Method for depositing a coating having a relatively high dielectric constant onto a substrate

Claim 1

A method for depositing a dielectric coating onto a substrate, the substrate being contained within a reactor vessel, said method comprising subjecting the substrate to at least two sequential reaction cycles that comprise: i) supplying to said reactor vessel a gas precursor for a deposition time period while the substrate is at a deposition temperature of greater than about 300° C., said gas precursor having a gas precursor flow rate, said gas precursor comprising an organo-metallic compound that forms a metal oxide on said substrate; and ii) thereafter supplying to said reactor vessel an oxidizing gas for an oxidizing gas time period while the substrate is at an oxidizing gas temperature, said oxidizing gas having an oxidizing gas flow rate, wherein at least a partial monolayer of a dielectric is formed during each of said at least two sequential reaction cycles.

Claim 2

A method for depositing a dielectric coating onto a substrate, the substrate being contained within a reactor vessel, said method comprising subjecting the substrate to at least two sequential reaction cycles that comprise: i) supplying to said reactor vessel a gas precursor for a deposition time period while the substrate is at a deposition temperature of greater than about 300° C., said gas precursor having a gas precursor flow rate, said gas precursor comprising an organo-metallic compound that forms a metal oxide on said substrate; and ii) thereafter supplying to said reactor vessel an oxidizing gas for an oxidizing gas time period while the substrate is at an oxidizing gas temperature, said oxidizing gas having an oxidizing gas flow rate, wherein at least a partial monolayer of a dielectric is formed during each of said at least two sequential reaction cycles.

Claim 18

A method for depositing a dielectric coating onto a semiconductor wafer, the wafer being contained within a reactor vessel, wherein an energy source is in communication with said reactor vessel for heating the wafer, said method comprising subjecting the wafer to at least two sequential reaction cycles that comprise: i) supplying to said reactor vessel a gas precursor for a deposition time period while the wafer is at a deposition temperature of greater than about 300° C., said gas precursor having a gas precursor flow rate, said gas precursor comprising an organo-metallic compound; ii) supplying to said reactor vessel an oxidizing gas for an oxidizing gas time period while the wafer is at an oxidizing gas temperature of greater than about 300° C., said oxidizing gas having an oxidizing gas flow rate, wherein at least a partial monolayer of a dielectric is formed during each of said at least two sequential reaction cycles.

Claim 19

A method for depositing a dielectric coating onto a semiconductor wafer, the wafer being contained within a reactor vessel, wherein an energy source is in communication with said reactor vessel for heating the wafer, said method comprising subjecting the wafer to at least two sequential reaction cycles that comprise: i) supplying to said reactor vessel a gas precursor for a deposition time period while the wafer is at a deposition temperature of greater than about 300° C., said gas precursor having a gas precursor flow rate, said gas precursor comprising an organo-metallic compound; ii) supplying to said reactor vessel an oxidizing gas for an oxidizing gas time period while the wafer is at an oxidizing gas temperature of greater than about 300° C., said oxidizing gas having an oxidizing gas flow rate, wherein at least a partial monolayer of a dielectric is formed during each of said at least two sequential reaction cycles.

Claim 30

A method for depositing a dielectric coating onto a semiconductor wafer, the wafer being contained within a reactor vessel, said method comprising subjecting the wafer to at least two reaction cycles that comprise: a) supplying to said reactor vessel a gas precursor while the wafer is at a deposition temperature of greater than about 300° C., wherein said gas precursor comprises an organo-silicon compound so that the resulting dielectric coating comprises a metal silicate; b) supplying to said reactor vessel an oxidizing gas while the wafer is at an oxidizing gas temperature, wherein at least a partial monolayer of a dielectric is formed said at least two sequential reaction cycles.

Claim 31

A method for depositing a dielectric coating onto a semiconductor wafer, the wafer being contained within a reactor vessel, said method comprising subjecting the wafer to at least two reaction cycles that comprise: a) supplying to said reactor vessel a gas precursor while the wafer is at a deposition temperature of greater than about 300° C., wherein said gas precursor comprises an organo-silicon compound so that the resulting dielectric coating comprises a metal silicate; b) supplying to said reactor vessel an oxidizing gas while the wafer is at an oxidizing gas temperature, wherein at least a partial monolayer of a dielectric is formed said at least two sequential reaction cycles.

Claim 39

A method for depositing a dielectric coating, said method comprising: i) providing a system comprising a reactor vessel adapted to contain the semiconductor wafer and an energy source in communication with said reactor vessel for heating the semiconductor wafer contained in said vessel; and ii) subjecting the semiconductor wafer to a first reaction cycle, said first reaction cycle comprising: a) heating the semiconductor wafer to a first deposition temperature with said energy source, wherein said first deposition temperature is greater than about 300° C.; b) supplying to said reactor vessel a first gas precursor for a first deposition time period while the semiconductor wafer is at said first deposition temperature, said first gas precursor having a first gas precursor flow rate; c) supplying to said reactor vessel a first oxidizing gas for a first oxidizing gas time period while the semiconductor wafer is at a first oxidizing gas temperature, said first oxidizing gas having a first oxidizing gas flow rate, wherein at least a partial monolayer of a dielectric is formed during the first reaction cycle; and iii) subjecting the semiconductor wafer to a second reaction cycle, said second reaction cycle comprising: a) supplying to said reactor vessel a second gas precursor for a second deposition time period while the semiconductor wafer is at a second deposition temperature, said second deposition temperature being greater than about 300° C., said second gas precursor having a second gas precursor flow rate; b) supplying to said reactor vessel a second oxidizing gas for a second oxidizing gas time period while the semiconductor wafer is at a second oxidizing gas temperature, said second oxidizing gas having a second oxidizing gas flow rate, wherein at least a partial monolayer of a dielectric is formed during the second reaction cycle; and iv) optionally, subjecting the semiconductor wafer to one or more additional reaction cycles to achieve a target thickness; wherein said first gas precursor, said second gas precursor, or combinations thereof is an organo-silicon compound so that the resulting dielectric coating contains a metal silicate, said metal silicate being selected from the group consisting of zirconium silicate, hafnium silicate, and combinations thereof.

Claim 40

A method for depositing a dielectric coating, said method comprising: i) providing a system comprising a reactor vessel adapted to contain the semiconductor wafer and an energy source in communication with said reactor vessel for heating the semiconductor wafer contained in said vessel; and ii) subjecting the semiconductor wafer to a first reaction cycle, said first reaction cycle comprising: a) heating the semiconductor wafer to a first deposition temperature with said energy source, wherein said first deposition temperature is greater than about 300° C.; b) supplying to said reactor vessel a first gas precursor for a first deposition time period while the semiconductor wafer is at said first deposition temperature, said first gas precursor having a first gas precursor flow rate; c) supplying to said reactor vessel a first oxidizing gas for a first oxidizing gas time period while the semiconductor wafer is at a first oxidizing gas temperature, said first oxidizing gas having a first oxidizing gas flow rate, wherein at least a partial monolayer of a dielectric is formed during the first reaction cycle; and iii) subjecting the semiconductor wafer to a second reaction cycle, said second reaction cycle comprising: a) supplying to said reactor vessel a second gas precursor for a second deposition time period while the semiconductor wafer is at a second deposition temperature, said second deposition temperature being greater than about 300° C., said second gas precursor having a second gas precursor flow rate; b) supplying to said reactor vessel a second oxidizing gas for a second oxidizing gas time period while the semiconductor wafer is at a second oxidizing gas temperature, said second oxidizing gas having a second oxidizing gas flow rate, wherein at least a partial monolayer of a dielectric is formed during the second reaction cycle; and iv) optionally, subjecting the semiconductor wafer to one or more additional reaction cycles to achieve a target thickness; wherein said first gas precursor, said second gas precursor, or combinations thereof is an organo-silicon compound so that the resulting dielectric coating contains a metal silicate, said metal silicate being selected from the group consisting of zirconium silicate, hafnium silicate, and combinations thereof.