← Back to Patent Explorer
US5399236A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for manufacturing a semiconductor device

Assignee: SK Hynix Inc
•
Filing: 1993-07-06
•
Granted: 1995-03-21
•
Expires: 2013-07-06
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A method for manufacturing a semiconductor device including the steps of forming a photoresist pattern on a metal layer and forming a wiring by etching a metal composed of aluminum or aluminum alloy with plasma including chlorine and eliminating said photoresist pattern while simultaneously eliminating residual chlorine on the wiring by adding alkyl ketone or alkyl ether in an oxygen plasma ash chamber. The present invention can provide a method for manufacturing a semiconductor device, which can eliminate residual chlorine and a photoresist pattern by adding alkyl ketone or alkyl ether so that wiring corrosion may be prevented.

Inventors

  • 👤 Jae H. Ha
  • 👤 Hee K. Park

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 19:16
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273; C; C23; C23F; C23F4/00; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10W; H10W20/00; H10W20/01; H10W20/031

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 58 words
A method for manufacturing a semiconductor device comprising the steps of: forming a photoresist pattern on a metal layer comprising one of aluminum and aluminum alloy; forming wiring by etching said metal layer with plasma including chlorine; and removing said photoresist pattern and residual chlorine on said wiring by adding alkyl ketone in an oxygen plasma ash chamber.
Claim 2
Independent Claim 58 words
A method for manufacturing a semiconductor device comprising the steps of: forming a photoresist pattern on a metal layer comprising one of aluminum and aluminum alloy; forming wiring by etching said metal layer with plasma including chlorine; and removing said photoresist pattern and residual chlorine on said wiring by adding alkyl ketone in an oxygen plasma ash chamber.
Claim 3
Independent Claim 42 words
A method according to 1, wherein an alkyl radical of said alkyl ketone added in said oxygen plasma ash chamber is one of CH 3 , C 2 H 5 , C 3 H 7 , and C 2 H 6 .
Claim 4
Independent Claim 42 words
A method according to 1, wherein an alkyl radical of said alkyl ketone added in said oxygen plasma ash chamber is one of CH 3 , C 2 H 5 , C 3 H 7 , and C 2 H 6 .
Claim 5
Independent Claim 57 words
A method for manufacturing a semiconductor device comprising the steps of: forming photoresist pattern on a metal layer comprising one of aluminum and aluminum alloy; forming wiring by etching said metal layer with plasma including chlorine; and removing said photoresist pattern and residual chlorine on said wiring by adding alkyl ether in an oxygen plasma ash chamber.
Claim 6
Independent Claim 57 words
A method for manufacturing a semiconductor device comprising the steps of: forming photoresist pattern on a metal layer comprising one of aluminum and aluminum alloy; forming wiring by etching said metal layer with plasma including chlorine; and removing said photoresist pattern and residual chlorine on said wiring by adding alkyl ether in an oxygen plasma ash chamber.
Claim 7
Independent Claim 42 words
A method according to 3, wherein an alkyl radical of said alkyl ether added in said oxygen plasma ash chamber is one of CH 3 , C 2 H 5 , C 3 H 7 , and C 2 H 6 .
Claim 8
Independent Claim 42 words
A method according to 3, wherein an alkyl radical of said alkyl ether added in said oxygen plasma ash chamber is one of CH 3 , C 2 H 5 , C 3 H 7 , and C 2 H 6 .

References Cited (Backward Citations)

US4372807A Cited
US4581101A Cited
US5068007A Cited
US5246888A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-03-20 1998-09-19 1999-03-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-03-20 2002-09-19 2003-03-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-03-20 2006-09-19 2007-03-21 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag