US5716494A
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Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate
Assignee: Panasonic Holdings Corp
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Filing: 1994-12-29
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Granted: 1998-02-10
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Expires: 2014-12-29
Abstract
Abstract In performing plasma etching or plasma CVD, a gas containing an interhalogen compound gas or a XeF2 gas is used as a process gas. Such a process gas generates, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in the above etching so as to contribute to the suppression of film formation. For example, the XeF2 gas, a BrF3 gas, a BrCl gas are used in the cases of etching a silicon dioxide film, a silicide film, and a polysilicon film, respectively. On the surface of a substrate is formed a non-volatile protective film so as to improve the profiles of an opening. At the wall surface of a reaction chamber which is barely influenced by the plasma, the deposition species is turned into a volatile material (e.g., SiF4) so as to suppress the deposition of reaction products thereon. If the interhalogen compound gas, XeF2 gas, or the like is added to a main gas for performing CVD, the same effects can be achieved.
Inventors
- 👤 Shinichi Imai
- 👤 Tokuhiko Tamaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:25
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P14/00; H10P14/60; H10P14/61; H10P50/267; H10P50/268; H10P50/28; H10P50/282; H10P50/283; H10P50/60; H10P50/64; H10P50/642
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
160 words
A dry etching method comprising the steps of: disposing in a reaction chamber a semiconductor substrate including a film; introducing into the reaction chamber a process gas comprising a gas with the function of anisotropic etching, said process gas comprising at least an interhalogen compound gas and a carbon fluoride gas, and at least either of a XeF 2 gas and a diluted F 2 gas, said process gas exerting, in the state of plasma, the effects of etching said film and depositing reaction products on the wall surface of an opening formed by etching, while generating, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in said etching so as to contribute to the suppression of film formation; and removing at least a part of said film by turning the process gas into a plasma in the vicinity of the semiconductor substrate in said reaction chamber.
Claim 2
Dependent Claim
160 words
A dry etching method comprising the steps of: disposing in a reaction chamber a semiconductor substrate including a film; introducing into the reaction chamber a process gas comprising a gas with the function of anisotropic etching, said process gas comprising at least an interhalogen compound gas and a carbon fluoride gas, and at least either of a XeF 2 gas and a diluted F 2 gas, said process gas exerting, in the state of plasma, the effects of etching said film and depositing reaction products on the wall surface of an opening formed by etching, while generating, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in said etching so as to contribute to the suppression of film formation; and removing at least a part of said film by turning the process gas into a plasma in the vicinity of the semiconductor substrate in said reaction chamber.
Claim 3
Dependent Claim
55 words
A dry etching method according to claim 1, wherein a ClF 3 gas is used as said interhalogen compound gas and at least one of a CHF 3 gas, a CH 2 F 2 gas, a C 3 F 6 gas, and a C 4 F 8 gas is used as said carbon fluoride gas.
Claim 4
Dependent Claim
30 words
A dry etching method according to claim 1, wherein an inert gas in addition to the carbon fluoride gas and the interhalogen compound gas is mixed into said process gas.
Claim 5
Dependent Claim
46 words
A dry etching method according to claim 1, wherein the supply of the process gas is halted immediately before said process of removing the film is completed and then the process of removing the film is continued by turning the carbon fluoride gas into a plasma.
Claim 6
Dependent Claim
31 words
A dry etching method according to claim 1, wherein the amount of the interhalogen compound gas being supplied is gradually decreased as said process of removing the film approaches the completion.
Claim 7
Dependent Claim
38 words
A dry etching method according to claim 1, wherein the generation of the plasma is halted after said process of removing the film is completed so that at least the interhalogen compound gas remains in the reaction chamber.
Claim 8
Dependent Claim
89 words
A dry etching method comprising the steps of: disposing in a reaction chamber a semiconductor substrate formed with an insulating film comprising a silicon element as its component; introducing into the reaction chamber a process gas comprising containing a carbon-containing gas and at least either of a XeF 2 gas and a diluted F 2 gas; and selectively removing at least a part of said insulating film on the semiconductor substrate by turning the process gas into a plasma in the vicinity of the substrate in said reaction chamber.
Claim 9
Dependent Claim
89 words
A dry etching method comprising the steps of: disposing in a reaction chamber a semiconductor substrate formed with an insulating film comprising a silicon element as its component; introducing into the reaction chamber a process gas comprising containing a carbon-containing gas and at least either of a XeF 2 gas and a diluted F 2 gas; and selectively removing at least a part of said insulating film on the semiconductor substrate by turning the process gas into a plasma in the vicinity of the substrate in said reaction chamber.
Claim 10
Dependent Claim
21 words
A dry etching method according to claim 7, wherein the diluted F 2 gas is diluted with a NF 3 gas.
Claim 11
Dependent Claim
42 words
A dry etching method according to claim 7, wherein the carbon-containing gas is at least one of a CHF 3 gas, a CH 2 F 2 gas, a CH 3 F gas, a CH 4 +H 2 gas, or a mixture thereof.
Claim 12
Dependent Claim
22 words
A dry etching method according to claim 7, wherein the process gas contains a F 2 gas and a O 2 gas.
Claim 13
Dependent Claim
26 words
A dry etching method according to claim 7, wherein the insulating film is at least one of a silicon oxide film or a silicon nitride film.
Claim 14
Dependent Claim
167 words
A dry etching method comprising the steps of: disposing in a reaction chamber a semiconductor substrate including a polysilicon film; introducing into the reaction chamber a process gas comprising a gas with the function of anisotropic etching, said process gas comprising at least an interhalogen compound gas which includes at least a BrCl gas, said process gas further comprising at least either of a XeF 2 gas and a diluted F 2 gas said process gas exerting, in the state of plasma, the effects of etching said film and depositing reaction products on the wall surface of an opening formed by etching, while generating, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in said etching so as to contribute to the suppression of film formation; and removing at least a part of said film by turning the process gas into a plasma in the vicinity of the semiconductor substrate in said reaction chamber.
Claim 15
Dependent Claim
167 words
A dry etching method comprising the steps of: disposing in a reaction chamber a semiconductor substrate including a polysilicon film; introducing into the reaction chamber a process gas comprising a gas with the function of anisotropic etching, said process gas comprising at least an interhalogen compound gas which includes at least a BrCl gas, said process gas further comprising at least either of a XeF 2 gas and a diluted F 2 gas said process gas exerting, in the state of plasma, the effects of etching said film and depositing reaction products on the wall surface of an opening formed by etching, while generating, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in said etching so as to contribute to the suppression of film formation; and removing at least a part of said film by turning the process gas into a plasma in the vicinity of the semiconductor substrate in said reaction chamber.
Claim 16
Dependent Claim
171 words
A dry etching method comprising the steps of: disposing in a reaction chamber a semiconductor substrate including a metal film comprising Al as its main component; introducing into the reaction chamber a process gas comprising a gas with the function of anisotropic etching, said process gas comprising at least an interhalogen compound gas which is a BrCl gas, said process gas further comprising at least either of a XeF 2 gas and a diluted F 2 gas, said process gas exerting, in the state of plasma, the effects of etching said film and depositing reaction products on the wall surface of an opening formed by etching, while generating, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in said etching so as to contribute to the suppression of film formation; and removing at least a part of said film by turning the process gas into a plasma in the vicinity of the semiconductor substrate in said reaction chamber.
Claim 17
Dependent Claim
171 words
A dry etching method comprising the steps of: disposing in a reaction chamber a semiconductor substrate including a metal film comprising Al as its main component; introducing into the reaction chamber a process gas comprising a gas with the function of anisotropic etching, said process gas comprising at least an interhalogen compound gas which is a BrCl gas, said process gas further comprising at least either of a XeF 2 gas and a diluted F 2 gas, said process gas exerting, in the state of plasma, the effects of etching said film and depositing reaction products on the wall surface of an opening formed by etching, while generating, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in said etching so as to contribute to the suppression of film formation; and removing at least a part of said film by turning the process gas into a plasma in the vicinity of the semiconductor substrate in said reaction chamber.
Claim 18
Dependent Claim
175 words
A dry etching method comprising the steps of: disposing in a reaction chamber a semiconductor substrate including a silicide film; introducing into the reaction chamber a process gas comprising a gas with the function of anisotropic etching, said process gas comprising at least an interhalogen compound gas which is at least either of a BrF 3 gas and a BrF 5 gas, said process gas further comprising at least either of a XeF 2 gas and a diluted F 2 gas, said process gas exerting, in the state of plasma, the effects of etching said film and depositing reaction products on the wall surface of an opening formed by etching, while generating, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in said etching so as to contribute to the suppression of film formation; and removing at least a part of said film by turning the process gas into a plasma in the vicinity of the semiconductor substrate in said reaction chamber.
Claim 19
Dependent Claim
175 words
A dry etching method comprising the steps of: disposing in a reaction chamber a semiconductor substrate including a silicide film; introducing into the reaction chamber a process gas comprising a gas with the function of anisotropic etching, said process gas comprising at least an interhalogen compound gas which is at least either of a BrF 3 gas and a BrF 5 gas, said process gas further comprising at least either of a XeF 2 gas and a diluted F 2 gas, said process gas exerting, in the state of plasma, the effects of etching said film and depositing reaction products on the wall surface of an opening formed by etching, while generating, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in said etching so as to contribute to the suppression of film formation; and removing at least a part of said film by turning the process gas into a plasma in the vicinity of the semiconductor substrate in said reaction chamber.
References Cited (Backward Citations)
US4314875A
Cited
US4529476A
Cited
JPS60165724A
Cited
US4741797A
Cited
US4687543A
Cited
US4997778A
Cited
JPH02151031A
Cited
US5098638A
Cited
US5076877A
Cited
US5078833A
Cited
US5180464A
Cited
US5401359A
Cited
US5296095A
Cited
US5318668A
Cited
US5376234A
Cited
US5397431A
Cited
US5423941A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-02-09 | 2001-08-11 | 2002-02-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-02-09 | 2005-08-11 | 2006-02-10 | $3760.00 | Window Closed / Lapsed |
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