US6436796B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Systems and methods for epitaxial processing of a semiconductor substrate
Assignee: Beijing E Town Semiconductor Technology Co Ltd
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Filing: 2000-01-31
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Granted: 2002-08-20
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Expires: 2020-01-31
Abstract
Abstract A thermal processing system and method for processing a semiconductor substrate. An inductor couples energy to a susceptor, wherein the spacing between the inductor and the susceptor is configured for the steady-state portions of a CVD epitaxial deposition process. The temperature uniformity of the susceptor is improved during the transient portions of the process, the heat ramp-up and cool down, by varying the distance of separation between the inductor and the susceptor. Temperature non-uniformities are a common cause of slip. Additional aspects of the invention provide for improved thermal shielding of the edges and top surface of the susceptor. Thicker susceptors also improve temperature uniformity.
Inventors
- 👤 Robert D. Mailho
- 👤 Mark J. O'Hara
- 👤 Glenn A. Pfefferkorn
- 👤 Gary Lee Evans
- 👤 Kristian E. Johnsgard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:12
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0436; C; C23; C23C; C23C16/00; C23C16/44; C23C16/46; C30; C30B; C30B25/00; C30B25/02; C30B25/10; H10P72/70; H10P72/76; H10P72/7604; H10P72/7616; H10P72/7618
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
73 words
A method of processing a semiconductor substrate, the method comprising the steps of: positioning the substrate adjacent to a susceptor; inductively coupling energy from an inductor to the susceptor to heat the susceptor; injecting a gas into the chamber; varying the distance of separation between the inductor and the susceptor; thermally shielding the edges of the susceptor using an inner and an outer shield; and depositing a layer of material on the substrate.
Claim 2
Independent Claim
73 words
A method of processing a semiconductor substrate, the method comprising the steps of: positioning the substrate adjacent to a susceptor; inductively coupling energy from an inductor to the susceptor to heat the susceptor; injecting a gas into the chamber; varying the distance of separation between the inductor and the susceptor; thermally shielding the edges of the susceptor using an inner and an outer shield; and depositing a layer of material on the substrate.
Claim 3
Dependent Claim
13 words
The method of claim 1 , wherein the inductor is an induction coil.
Claim 4
Dependent Claim
14 words
The method of claim 1 , further comprising the step of rotating the susceptor.
Claim 5
Dependent Claim
14 words
The method of claim 1 , wherein the susceptor is silicon carbide coated graphite.
Claim 6
Dependent Claim
25 words
The method of claim 1 , further comprising the step of varying the distance of separation between the inductor and the susceptor after processing ends.
Claim 7
Dependent Claim
27 words
The method of claim 1 , wherein the step that varies the distance of separation between the inductor and the susceptor is accomplished by moving the susceptor.
Claim 8
Dependent Claim
30 words
The method of claim 1 , wherein the step that varies the distance of separation between the inductor and the susceptor is accomplished by adjusting the height of coil studs.
Claim 9
Dependent Claim
34 words
The method of claim 1 , wherein the step that varies the distance of separation between the inductor and the susceptor is accomplished by moving a mounting plate to which the inductor is attached.
Claim 10
Dependent Claim
24 words
The method of claim 1 , further comprising the step of adjusting the distance of separation between the inductor and the susceptor during processing.
Claim 11
Dependent Claim
26 words
The method of claim 1 , further comprising the step of thermally shielding the top surface of the susceptor in the regions where substrates are absent.
Claim 12
Dependent Claim
28 words
The method of claim 10 , wherein the step of thermally shielding the top surface of the susceptor comprises using a shield resting in spaces between substrate pockets.
Claim 13
Dependent Claim
31 words
The method of claim 10 , wherein the step of thermally shielding the top surface of the susceptor comprises using a shield registered to fit into matching pockets on the susceptor.
Claim 14
Dependent Claim
18 words
The method of claim 1 , wherein the susceptor has a thickness of between 0.9 and 1.5 inches.
Claim 15
Independent Claim
83 words
A method of processing a semiconductor substrate, the method comprising the steps of: positioning the substrate adjacent to a susceptor; inductively coupling energy from an inductor to the susceptor to heat the susceptor; injecting a gas into the chamber; varying the distance of separation between the inductor and the susceptor; thermally shielding the top surface of the susceptor in the regions where substrates are absent using a shield resting in spaces between substrate pockets; and depositing a layer of material on the substrate.
Claim 16
Independent Claim
83 words
A method of processing a semiconductor substrate, the method comprising the steps of: positioning the substrate adjacent to a susceptor; inductively coupling energy from an inductor to the susceptor to heat the susceptor; injecting a gas into the chamber; varying the distance of separation between the inductor and the susceptor; thermally shielding the top surface of the susceptor in the regions where substrates are absent using a shield resting in spaces between substrate pockets; and depositing a layer of material on the substrate.
Claim 17
Dependent Claim
13 words
The method of claim 14 , wherein the inductor is an induction coil.
Claim 18
Dependent Claim
14 words
The method of claim 14 , further comprising the step of rotating the susceptor.
Claim 19
Dependent Claim
18 words
The method of claim 14 , further comprising the step of thermally shielding the edges of the susceptor.
Claim 20
Dependent Claim
25 words
The method of claim 17 , wherein the step of thermally shielding the edges of the susceptor comprises using an inner and an outer shield.
Claim 21
Dependent Claim
30 words
The method of claim 17 , wherein the step of thermally shielding the edges of the susceptor comprises using a shield that is split into inner and outer vertical portions.
Claim 22
Dependent Claim
23 words
The method of claim 17 , wherein the step of thermally shielding the edges of the susceptor comprises using a bottom radial shield.
Claim 23
Dependent Claim
14 words
The method of claim 14 , wherein the susceptor is silicon carbide coated graphite.
Claim 24
Dependent Claim
25 words
The method of claim 14 , further comprising the step of varying the distance of separation between the inductor and the susceptor after processing ends.
Claim 25
Dependent Claim
27 words
The method of claim 14 , wherein the step that varies the distance of separation between the inductor and the susceptor is accomplished by moving the susceptor.
Claim 26
Dependent Claim
30 words
The method of claim 14 , wherein the step that varies the distance of separation between the inductor and the susceptor is accomplished by adjusting the height of coil studs.
Claim 27
Dependent Claim
34 words
The method of claim 14 , wherein the step that varies the distance of separation between the inductor and the susceptor is accomplished by moving a mounting plate to which the inductor is attached.
Claim 28
Dependent Claim
24 words
The method of claim 14 , further comprising the step of adjusting the distance of separation between the inductor and the susceptor during processing.
Claim 29
Dependent Claim
18 words
The method of claim 14 , wherein the susceptor has a thickness of between 0.9 and 1.5 inches.
Claim 30
Independent Claim
78 words
A method of processing a semiconductor substrate, the method comprising the steps of: positioning the substrate adjacent to a susceptor; inductively coupling energy from an inductor to the susceptor to heat the susceptor; injecting a gas into the chamber; varying the distance of separation between the inductor and the susceptor; thermally shielding the edges of the susceptor using a shield that is split into inner and outer vertical portions; and depositing a layer of material on the substrate.
Claim 31
Independent Claim
78 words
A method of processing a semiconductor substrate, the method comprising the steps of: positioning the substrate adjacent to a susceptor; inductively coupling energy from an inductor to the susceptor to heat the susceptor; injecting a gas into the chamber; varying the distance of separation between the inductor and the susceptor; thermally shielding the edges of the susceptor using a shield that is split into inner and outer vertical portions; and depositing a layer of material on the substrate.
Claim 32
Independent Claim
71 words
A method of processing a semiconductor substrate, the method comprising the steps of: positioning the substrate adjacent to a susceptor; inductively coupling energy from an inductor to the susceptor to heat the susceptor; injecting a gas into the chamber; varying the distance of separation between the inductor and the susceptor; thermally shielding the edges of the susceptor using a bottom radial shield; and depositing a layer of material on the substrate.
Claim 33
Independent Claim
71 words
A method of processing a semiconductor substrate, the method comprising the steps of: positioning the substrate adjacent to a susceptor; inductively coupling energy from an inductor to the susceptor to heat the susceptor; injecting a gas into the chamber; varying the distance of separation between the inductor and the susceptor; thermally shielding the edges of the susceptor using a bottom radial shield; and depositing a layer of material on the substrate.
Claim 34
Independent Claim
86 words
A method of processing a semiconductor substrate, the method comprising the steps of: positioning the substrate adjacent to a susceptor; inductively coupling energy from an inductor to the susceptor to heat the susceptor; injecting a gas into the chamber; varying the distance of separation between the inductor and the susceptor; thermally shielding the top surface of the susceptor in the regions where substrates are absent using a shield registered to fit into matching pockets on the susceptor; and depositing a layer of material on the substrate.
Claim 35
Independent Claim
86 words
A method of processing a semiconductor substrate, the method comprising the steps of: positioning the substrate adjacent to a susceptor; inductively coupling energy from an inductor to the susceptor to heat the susceptor; injecting a gas into the chamber; varying the distance of separation between the inductor and the susceptor; thermally shielding the top surface of the susceptor in the regions where substrates are absent using a shield registered to fit into matching pockets on the susceptor; and depositing a layer of material on the substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-08-19 | 2006-02-18 | 2006-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-08-19 | 2010-02-18 | 2010-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-08-19 | 2014-02-18 | 2014-08-20 | $7700.00 | Window Closed / Lapsed |