US6093655A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma etching methods
Assignee: Micron Technology Inc
•
Filing: 1998-02-12
•
Granted: 2000-07-25
•
Expires: 2018-02-12
Abstract
Abstract A plasma etching method includes forming polymer material over at least some internal surfaces of a plasma etch chamber and forming polymer material over at least some surfaces of a semiconductor wafer received within the plasma etch chamber. Substantially all polymer material is plasma etched from the chamber internal surfaces while at least some polymer material remains on the wafer. In another aspect, a semiconductor wafer is positioned on a wafer receiver within a plasma etch chamber. A photoresist layer has previously been formed thereon and has openings formed therethrough. First plasma etching is conducted through openings formed in the photoresist layer with a gas comprising carbon and a halogen to form openings in material on the wafer. A first polymer comprising carbon and the halogen forms over at least some internal surfaces of the plasma etch chamber during the first plasma etching. A second polymer is formed over the wafer and relative to the material openings to mask said material within the openings. After forming the first and second polymers and with the wafer in the chamber, substantially all the first polymer from chamber internal surfaces is plasma etched while the second polymer masks the material within the openings.
Inventors
- 👤 Kevin G. Donohoe
- 👤 Richard L. Stocks
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:11
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32798; H01J37/32853; H01J37/32871; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P50/286; H10P50/287
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
60 words
A plasma etching method comprising: forming polymer material over at least some internal surfaces of a plasma etch chamber and forming polymer material over at least some surfaces of a semiconductor wafer received within the plasma etch chamber; and plasma etching substantially all polymer material from the chamber internal surfaces while at least some polymer material remains on the wafer.
Claim 2
Dependent Claim
60 words
A plasma etching method comprising: forming polymer material over at least some internal surfaces of a plasma etch chamber and forming polymer material over at least some surfaces of a semiconductor wafer received within the plasma etch chamber; and plasma etching substantially all polymer material from the chamber internal surfaces while at least some polymer material remains on the wafer.
Claim 3
Dependent Claim
45 words
The plasma etching method of claim 1 wherein all polymer material formed over the internal surfaces has an average first thickness and all polymer material formed over the wafer has an average second thickness, the average second thickness being greater than the average first thickness.
Claim 4
Dependent Claim
47 words
The plasma etching method of claim 1 wherein all polymer material formed over the internal surfaces has an average first thickness and all polymer material formed over the wafer has an average second thickness, the average second thickness being substantially the same as the average first thickness.
Claim 5
Dependent Claim
78 words
A plasma etching method comprising: forming a first polymer over at least some internal surfaces of a plasma etch chamber and forming a second polymer over at least some surfaces of a semiconductor wafer received within the plasma etch chamber; and after forming the first and second polymers and with the wafer in the chamber, plasma etching substantially all the first polymer from chamber internal surfaces while at least some first or second polymer remains on the wafer.
Claim 6
Dependent Claim
78 words
A plasma etching method comprising: forming a first polymer over at least some internal surfaces of a plasma etch chamber and forming a second polymer over at least some surfaces of a semiconductor wafer received within the plasma etch chamber; and after forming the first and second polymers and with the wafer in the chamber, plasma etching substantially all the first polymer from chamber internal surfaces while at least some first or second polymer remains on the wafer.
Claim 7
Dependent Claim
22 words
The plasma etching method of claim 4 wherein at least one of the first and second polymers comprises carbon and a halogen.
Claim 8
Dependent Claim
20 words
The plasma etching method of claim 4 wherein both of the first and second polymers comprises carbon and a halogen.
Claim 9
Dependent Claim
12 words
The plasma etching method of claim 4 wherein both polymers comprise fluorine.
Claim 10
Dependent Claim
32 words
The plasma etching method of claim 4 wherein the first polymer is formed with a fluorine comprising feed gas and the second polymer is not formed with a fluorine comprising feed gas.
Claim 11
Dependent Claim
48 words
The plasma etching method of claim 4 wherein all polymer material formed over the internal surfaces has an average first thickness and all polymer material formed over the wafer has an average second thickness, the average second thickness being greater than or equal to the average first thickness.
Claim 12
Dependent Claim
47 words
The plasma etching method of claim 4 wherein all polymer material formed over the internal surfaces has an average first thickness and all polymer material formed over the wafer has an average second thickness, the average second thickness being substantially the same as the average first thickness.
References Cited (Backward Citations)
US4397724A
Cited
US4513021A
Cited
US4436584A
Cited
US5716494A
Cited
US5593540A
Cited
US5681424A
Cited
US5468686A
Cited
US5873948A
Cited
US5514247A
Cited
US5817578A
Cited
US5950092A
Cited
US5679211A
Cited
US5830279A
Cited
US5644153A
Cited
US5788869A
Cited
US5879575A
Cited
US5756400A
Cited
US5679215A
Cited
US5626775A
Cited
US5843239A
Cited
US5780338A
Cited
US5868853A
Cited
US9141775B2
Cited
US9080656B2
Cited
US9046835B2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-25 | 2004-01-24 | 2004-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-25 | 2008-01-24 | 2008-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-25 | 2012-01-24 | 2012-07-25 | $7700.00 | Window Closed / Lapsed |