US5078833A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dry etching method
Assignee: Sony Corp
•
Filing: 1990-07-20
•
Granted: 1992-01-07
•
Expires: 2010-07-20
Abstract
Abstract A dry etching process utilizes a gas to form a side wall protecting layer, which gas has added at least chlorine trifluoride, or in the alternative silicon and fluorine as component.
Inventors
- 👤 Shingo Kadomura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 00:23
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/69; H10P50/691; H10P50/693; H10P50/694
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
58 words
A composite gas for dry etching for forming a desired configuration of trench in a monocrystalline silicon, composed of: a base composite gas for etching the monocrystalline silicon; and an additive gas added to said base composite gas, said additive gas containing at least Cl F 3 for forming protective layer on the side wall of said trench.
Claim 2
Dependent Claim
58 words
A composite gas for dry etching for forming a desired configuration of trench in a monocrystalline silicon, composed of: a base composite gas for etching the monocrystalline silicon; and an additive gas added to said base composite gas, said additive gas containing at least Cl F 3 for forming protective layer on the side wall of said trench.
Claim 3
Dependent Claim
51 words
A composite gas as set forth in claim 1, wherein said base composite gas is selected among SiCl 4 /N 2 type gas, Cl 2 /N 2 type gas, Cl 2 /O 2 type gas, Br 2 /N 2 type gas, HBr/N 2 type gas, SiCl 4 /O 2 type gas.
Claim 4
Dependent Claim
27 words
A composite gas as set forth in claim 1, wherein said additive gas is added to the base composite gas in a range of 1 to 90%.
Claim 5
Dependent Claim
94 words
A dry etching process for forming a trench in a monocrystalline silicon, comprising the steps of: forming an opening in SiO 2 layer formed on a monocrystalline silicon according to a desired etching pattern; performing etching with utilizing residual SiO 2 layer as a masking layer and with an etching gas, which is composed of: a base composite gas for etching the monocrystalline silicon; and an additive gas added to said base composite gas, said additive gas containing at least Cl F 3 for forming protective layer on the side wall of said trench.
Claim 6
Dependent Claim
94 words
A dry etching process for forming a trench in a monocrystalline silicon, comprising the steps of: forming an opening in SiO 2 layer formed on a monocrystalline silicon according to a desired etching pattern; performing etching with utilizing residual SiO 2 layer as a masking layer and with an etching gas, which is composed of: a base composite gas for etching the monocrystalline silicon; and an additive gas added to said base composite gas, said additive gas containing at least Cl F 3 for forming protective layer on the side wall of said trench.
Claim 7
Dependent Claim
52 words
A dry etching process as set forth in claim 4, wherein said base composite gas is selected among SiCl 4 /N 2 type gas, Cl 2 /N 2 type gas, Cl 2 /O 2 type gas, Br 2 /N 2 type gas, HBr/N 2 type gas, SiCl 4 /O 2 type gas.
Claim 8
Dependent Claim
28 words
A dry etching process as set forth in claim 4, wherein said additive gas is added to the base composite gas in a range of 1 to 90%.
References Cited (Backward Citations)
EP0036144A1
Cited
WO1981002947A1
Cited
WO1985002818A1
Cited
US4690729A
Cited
US4784720A
Cited
US4855017A
Cited
US4885054A
Cited
EP0272143A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-06 | 1995-07-08 | 1996-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-06 | 1999-07-08 | 2000-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-06 | 2003-07-08 | 2004-01-07 | $7700.00 | Window Closed / Lapsed |