US5068007A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Etching of materials in a noncorrosive environment
Assignee: Motorola Solutions Inc
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Filing: 1990-09-24
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Granted: 1991-11-26
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Expires: 2010-09-24
Abstract
Abstract A method for plasma etching semiconducting composed of III-V and related materials is provided. Enhanced removal rates, greater volatility, and reduced etch initiation time is provided by exposing the semiconductor to a plasma of methane, hydrogen, and at least one of trialkylboron, trimethylboron, or triethylboron.
Inventors
- 👤 Stephen P. Rogers
- 👤 Michael S. Lebby
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 00:58
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P90/00; H10P90/12; H10P90/126; H10P50/246
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
33 words
A method for plasma etching semiconductor substrates comprising the steps of: mounting the semiconductor substrate in a plasma reactor; and exposing the semiconductor substrate to a gas plasma comprising methane, hydrogen, and trialkylboron.
Claim 2
Independent Claim
33 words
A method for plasma etching semiconductor substrates comprising the steps of: mounting the semiconductor substrate in a plasma reactor; and exposing the semiconductor substrate to a gas plasma comprising methane, hydrogen, and trialkylboron.
Claim 3
Dependent Claim
29 words
The method of claim 1 further including plasma etching substrates gallium arsenide, indium phosphide, aluminum gallium arsenide, indium gallium aluminum arsenide, and indium gallium aluminum phosphide, and gallium phosphide.
Claim 4
Dependent Claim
13 words
The method of claim 1 further including substituting trimethylboron or triethylboron for trialkylboron.
Claim 5
Dependent Claim
22 words
The method of claim 1 further including etching a metal on the semiconductor substrates that is composed of aluminum or its alloys.
Claim 6
Dependent Claim
17 words
The method of claim 1 further including generating the gas plasma in a reactive ion etch system.
Claim 7
Dependent Claim
27 words
The method of claim 1 further including maintaining the semiconductor wafer substrate within a temperature range between -100 degrees Celsius and +500 degrees Celsius for plasma etching.
Claim 8
Dependent Claim
22 words
The method of claim 5 further including adjusting the semiconductor wafer substrate temperature substantially to 50 degrees Celsius during the plasma etching.
Claim 9
Dependent Claim
26 words
The method of claim 1 further including maintaining a plasma pressure in a reactor in a range of 1 millitorr to 200 millitorr for plasma etching.
Claim 10
Dependent Claim
21 words
The method of claim 8 further including adjusting the pressure of the reactor substantially to 60 millitorr for the plasma etching.
Claim 11
Dependent Claim
39 words
The method of claim 1 further including maintaining a percent by volume of gases comprising of 1 to 10 percent methane, 1 to 90 percent hydrogen, 1 to 50 percent of at least one of trialkylboron, trimethylboron, or triethylboron.
Claim 12
Independent Claim
44 words
A method for enhancing etch rates of a semiconductor substrate in a plasma reactor comprising: placing the semiconductor substrate in the plasma reactor; flowing a gas mixture having methane, hydrogen, and trialkylboron into the plasma reactor; and generating a plasma with said gas mixture.
Claim 13
Independent Claim
44 words
A method for enhancing etch rates of a semiconductor substrate in a plasma reactor comprising: placing the semiconductor substrate in the plasma reactor; flowing a gas mixture having methane, hydrogen, and trialkylboron into the plasma reactor; and generating a plasma with said gas mixture.
Claim 14
Dependent Claim
13 words
The method of claim 11 further including substituting trimethylboron or triethylboron for trialkylboron.
Claim 15
Independent Claim
46 words
A method for removal of oxygen and water vapor from a semiconductor substrate and surfaces contained inside a plasma reactor comprising: providing at least one of trialkylboron, trimethylboron, or triethylboron gas to a plasma gas mixture in the reactor; and generating a plasma in the reactor.
Claim 16
Independent Claim
46 words
A method for removal of oxygen and water vapor from a semiconductor substrate and surfaces contained inside a plasma reactor comprising: providing at least one of trialkylboron, trimethylboron, or triethylboron gas to a plasma gas mixture in the reactor; and generating a plasma in the reactor.
Claim 17
Independent Claim
57 words
A method for enhancing the volatility of etch products from metal or metalloid containing semiconductor substrates comprising: placing the metal or metalloid containing semiconductor substrate in a plasma reactor; generating a plasma comprised of methane, hydrogen, and at least one of trialkylboron, trimethylboron, or triethylboron; and exposing the metal or metalloid containing semiconductor substrate to said plasma.
Claim 18
Independent Claim
57 words
A method for enhancing the volatility of etch products from metal or metalloid containing semiconductor substrates comprising: placing the metal or metalloid containing semiconductor substrate in a plasma reactor; generating a plasma comprised of methane, hydrogen, and at least one of trialkylboron, trimethylboron, or triethylboron; and exposing the metal or metalloid containing semiconductor substrate to said plasma.
Claim 19
Dependent Claim
14 words
The method of claim 14 further including etching semiconductor substrates of III-V compound materials.
Claim 20
Dependent Claim
22 words
The method of claim 14 further including etching a metal on the semiconductor substrates that is composed of aluminum or its alloys.
References Cited (Backward Citations)
US4671847A
Cited
US4925813A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-11-25 | 1995-05-27 | 1995-11-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-25 | 1999-05-27 | 1999-11-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-25 | 2003-05-27 | 2003-11-26 | $7700.00 | Window Closed / Lapsed |