US5468686A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of cleaning an etching chamber of a dry etching system
Assignee: NEC Electronics Corp
•
Filing: 1994-11-30
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Granted: 1995-11-21
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Expires: 2014-11-30
Abstract
Abstract In a dry etching system, a method of cleaning an etching chamber allows a series of steps of introducing a wafer, selectively dry-etching an aluminum film provided on the wafer, cleaning the etching chamber by etching gas containing oxygen gas and capable of removing remaining chlorine, and ashing resist to be executed continuously with each of consecutive wafers without exposing them to the atmosphere. The etching and cleaning steps are completed within a period of time necessary for the ashing step. This not only protects the resulting aluminum wirings on the wafers from corrosion but also saves time otherwise consumed by the cleaning step, thereby increasing the throughput of the system.
Inventors
- 👤 Hiedaki Kawamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 00:02
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32798; H01J37/32853; H01J37/32862; H10; H10P; H10P50/00; H10P50/71; Y; Y10; Y10S; Y10S438/00; Y10S438/905
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
129 words
A method of cleaning an etching chamber of a dry etching system having said etching chamber in which a single semiconductor substrate is disposed and etched, and at least one auxiliary chamber communicated to said etching chamber via a gate valve and capable of accommodating said semiconductor substrate, said method comprising the steps of: (a) introducing halogen gas into said etching chamber to etch a single semiconductor substrate by plasma, said semiconductor substrate having an aluminum film and a resist film provided on said aluminum film in a desired pattern; (b) replacing, while leaving said semiconductor substrate in said etching chamber, said halogen gas with cleaning gas containing oxygen gas and capable of removing remaining chlorine to thereby generate plasma; and (c) effecting dry etching in said etching chamber.
Claim 2
Independent Claim
129 words
A method of cleaning an etching chamber of a dry etching system having said etching chamber in which a single semiconductor substrate is disposed and etched, and at least one auxiliary chamber communicated to said etching chamber via a gate valve and capable of accommodating said semiconductor substrate, said method comprising the steps of: (a) introducing halogen gas into said etching chamber to etch a single semiconductor substrate by plasma, said semiconductor substrate having an aluminum film and a resist film provided on said aluminum film in a desired pattern; (b) replacing, while leaving said semiconductor substrate in said etching chamber, said halogen gas with cleaning gas containing oxygen gas and capable of removing remaining chlorine to thereby generate plasma; and (c) effecting dry etching in said etching chamber.
Claim 3
Dependent Claim
52 words
A method as claimed in claim 1, further comprising: (d) transferring said semiconductor substrate undergone etching and carrying said resist thereon to said auxiliary chamber and removing said resist by plasma ashing; and (e) effecting dry etching in said etching chamber while said plasma ashing is under way in said auxiliary chamber.
Claim 4
Dependent Claim
17 words
A method as claimed in claim 1, wherein said cleaning gas comprises ammonia gas or methanol gas.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-11-20 | 1999-05-22 | 1999-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-11-20 | 2003-05-22 | 2003-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-11-20 | 2007-05-22 | 2007-11-21 | $7700.00 | Window Closed / Lapsed |