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US6869638B2
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Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
Assignee: Entegris Inc
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Filing: 2001-09-18
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Granted: 2005-03-22
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Expires: 2021-09-18
Abstract
Abstract A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR 1 R 2 ) x , or wherein M is Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, or Al; N is nitrogen; each of R 1 and R 2 is same or different and is independently selected from H, aryl, perfluoroaryl, C 1 -C 8 alkyl, C 1 -C 8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and an aminosilane compound of the formula H x SiA y (NR 1 R 2 ) 4-x-y or wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R 1 and R 2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 -C 8 alkyl, and C 1 -C 8 perfluoroalkyl; and n is from 1-6. By comparison with the standard SiO 2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.
Inventors
- 👤 Thomas H. Baum
- 👤 Chongying Xu
- 👤 Bryan C. Hendrix
- 👤 Jeffrey F. Roeder
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:33
CPC Classifications
C; C07; C07F; C07F7/00; H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; C07F7/003; C07F7/02; C07F7/025; C07F7/08; C07F7/10; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/083; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/405; H10D64/01342; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P14/6687; H10P14/6689; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6928; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10D64/693; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/693; H10P14/6938; H10P14/6939; H10P14/69392
Claims Analysis
Total Claims: 57
Claim 1
Independent Claim
226 words
A CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including a vapor source reagent-mixture including a metalloamide source reagent compound selected from the group consisting of: M(NR 1 R 2 ) x ; and wherein M is selected from the group consisting of Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R 1 and R 2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 -C 8 alkyl, C 1 -C 8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and it is from 1-6; and an aminosilane source reagent compound selected from the group consisting of: H x SiA y (NR 1 R 2 ) 4-x-y ; and wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R 1 and R 2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 -C 8 alkyl, and C 1 -C 8 perfluoroalkyl; and n is from 1-6; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; n is from 1-6.
Claim 2
Dependent Claim
226 words
A CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including a vapor source reagent-mixture including a metalloamide source reagent compound selected from the group consisting of: M(NR 1 R 2 ) x ; and wherein M is selected from the group consisting of Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R 1 and R 2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 -C 8 alkyl, C 1 -C 8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and it is from 1-6; and an aminosilane source reagent compound selected from the group consisting of: H x SiA y (NR 1 R 2 ) 4-x-y ; and wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R 1 and R 2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 -C 8 alkyl, and C 1 -C 8 perfluoroalkyl; and n is from 1-6; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; n is from 1-6.
Claim 3
Dependent Claim
45 words
The CVD precursor composition according to claim 1 , wherein the aminosilane soiree reagent compound is selected from the group consisting of: Si(NMe 2 ) 3 Cl, Si(NEt 2 ) 2 Cl 2 , Si(NMe 2 ) 4 , and Si(NEt 2 ) 4 .
Claim 4
Dependent Claim
32 words
The CVD precursor composition according to claim 1 , wherein the metalloamide source reagent compound and the aminosilane source reagent compound are injected by liquid delivery into a chemical vapor deposition chamber.
Claim 5
Dependent Claim
31 words
The CVD precursor composition according to claim 1 , wherein the metalloamide source reagent compound and the aminosilane source reagent compound are delivered by bubbler into a chemical vapor deposition chamber.
Claim 6
Dependent Claim
48 words
The CVD precursor composition according to claim 1 , wherein the precursor composition further comprises a solvent medium selected from the coup consisting of: ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers and combinations of two or more of the foregoing.
Claim 7
Dependent Claim
26 words
The CVD precursor composition according to claim 1 , wherein the metalloamide source reagent compound is injected by liquid delivery into a chemical vapor deposition chamber.
Claim 8
Dependent Claim
107 words
A CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including at least one aminosilane source reagent compound selected from the group consisting of: H x SiA y (NR 1 R 2 ) 4-x-y ; and wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 1 to 3; N is nitrogen; each of R 1 and R 2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 -C 8 alkyl, and C 1 -C 8 perfluoroalkyl; and n is from 1-6.
Claim 9
Dependent Claim
107 words
A CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including at least one aminosilane source reagent compound selected from the group consisting of: H x SiA y (NR 1 R 2 ) 4-x-y ; and wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 1 to 3; N is nitrogen; each of R 1 and R 2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 -C 8 alkyl, and C 1 -C 8 perfluoroalkyl; and n is from 1-6.
Claim 10
Dependent Claim
53 words
A CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including at least one aminosilane source reagent compound selected from the group consisting of Si(NMe 2 ) 2 Cl, Si(NEt 2 ) 2 Cl 2 , Si(NMe 2 ) 4 , and Si(NEt 2 ) 4 .
Claim 11
Dependent Claim
53 words
A CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including at least one aminosilane source reagent compound selected from the group consisting of Si(NMe 2 ) 2 Cl, Si(NEt 2 ) 2 Cl 2 , Si(NMe 2 ) 4 , and Si(NEt 2 ) 4 .
Claim 12
Dependent Claim
20 words
The CVD precursor composition according to claim 7 , wherein R 1 and R 2 of the aminosilane are methyl.
Claim 13
Dependent Claim
16 words
The CVD precursor composition according to claim 7 , wherein R 1 and R 2 ethyl.
Claim 14
Dependent Claim
75 words
A CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including at least one aminosilane source reagent compound having the formula: H x SiA y (NR 1 R 2 ) 4-r-yt wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is halogen; Y is from 0 to 3; N is nitrogen; R 1 is methyl, R 2 is ethyl; and n is from 1-6.
Claim 15
Dependent Claim
75 words
A CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including at least one aminosilane source reagent compound having the formula: H x SiA y (NR 1 R 2 ) 4-r-yt wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is halogen; Y is from 0 to 3; N is nitrogen; R 1 is methyl, R 2 is ethyl; and n is from 1-6.
Claim 16
Dependent Claim
19 words
The CVD precursor composition according to claim 11 , wherein the aminosilane source reagent compound is Si(NMeEt) 4 .
Claim 17
Dependent Claim
141 words
A CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including at least one aminosilane source reagent compound selected from the group consisting of: H x SiA y (NR 1 R 2 ) 4-x-y ; and wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R 1 and R 2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 -C 8 alkyl, and C 1 -C 8 perfluoroalkyl; and n is from 1-6 and a solvent medium selected from the group consisting of: ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers and combinations of two or more of the foregoing.
Claim 18
Dependent Claim
141 words
A CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including at least one aminosilane source reagent compound selected from the group consisting of: H x SiA y (NR 1 R 2 ) 4-x-y ; and wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R 1 and R 2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 -C 8 alkyl, and C 1 -C 8 perfluoroalkyl; and n is from 1-6 and a solvent medium selected from the group consisting of: ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers and combinations of two or more of the foregoing.
Claim 19
Dependent Claim
14 words
The CVD precursor composition according to claim 13 , wherein the solvent is octane.
Claim 20
Dependent Claim
26 words
The CVD precursor composition according to claim 13 , wherein the aminosilane source reagent compound is injected by liquid delivery into a chemical vapor deposition chamber.
Claim 21
Dependent Claim
102 words
The CVD precursor of claim 13 , wherein the precursor composition further comprises a metalloamide source reagent compound selected from the group consisting of: M(NR 1 R 2 ) x ; and wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen each of R 1 and R 2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 -C 8 alkyl, C 1 -C 8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; end n is from 1-6.
Claim 22
Dependent Claim
22 words
The CVD precursor composition according to claim 16 , wherein R 1 and R 2 of the metalloamide source reagent are methyl.
Claim 23
Dependent Claim
23 words
The CVD precursor composition according to claim 16 , wherein R 1 and R 2 of the metalloamide source reagent compound are ethyl.
Claim 24
Dependent Claim
31 words
The CVD precursor composition according to claim 16 , wherein R 1 of the metalloamide source reagent compound is methyl and R 2 of the metalloamide source reagent compound is ethyl.
Claim 25
Dependent Claim
13 words
The CVD precursor composition according to claim 16 , wherein M is Zr.
Claim 26
Dependent Claim
13 words
The CVD precursor composition according to claim 16 , wherein M is Hf.
Claim 27
Dependent Claim
150 words
The CVD precursor composition according to claim 16 , wherein the metalloamide source reagent compound is selected from the group consisting of: Zr(NMe 2 ) 4 , Zr(NMeEt) 4 , Zr(NEt 2 ) 4 , Ta(NEt 2 ) 5 , Ta(NMeEt 2 ) 5 , Ta(NMeEt) 5 , Zr(NiPr 2 ) 4 , Zr(NMe 2 ) 2 (NPr 2 ) 2 , Zr(NC 6 H 12 ) 4 , Zr(NEt 2 ) 2 (NPr 2 ) 2 , Hf(NEt 2 ) 4 , Hf(NMe 2 ) 4 , Hf(NMeEt) 4 , La(NMe 2 ) 3 , La(NEt 2 ) 3 , La(NMeEt) 3 , Al(NMe 2 ) 3 , Al(NEt 2 ) 3 , Y(NMe 2 ) 3 , Y(NEt 2 ) 3 , Y(NMeEt) 3 , Ti(NMe 2 ) 4 , Ti(NEt 3 ) 4 , Ti(NMeEt) 4 , Ta(NMe 2 ) 5 , Ta(NEt 2 ) 5 .
Claim 28
Dependent Claim
49 words
The CVD precursor composition according to claim 16 , wherein the metalloamide source reagent compound is selected from the group consisting of Zr(NMe 2 ) 4 , Zr(NEt 2 ) 4 , Zr(NMeEt) 4 , Hf(NEt 2 ) 4 , Hf(NMe 2 ) 4 , and Hf(NMeEt) 4 .
Claim 29
Dependent Claim
222 words
A CVD multi-component, single source reagent composition useful for forming a silicate thin film dielectric on a substrate, the source reagent composition comprising at least one metalloamide vapor source reagent compound selected from the group consisting of: M(NR 1 R 2 ) x ; and wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R 1 and R 2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 -C 8 alkyl, C 1 -C 8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and n is from 1-6; and an aminosilane vapor source reagent compound selected from the group consisting of: H x SiA y (NR 1 R 2 ) 4-x-y ; and wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R 1 and R 2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 -C 8 alkyl, and C 1 -C 8 perfluoroalkyl; and a is from 1-6; and a solvent medium in which the metalloamide compound and the aminosilane compound are soluble or suspendable.
Claim 30
Dependent Claim
222 words
A CVD multi-component, single source reagent composition useful for forming a silicate thin film dielectric on a substrate, the source reagent composition comprising at least one metalloamide vapor source reagent compound selected from the group consisting of: M(NR 1 R 2 ) x ; and wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R 1 and R 2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 -C 8 alkyl, C 1 -C 8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and n is from 1-6; and an aminosilane vapor source reagent compound selected from the group consisting of: H x SiA y (NR 1 R 2 ) 4-x-y ; and wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R 1 and R 2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 -C 8 alkyl, and C 1 -C 8 perfluoroalkyl; and a is from 1-6; and a solvent medium in which the metalloamide compound and the aminosilane compound are soluble or suspendable.
Claim 31
Dependent Claim
88 words
A CVD method of forming a dielectric thin film on a substrate, comprising the steps of: vaporizing a source reagent composition comprising at least one metalloamide source reagent compound and at least one aminosilane source reagent compound, to form a source reagent precursor vapor; transporting the source reagent precursor vapor into a chemical vapor deposition zone, optionally using a carrier gas; contacting the source reagent precursor vapor with a substrate in said chemical vapor deposition zone at elevated temperature to deposit a dielectric thin film on the substrate.
Claim 32
Dependent Claim
88 words
A CVD method of forming a dielectric thin film on a substrate, comprising the steps of: vaporizing a source reagent composition comprising at least one metalloamide source reagent compound and at least one aminosilane source reagent compound, to form a source reagent precursor vapor; transporting the source reagent precursor vapor into a chemical vapor deposition zone, optionally using a carrier gas; contacting the source reagent precursor vapor with a substrate in said chemical vapor deposition zone at elevated temperature to deposit a dielectric thin film on the substrate.
Claim 33
Dependent Claim
98 words
The method according to claim 25 , wherein the metalloamide source reagent compound is selected from the group consisting of: M(NR 1 R 2 ) x ; and wherein M is selected from the group consisting of Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R 1 and R 2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 -C 8 alkyl, C 1 -C 8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and n is from 1-6.
Claim 34
Dependent Claim
20 words
The CVD method according to claim 25 , wherein the source reagent composition is vaporized in a liquid delivery apparatus.
Claim 35
Dependent Claim
26 words
The CVD method according to claim 25 , wherein the source reagent vapor is transported into the chemical vapor deposition chamber in a pulsed deposition mode.
Claim 36
Dependent Claim
21 words
The CVD method according to claim 25 , wherein the dielectric thin film is deposited in the absence of an oxidizer.
Claim 37
Dependent Claim
18 words
The CVD method according to claim 25 , wherein the source reagent vapor further comprises a co-reactive gas.
Claim 38
Dependent Claim
25 words
The CVD method according to claim 30 , wherein the co-reactive gas is selected from the group consisting of ozone, water vapor and reactive alcohols.
Claim 39
Dependent Claim
46 words
The CVD method according to claim 25 , wherein the metalloamide source reagent compound is selected from the group consisting of: Zr(NMe 2 ) 4 , Zr(NEt 2 ) 4, Zr(NMeEt) 4, Hf(NMe 2 ) 4 , Hf(NEt 2 ) 4 , and Hf(NMeEt) 4 .
Claim 40
Dependent Claim
20 words
The CVD method according to claim 25 , wherein the metalloamide source reagent compound is Hf(NMe 2 ) 4 .
Claim 41
Dependent Claim
83 words
A CVD method of forming a dielectric thin film on a substrate, comprising the steps of: vaporizing a source reagent composition comprising at least one metalloamide precursor dissolved or suspended in octane, to form a source reagent precursor vapor; transforming the source reagent precursor vapor into a chemical vapor deposition zone, optionally using a carrier gas; contacting the source reagent precursor vapor with a substrate in the chemical vapor deposition zone at elevated temperature, to deposit a dielectric thin film on the substrate.
Claim 42
Dependent Claim
83 words
A CVD method of forming a dielectric thin film on a substrate, comprising the steps of: vaporizing a source reagent composition comprising at least one metalloamide precursor dissolved or suspended in octane, to form a source reagent precursor vapor; transforming the source reagent precursor vapor into a chemical vapor deposition zone, optionally using a carrier gas; contacting the source reagent precursor vapor with a substrate in the chemical vapor deposition zone at elevated temperature, to deposit a dielectric thin film on the substrate.
Claim 43
Dependent Claim
21 words
The CVD method according to claim 25 , wherein the metalloamide source reagent compound is solubilized or suspended in a solvent.
Claim 44
Dependent Claim
20 words
The CVD method according to claim 25 , wherein the metalloamide source reagent compound is Zr(NMe 2 ) 4 .
Claim 45
Independent Claim
79 words
A method of forming a dielectric thin film a substrate, comprising the steps of: vaporizing a source reagent composition comprising La(NMe 2 ) and Zr(NMe 2 ) 4 to form a source reagent precursor vapor; transporting the source reagent precursor vapor into a chemical vapor deposition zone, optionally using a carrier gas; contacting the source reagent precursor vapor with a substrate in the chemical vapor deposition zone at elevated temperature to deposit a dielectric thin film on the substrate.
Claim 46
Independent Claim
79 words
A method of forming a dielectric thin film a substrate, comprising the steps of: vaporizing a source reagent composition comprising La(NMe 2 ) and Zr(NMe 2 ) 4 to form a source reagent precursor vapor; transporting the source reagent precursor vapor into a chemical vapor deposition zone, optionally using a carrier gas; contacting the source reagent precursor vapor with a substrate in the chemical vapor deposition zone at elevated temperature to deposit a dielectric thin film on the substrate.
Claim 47
Dependent Claim
79 words
A CVD method of forming a dielectric thin film on a substrate, comprising the steps of: vaporizing a source reagent composition comprising a X(NMe 2 ) 3 , to form a source reagent precursor vapor; transporting the source reagent precursor vapor into a chemical vapor deposition zone, optionally using a carrier gas; contacting the source reagent precursor vapor with a substrate in said chemical vapor deposition zone at elevated temperature to deposit a dielectric thin film on the substrate.
Claim 48
Dependent Claim
79 words
A CVD method of forming a dielectric thin film on a substrate, comprising the steps of: vaporizing a source reagent composition comprising a X(NMe 2 ) 3 , to form a source reagent precursor vapor; transporting the source reagent precursor vapor into a chemical vapor deposition zone, optionally using a carrier gas; contacting the source reagent precursor vapor with a substrate in said chemical vapor deposition zone at elevated temperature to deposit a dielectric thin film on the substrate.
Claim 49
Dependent Claim
87 words
A CVD method of forming a dielectric thin film on a substrate, comprising the steps of: vaporizing a source reagent composition comprising Hf(N(CH 3 ) 2 ) 4 and La(N(CH 3 ) 2 ) 3 , to form a source reagent precursor vapor; transporting the source reagent precursor vapor into a chemical vapor deposition zone, optionally using a carrier gas; contacting the source reagent precursor vapor with a substrate in the chemical vapor deposition zone at elevated temperature to deposit a dielectric thin film on the substrate.
Claim 50
Dependent Claim
87 words
A CVD method of forming a dielectric thin film on a substrate, comprising the steps of: vaporizing a source reagent composition comprising Hf(N(CH 3 ) 2 ) 4 and La(N(CH 3 ) 2 ) 3 , to form a source reagent precursor vapor; transporting the source reagent precursor vapor into a chemical vapor deposition zone, optionally using a carrier gas; contacting the source reagent precursor vapor with a substrate in the chemical vapor deposition zone at elevated temperature to deposit a dielectric thin film on the substrate.
Claim 51
Dependent Claim
31 words
The CVD method according to claim 25 , wherein the metalloamide source reagent compound is Hf(NMe 2 ) 4 and the aminosilane source reagent compound is Si(NMe 2 ) 3 Cl.
Claim 52
Dependent Claim
30 words
The CVD method according to claim 25 , wherein the carrier gas is selected from the group consisting of: He, Ar, H 2 , N 2 and O 2 .
Claim 53
Dependent Claim
30 words
The CVD method according to claim 25 , further comprising an oxidizing gas selected from the group consisting of: O 2 , N 2 O, NO and O 3 .
Claim 54
Dependent Claim
16 words
The CVD method according to claim 42 , wherein the oxidizing gas is N 2 O.
Claim 55
Dependent Claim
21 words
The CVD method according to claim 25 , further comprising an oxidizing gas, wherein the oxidizing gas is N 2 O.
Claim 56
Dependent Claim
31 words
The CVD method according to claim 25 , wherein the metalloamide source reagent compound is vaporized at a temperature in a range of from about 100° C. to about 300° C.
Claim 57
Dependent Claim
26 words
The CVD method according to claim 25 , wherein the temperature in the chemical vapor deposition zone is between about 350° C. to about 750° C.
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