US6958300B2 — Systems and methods for forming metal oxides usin…

Claim 1

Independent Claim 184 words

A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; each R 1 is independently an organic group; R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; and contacting the precursor compounds to form a metal oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process, wherein the vapor deposition process is an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 2

Independent Claim 184 words

A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; each R 1 is independently an organic group; R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; and contacting the precursor compounds to form a metal oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process, wherein the vapor deposition process is an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 3

Independent Claim 205 words

A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; each R 1 is independently an organic group; R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the semiconductor substrate or substrate assembly to form a metal oxide dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly, wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 4

Independent Claim 205 words

A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; each R 1 is independently an organic group; R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the semiconductor substrate or substrate assembly to form a metal oxide dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly, wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 5

Independent Claim 175 words

A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; each R 1 is independently an organic group; R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; and contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the vapor deposition process is an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 6

Independent Claim 175 words

A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; each R 1 is independently an organic group; R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; and contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the vapor deposition process is an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 7

Independent Claim 187 words

A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; each R 1 is independently an organic group; R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 8

Independent Claim 187 words

A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; each R 1 is independently an organic group; R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 9

Independent Claim 200 words

A method of manufacturing a memory device structure comprising: providing a substrate having a first electrode thereon; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; each R 1 is independently an organic group; R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; vaporizing the precursor compounds to form vaporized precursor compounds; directing the vaporized precursor compounds to the substrate to form a metal oxide dielectric layer on the first electrode of the substrate; and forming a second electrode on the dielectric layer, wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 10

Independent Claim 200 words

A method of manufacturing a memory device structure comprising: providing a substrate having a first electrode thereon; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; each R 1 is independently an organic group; R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; vaporizing the precursor compounds to form vaporized precursor compounds; directing the vaporized precursor compounds to the substrate to form a metal oxide dielectric layer on the first electrode of the substrate; and forming a second electrode on the dielectric layer, wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 11

Independent Claim 179 words

A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; and contacting the precursor compounds to form a metal oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process, wherein the vapor deposition process is an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 12

Independent Claim 179 words

A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; and contacting the precursor compounds to form a metal oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process, wherein the vapor deposition process is an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 13

Dependent Claim 16 words

The method of claim 6 wherein the semiconductor substrate or substrate assembly is a silicon wafer.

Claim 14

Dependent Claim 14 words

The method of claim 6 wherein the metal oxide layer is a dielectric layer.

Claim 15

Dependent Claim 31 words

The method of claim 6 wherein M 1 and M 2 are selected from the group of metals consisting of Groups 3, 4, 5, 6, 7, 13, 14, and the lanthanides.

Claim 16

Dependent Claim 33 words

The method of claim 9 wherein M 1 and M 2 are selected from the group of metals consisting of Y, La, Pr, Nd, Gd, Ti, Zr, Hf, Nb, Ta, Si, and Al.

Claim 17

Dependent Claim 21 words

The method of claim 6 wherein the metal oxide layer has a thickness of about 30 Å to about 80 Å.

Claim 18

Dependent Claim 27 words

The method of claim 6 wherein R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or a (C1-C6) organic group.

Claim 19

Dependent Claim 17 words

The method of claim 6 wherein x is 0 to 2 and y is 2 to 6.

Claim 20

Dependent Claim 17 words

The method of claim 6 wherein w is 0 to 2 and z is 2 to 6.

Claim 21

Dependent Claim 27 words

The method of claim 6 wherein during the atomic layer deposition process the metal-containing layer is formed by alternately introducing the precursor compounds during each deposition cycle.

Claim 22

Dependent Claim 23 words

The method of claim 6 wherein the temperature of the semiconductor substrate or substrate assembly is about 25° C. to about 400° C.

Claim 23

Dependent Claim 29 words

The method of claim 6 wherein the semiconductor substrate or substrate assembly is in a deposition chamber having a pressure of about 10 −4 torr to about 1 ton.

Claim 24

Independent Claim 200 words

A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the semiconductor substrate or substrate assembly to form a metal oxide dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly, wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 25

Independent Claim 200 words

A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the semiconductor substrate or substrate assembly to form a metal oxide dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly, wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 26

Dependent Claim 19 words

The method of claim 18 wherein the precursor compounds are vaporized in the presence of an inert carrier gas.

Claim 27

Dependent Claim 31 words

The method of claim 18 wherein M 1 and M 2 are selected from the group of metals consisting of Groups 3, 4, 5, 6, 7, 13, 14, and the lanthanides.

Claim 28

Independent Claim 170 words

A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; and contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the vapor deposition process is an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 29

Independent Claim 170 words

A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; and contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the vapor deposition process is an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 30

Dependent Claim 12 words

The method of claim 21 wherein the substrate is a silicon wafer.

Claim 31

Dependent Claim 14 words

The method of claim 21 wherein the metal oxide layer is a dielectric layer.

Claim 32

Dependent Claim 31 words

The method of claim 21 wherein M 1 and M 2 are selected from the group of metals consisting of Groups 3, 4, 5, 6, 7, 13, 14, and the lanthanides.

Claim 33

Dependent Claim 33 words

The method of claim 24 wherein M 1 and M 2 are selected from the group of metals consisting of Y, La, Pi, Nd, Gd, Ti, Zr, Hf, Nb, Ta, Si, and Al.

Claim 34

Dependent Claim 21 words

The method of claim 21 wherein the metal oxide layer has a thickness of about 30 Å to about 80 Å.

Claim 35

Dependent Claim 27 words

The method of claim 21 wherein R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or a (C1-C6) organic group.

Claim 36

Independent Claim 182 words

A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 37

Independent Claim 182 words

A method of forming a metal oxide layer on a substrate, the method comprising: providing a substrate; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 38

Independent Claim 195 words

A method of manufacturing a memory device structure comprising: providing a substrate having a first electrode thereon; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; vaporizing the precursor compounds to form vaporized precursor compounds; directing the vaporized precursor compounds to the substrate to form a metal oxide dielectric layer on the first electrode of the substrate; and forming a second electrode on the dielectric layer, wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 39

Independent Claim 195 words

A method of manufacturing a memory device structure comprising: providing a substrate having a first electrode thereon; providing at least one precursor compound of the formula M 1 q (O) x (OR 1 ) y (Formula I) and at least one precursor compound of the formula M 2 (NR 2 ) w (NR 3 R 4 ) z (Formula II), wherein: M 1 and M 2 are the same metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; x is 0 to 4; y is 1 to 8; w is 0 to 4; z is 1 to 8; q is 1 or 2; and x, y, z, and w are dependent on the oxidation states of M 1 and M 2 ; vaporizing the precursor compounds to form vaporized precursor compounds; directing the vaporized precursor compounds to the substrate to form a metal oxide dielectric layer on the first electrode of the substrate; and forming a second electrode on the dielectric layer, wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.

Claim 40

Dependent Claim 46 words

The of claim 29 wherein method the metal oxide dielectric layer comprises a metal oxide selected from the group consisting of ZrO 2 , HfO 2 , Ta 2 O 3 , Al 2 O 3 , TiO 2 , and an oxide of a lanthanide.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2008-10-24	2009-04-25	2009-10-25	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2012-10-24	2013-04-25	2013-10-25	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2016-10-24	2017-04-25	2017-10-25	$7700.00	Window Closed / Lapsed

Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides

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