Abstract The invention provides an improved dry etching method for selectively etching a silicon nitride layer 3 formed on the surface of a SiO2 layer 2 formed on a p-type semiconductor substrate, the method comprising the steps of supplying a mixed gas of HBr and ClF3 to a reaction chamber wherein SiBr4, caused, during the dry etching, by a reaction of the silicon nitride layer 3 and the HBr contained in the mixed gas, partly deposits on an etching wall of the p-type semiconductor substrate 1 while at the same time an excess of the SiBr4 reacts, between the p-type semiconductor substrate 1 and a wall of the reaction chamber, with the ClF3 contained in the mixed gas to produce a fluoride. The fluoride thus produced can be easily discharged to the outside, since it is more volatile.
A dry etching method for dry etching a silicon nitride layer formed on the surface of a semiconductor substrate placed in a reaction chamber comprising the steps of: supplying a mixed gas of HBr and ClF 3 to the reaction chamber for dry etching the silicon nitride layer whereby a part of SiBr 4 , produced during the dry etching by a reaction of the silicon nitride layer and the HBr contained in the mixed gas, deposits on an etching wall of the semiconductor substrate while at the same time an excess of the SiBr 4 reacts, between the semiconductor substrate and a wall of the reaction chamber, with the ClF 3 contained in the mixed gas to produce a fluoride, and discharging the fluoride thus produced from the reaction chamber to the outside thereof so as to prevent deposits of SiBr 4 from forming on the wall of the reaction chamber.
Claim 2
Dependent Claim
152 words
A dry etching method for dry etching a silicon nitride layer formed on the surface of a semiconductor substrate placed in a reaction chamber comprising the steps of: supplying a mixed gas of HBr and ClF 3 to the reaction chamber for dry etching the silicon nitride layer whereby a part of SiBr 4 , produced during the dry etching by a reaction of the silicon nitride layer and the HBr contained in the mixed gas, deposits on an etching wall of the semiconductor substrate while at the same time an excess of the SiBr 4 reacts, between the semiconductor substrate and a wall of the reaction chamber, with the ClF 3 contained in the mixed gas to produce a fluoride, and discharging the fluoride thus produced from the reaction chamber to the outside thereof so as to prevent deposits of SiBr 4 from forming on the wall of the reaction chamber.
Claim 3
Dependent Claim
24 words
The dry etching method of claim 1, wherein the silicon nitride layer is formed on a silicon oxide layer formed on the semiconductor substrate.
Claim 4
Dependent Claim
24 words
The dry etching method of claim 1, wherein the ratio of the HBr and the ClF 3 in the mixed gas is about 1:1.
Claim 5
Dependent Claim
24 words
The dry etching method of claim 2, wherein the ratio of the HBr and the ClF 3 in the mixed gas is about 1:1.