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Systems and methods for forming metal oxides using alcohols
Assignee: Micron Technology Inc
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Filing: 2002-08-28
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Granted: 2006-05-09
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Expires: 2022-08-28
Abstract
Abstract A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process, one or more alcohols, and one or more metal-containing precursor compounds.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:52
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; C23C16/403; C23C16/405; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45553; F; F17; F17C; F17C11/00; H10P14/66; H10P14/668; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69392; H10P14/69394; H10P14/69396; H10P14/69397
Claims Analysis
Total Claims: 50
Claim 1
Independent Claim
167 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) x (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; and contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals.
Claim 2
Independent Claim
167 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) x (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; and contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein the substrate is a silicon wafer.
Claim 4
Dependent Claim
33 words
The method of claim 1 wherein M 1 and M 2 are each independently selected from the group of metals consisting of Groups 3, 4, 5, 6, 7, 13, 14, and the lanthanides.
Claim 5
Dependent Claim
35 words
The method of claim 3 wherein M 1 and M 2 are each independently selected from the group of metals consisting of Y, La, Pr, Nd, Gd, Ti, Zr, Hf, Nb, Ta, Al, and Si.
Claim 6
Dependent Claim
21 words
The method of claim 1 wherein the metal oxide layer has a thickness of about 30 Å to about 80 Å.
Claim 7
Dependent Claim
14 words
The method of claim 1 wherein each R is independently a (C1–C10) organic group.
Claim 8
Dependent Claim
27 words
The method of claim 1 wherein R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or a (C1–C6) organic group.
Claim 9
Dependent Claim
17 words
The method of claim 1 wherein w is 0 to 2 and z is 2 to 6.
Claim 10
Dependent Claim
11 words
The method of claim 1 wherein q is 2 to 3.
Claim 11
Independent Claim
175 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein the metal oxide layer comprises two or more different metals.
Claim 12
Independent Claim
175 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein the metal oxide layer comprises two or more different metals.
Claim 13
Dependent Claim
20 words
The method of claim 10 wherein vaporizing and directing the precursor compounds is accomplished using a chemical vapor deposition process.
Claim 14
Dependent Claim
26 words
The method of claim 10 wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 15
Independent Claim
173 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , and R 3 are each independently hydrogen or an organic group, and R 4 is hydrogen or an organic moiety; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; and contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals.
Claim 16
Independent Claim
173 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , and R 3 are each independently hydrogen or an organic group, and R 4 is hydrogen or an organic moiety; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; and contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals.
Claim 17
Independent Claim
181 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , and R 3 are each independently hydrogen or an organic group, and R 4 is hydrogen or an organic moiety; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein the metal oxide layer comprises two or more different metals.
Claim 18
Independent Claim
181 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , and R 3 are each independently hydrogen or an organic group, and R 4 is hydrogen or an organic moiety; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein the metal oxide layer comprises two or more different metals.
Claim 19
Independent Claim
186 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , and R 3 are each independently hydrogen or an organic group, and R 4 is hydrogen or an organic moiety; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; and contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals, with the proviso that the precursor compounds do not comprise AlMe 3 .
Claim 20
Independent Claim
186 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , and R 3 are each independently hydrogen or an organic group, and R 4 is hydrogen or an organic moiety; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; and contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals, with the proviso that the precursor compounds do not comprise AlMe 3 .
Claim 21
Dependent Claim
12 words
The method of claim 15 wherein the substrate is a silicon wafer.
Claim 22
Dependent Claim
33 words
The method of claim 15 wherein M 1 and M 2 are each independently selected from the group of metals consisting of Groups 3, 4, 5, 6, 7, 13, 14, and the lanthanides.
Claim 23
Dependent Claim
35 words
The method of claim 17 wherein M 1 and M 2 are each independently selected from the group of metals consisting of Y, La, Pr, Nd, Gd, Ti, Zr, Hf, Nb, Ta, Al, and Si.
Claim 24
Dependent Claim
21 words
The method of claim 15 wherein the metal oxide layer has a thickness of about 30 Å to about 80 Å.
Claim 25
Dependent Claim
14 words
The method of claim 15 wherein each R is independently a (C1–C10) organic group.
Claim 26
Dependent Claim
27 words
The method of claim 15 wherein R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or a (C1–C6) organic group.
Claim 27
Dependent Claim
17 words
The method of claim 15 wherein w is 0 to 2 and z is 2 to 6.
Claim 28
Dependent Claim
11 words
The method of claim 15 wherein q is 2 to 3.
Claim 29
Independent Claim
194 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , and R 3 are each independently hydrogen or an organic group, and R 4 is hydrogen or an organic moiety; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein the metal oxide layer comprises two or more different metals, with the proviso that the precursor compounds do not comprise AlMe 3 .
Claim 30
Independent Claim
194 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , and R 3 are each independently hydrogen or an organic group, and R 4 is hydrogen or an organic moiety; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein the metal oxide layer comprises two or more different metals, with the proviso that the precursor compounds do not comprise AlMe 3 .
Claim 31
Dependent Claim
20 words
The method of claim 24 wherein vaporizing and directing the precursor compounds is accomplished using a chemical vapor deposition process.
Claim 32
Dependent Claim
26 words
The method of claim 24 wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 33
Independent Claim
187 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at Jeast one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3, with the proviso that the at least one alcohol does not comprise isopropyl alcohol; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Fonnula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , and R 3 are each independently hydrogen or an organic group, and R 4 is hydrogen or an organic moiety; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; and contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals.
Claim 34
Independent Claim
187 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at Jeast one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3, with the proviso that the at least one alcohol does not comprise isopropyl alcohol; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Fonnula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , and R 3 are each independently hydrogen or an organic group, and R 4 is hydrogen or an organic moiety; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; and contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals.
Claim 35
Dependent Claim
12 words
The method of claim 27 wherein the substrate is a silicon wafer.
Claim 36
Dependent Claim
33 words
The method of claim 27 wherein M 1 and M 2 are each independently selected from the group of metals consisting of Groups 3, 4, 5, 6, 7, 13, 14, and the lanthanides.
Claim 37
Dependent Claim
35 words
The method of claim 29 wherein M 1 and M 2 are each independently selected from the group of metals consisting of Y, La, Pr, Nd, Gd, Ti, Zr, Hf, Nb, Ta, Al, and Si.
Claim 38
Dependent Claim
21 words
The method of claim 27 wherein the metal oxide layer has a thickness of about 30 Å to about 80 Å.
Claim 39
Dependent Claim
14 words
The method of claim 27 wherein each R is independently a (C1–C10) organic group.
Claim 40
Dependent Claim
26 words
The method of claim 27 wherein R 1 , R 2 , R 3 and R 4 are each independently hydrogen or a (C1–C6) organic group.
Claim 41
Dependent Claim
17 words
The method of claim 27 wherein w is 0 to 2 and z is 2 to 6.
Claim 42
Dependent Claim
11 words
The method of claim 27 wherein q is 2 to 3.
Claim 43
Independent Claim
195 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3, with the proviso that the at least one alcohol does not comprise isopropyl alcohol; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , and R 3 are each independently hydrogen or an organic group, and R 4 is hydrogen or an organic moiety; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation sates of the metals; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein the metal oxide layer comprises two or more different metals.
Claim 44
Independent Claim
195 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3, with the proviso that the at least one alcohol does not comprise isopropyl alcohol; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , and R 3 are each independently hydrogen or an organic group, and R 4 is hydrogen or an organic moiety; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation sates of the metals; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein the metal oxide layer comprises two or more different metals.
Claim 45
Dependent Claim
20 words
The method of claim 36 wherein vaporizing and directing the precursor compounds is accomplished using a chemical vapor deposition process.
Claim 46
Dependent Claim
26 words
The method of claim 36 wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 47
Independent Claim
200 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3, with the proviso that the at least one alcohol does not comprise isopropyl alcohol; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , and R 3 are each independently hydrogen or an organic group, and R 4 is hydrogen or an organic moiety; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; and contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals, with the proviso that the precursor compounds do not comprise AlMe 3 .
Claim 48
Independent Claim
200 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3, with the proviso that the at least one alcohol does not comprise isopropyl alcohol; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , and R 3 are each independently hydrogen or an organic group, and R 4 is hydrogen or an organic moiety; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; and contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals, with the proviso that the precursor compounds do not comprise AlMe 3 .
Claim 49
Independent Claim
208 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3, with the proviso that the at least one alcohol does not comprise isopropyl alcohol; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , and R 3 are each independently hydrogen or an organic group, and R 4 is hydrogen or an organic moiety; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein the metal oxide layer comprises two or more different metals, with the proviso that the precursor compounds do not comprise AlMe 3 .
Claim 50
Independent Claim
208 words
A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3, with the proviso that the at least one alcohol does not comprise isopropyl alcohol; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , and R 3 are each independently hydrogen or an organic group, and R 4 is hydrogen or an organic moiety; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein the metal oxide layer comprises two or more different metals, with the proviso that the precursor compounds do not comprise AlMe 3 .
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