US6207583B1
Expired / Lapsed
US
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Photoresist ashing process for organic and inorganic polymer dielectric materials
Assignee: Mattson Technology Inc
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Filing: 1999-09-03
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Granted: 2001-03-27
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Expires: 2019-09-03
Abstract
Abstract A process for removal of photoresist present on a polymer dielectric on a semiconductor substrate and for removal of photoresist residues on the inside walls of microvias formed in the dielectric layer. The process is conducted by generating a plasma in a plasma generator from a gas comprising one or more fluorine compound containing etchant gases and etching the substrate having a dielectric layer thereon, and a photoresist layer on the dielectric layer and on the inside walls of microvias formed in the dielectric layer. The etching is conducted at a temperature of from about 0° C. to about 90° C. and at a pressure of from about 10 torr or less, to thereby remove the photoresist present on the dielectric layer and on the inside walls of the microvias.
Inventors
- 👤 Jude Dunne
- 👤 Joseph Kennedy
- 👤 Leroy Laizhong Luo
- 👤 Diane Cecile Howell
- 👤 Nicole Eliette Charlotte Kuhl
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:33
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/23; H10P70/234; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/427
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
135 words
A process for removing photoresist present on a dielectric layer on a substrate and on the inside walls of microvias or trenches formed in the dielectric layer, the process comprising: introducing a substrate having a dielectric layer thereon, and a photoresist layer on the dielectric layer and on the inside walls of microvias or trenches formed in the dielectric layer into a plasma generator; generating a plasma in the plasma generator from a gas comprising one or more fluorine compound containing etchant gases; and isotropically etching said photoresist layer with the plasma at a temperature of from about 0° C. to about 90° C. and at a pressure of from about 10 torr or less, to thereby remove the photoresist present on the dielectric layer and on the inside walls of the microvias or trenches.
Claim 2
Dependent Claim
135 words
A process for removing photoresist present on a dielectric layer on a substrate and on the inside walls of microvias or trenches formed in the dielectric layer, the process comprising: introducing a substrate having a dielectric layer thereon, and a photoresist layer on the dielectric layer and on the inside walls of microvias or trenches formed in the dielectric layer into a plasma generator; generating a plasma in the plasma generator from a gas comprising one or more fluorine compound containing etchant gases; and isotropically etching said photoresist layer with the plasma at a temperature of from about 0° C. to about 90° C. and at a pressure of from about 10 torr or less, to thereby remove the photoresist present on the dielectric layer and on the inside walls of the microvias or trenches.
Claim 3
Dependent Claim
14 words
The process of claim 1 wherein the dielectric layer comprises a silicon containing polymer.
Claim 4
Dependent Claim
14 words
The process of claim 1 wherein the dielectric layer comprises a spin-on glass material.
Claim 5
Dependent Claim
32 words
The process of claim 1 wherein the dielectric layer comprises an alkoxysilane polymer, a silsesquioxane polymer, a siloxane polymer, an organohydridosiloxane polymer, a poly(arylene ether), a fluorinated poly(arylene ether) or mixtures thereof.
Claim 6
Dependent Claim
61 words
The process of claim 1 wherein the dielectric layer comprises an alkoxysilane polymer formed from an alkoxysilane monomer which has the formula SiR 4 , wherein at least 2 of the R groups are independently C 1 to C 4 alkoxy groups and the balance, if any, are independently selected from the group consisting of hydrogen, alkyl, phenyl, halogen, substituted phenyl.
Claim 7
Dependent Claim
13 words
The process of claim 5 wherein each R is methoxy, ethoxy or propoxy.
Claim 8
Dependent Claim
14 words
The process of claim 1 wherein the dielectric layer comprises an organic dielectric material.
Claim 9
Dependent Claim
79 words
The process of claim 1 wherein the fluorine containing compound comprises C x F y , wherein x is 1-4 and y is either 2x or 2x+2; C x H z F y , wherein x is 1-4, y is either from 1 to 2x+1 or from 1 to 2x−1, and z is 2x+2−y when y ranges from 1 to 2x+1 or 2x−y when y ranges from 1 to 2x−1; NF 3 ; SF 6 ; or mixtures thereof.
Claim 10
Dependent Claim
30 words
The process of claim 1 wherein fluorine compound containing etchant gases comprises a material selected from the group consisting of CF 4 , SF 6 , NF3, and mixtures thereof.
Claim 11
Dependent Claim
36 words
The process of claim 1 wherein said etchant gas further comprises a material selected from the group consisting of O 2 , N 2 , H 2 , ammonia, water vapor, inert gases and mixtures thereof.
Claim 12
Dependent Claim
14 words
The process of claim 1 wherein said fluorine containing compound comprises CF 4 .
Claim 13
Dependent Claim
16 words
The process of claim 1 wherein said etchant gas comprises CF 4 and O 2 .
Claim 14
Dependent Claim
30 words
The process of claim 1 wherein said etchant gas comprises a fluorine containing compound in an amount of from about 0.1% to about 10% by volume of the etchant gas.
Claim 15
Dependent Claim
28 words
The process of claim 1 wherein said etchant gas comprises O 2 in an amount of from about 50% to about 99.9% by volume of the etchant gas.
Claim 16
Dependent Claim
28 words
The process of claim 1 wherein said etchant gas comprises N 2 in an amount of from about 0% to about 95% by volume of the etchant gas.
Claim 17
Dependent Claim
27 words
The process of claim 1 wherein said etchant gas comprises hydrogen in an amount of from about 0% to about 15% by volume of the etchant gas.
Claim 18
Dependent Claim
28 words
The process of claim 1 wherein said etchant gas comprises water vapor in an amount of from about 25% to about 96% by volume of the etchant gas.
Claim 19
Dependent Claim
17 words
The process of claim 1 wherein the temperature ranges from about 10° C. to about 30° C.
Claim 20
Dependent Claim
17 words
The process of claim 1 wherein the pressure ranges from about 0.01 torr to about 10 torr.
Claim 21
Dependent Claim
17 words
The process of claim 1 wherein the pressure ranges from about 0.5 torr to about 5 torr.
Claim 22
Dependent Claim
17 words
The process of claim 1 wherein the pressure ranges from about 0.5 torr to about 1.5 torr.
Claim 23
Dependent Claim
24 words
The process of claim 1 wherein the substrate comprises a material selected from the group consisting of gallium arsenide, silicon, and compositions containing silicon.
Claim 24
Dependent Claim
30 words
The process of claim 22 wherein the substrate comprises a material selected from the group consisting of crystalline silicon, polysilicon, amorphous silicon, epitaxial silicon, and silicon dioxide, and mixtures thereof.
Claim 25
Dependent Claim
16 words
The process of claim 1 wherein the substrate has a pattern of lines on its surface.
Claim 26
Dependent Claim
24 words
The process of claim 1 wherein the substrate has a pattern of lines on its surface wherein the lines comprise a metal or polysilicon.
Claim 27
Dependent Claim
19 words
The process of claim 1 further comprising the subsequent step of contacting the dielectric layer with an organic solvent.
Claim 28
Dependent Claim
12 words
The process of claim 26 wherein the organic solvent comprises an amine.
Claim 29
Dependent Claim
150 words
A process for removing photoresist present on a dielectric layer on a substrate and on the inside walls of microvias or trenches formed in the dielectric layer, the process comprising a first photoresist removal process comprising: introducing a substrate having a dielectric layer thereon, and a photoresist layer on the dielectric layer and on the inside walls of microvias or trenches formed in the dielectric layer into a plasma generator, generating a plasma in the plasma generator from a gas comprising one or more fluorine compound containing etchant gases, and isotropically etching said photoresist layer with the plasma at a temperature of from about 0° C. to about 90° C. and at a pressure of from about 10 torr or less, for a time period to remove a portion of the photoresist present on the dielectric layer; and a second photoresist removal process different from the first photoresist removal process.
Claim 30
Dependent Claim
150 words
A process for removing photoresist present on a dielectric layer on a substrate and on the inside walls of microvias or trenches formed in the dielectric layer, the process comprising a first photoresist removal process comprising: introducing a substrate having a dielectric layer thereon, and a photoresist layer on the dielectric layer and on the inside walls of microvias or trenches formed in the dielectric layer into a plasma generator, generating a plasma in the plasma generator from a gas comprising one or more fluorine compound containing etchant gases, and isotropically etching said photoresist layer with the plasma at a temperature of from about 0° C. to about 90° C. and at a pressure of from about 10 torr or less, for a time period to remove a portion of the photoresist present on the dielectric layer; and a second photoresist removal process different from the first photoresist removal process.
Claim 31
Dependent Claim
20 words
The process of claim 28 wherein the second photoresist removal process comprises contacting the dielectric layer with an organic solvent.
Claim 32
Dependent Claim
30 words
The process of claim 28 wherein the second photoresist removal process comprises etching the dielectric layer with a plasma generated from etchant gases comprising N 2 and H 2 .
Claim 33
Dependent Claim
18 words
The process of claim 28 wherein the time period is from about 3 seconds to about 10 seconds.
Claim 34
Dependent Claim
19 words
The process of claim 28 wherein the first photoresist removal process is performed before the second photoresist removal process.
Claim 35
Dependent Claim
19 words
The process of claim 30 wherein the second photoresist removal process is performed before the first photoresist removal process.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2004-03-26 | 2004-09-25 | 2005-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-26 | 2008-09-25 | 2009-03-27 | $3760.00 | Window Closed / Lapsed |
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