds is accomplished using a chemical vapor deposition process.
Claim 31
Dependent Claim
26 words
The method of claim 25 wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 32
Independent Claim
98 words
A method of manufacturing a memory device structure, the method comprising: providing a substrate having a first electrode thereon; providing at least one silicon precursor compound baying the formula Si(OR) 4 and at least one precursor compound of the formula M(NR′R″) 4 , wherein R, R′, and R″ are each independently an organic group and M is zirconium or hafnium; vaporizing the precursor compounds to form vaporized precursor compounds; directing the vaporized precursor compounds to the substrate to form a dielectric layer on the first electrode of the substrate; and forming a second electrode on the dielectric layer.
Claim 33
Independent Claim
98 words
A method of manufacturing a memory device structure, the method comprising: providing a substrate having a first electrode thereon; providing at least one silicon precursor compound baying the formula Si(OR) 4 and at least one precursor compound of the formula M(NR′R″) 4 , wherein R, R′, and R″ are each independently an organic group and M is zirconium or hafnium; vaporizing the precursor compounds to form vaporized precursor compounds; directing the vaporized precursor compounds to the substrate to form a dielectric layer on the first electrode of the substrate; and forming a second electrode on the dielectric layer.
Claim 34
Dependent Claim
12 words
The method of claim 28 wherein the dielectric forms a capacitor layer.
Claim 35
Dependent Claim
11 words
The method of claim 28 wherein the dielectric forms a gate.
Claim 36
Dependent Claim
41 words
The method of claim 28 wherein the precursor compounds comprise at least one compound of the formula Hf(NR′R″) 4 and at least one compound of the formula Zr(NR′R″) 4 , wherein R, R′, and R″ are each independently an organic group.
Claim 37
Dependent Claim
20 words
The method of claim 31 wherein vaporizing and directing the precursor compounds is accomplished using a chemical vapor deposition process.
Claim 38
Dependent Claim
26 words
The method of claim 31 wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2009-09-25 | 2010-03-27 | 2010-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2013-09-25 | 2014-03-27 | 2014-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2017-09-25 | 2018-03-27 | 2018-09-26 | $7700.00 | Window Closed / Lapsed |