US5976991A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane
Assignee: Versum Materials US LLC
•
Filing: 1998-06-11
•
Granted: 1999-11-02
•
Expires: 2018-06-11
Abstract
Abstract A process for the chemical vapor deposition of silicon dioxide and silicon oxynitride from reactant gases O 2 , O 3 , N 2 O, NO, NO 2 , NH 3 and a silane of the formula: (t-C 4 H 9 NH) 2 SiH 2 . A process whereby a stack of silicon containing dielectrics ranging from silicon nitride to silicon oxide may be deposited successively (at the same pressure and temperature) by changing the reactants O 2 , O 3 , N 2 O, NO, NO 2 , NH 3 while maintaing a constant flow of (t-C 4 H 9 NH) 2 SiH 2 . The films are suitable for use in the semiconductor and related industries.
Inventors
- 👤 Ravi Kumar Laxman
- 👤 David Allen Roberts
- 👤 Arthur Kenneth Hochberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:18
CPC Classifications
B; B05; B05D; B05D5/00; H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/308; C23C16/40; C23C16/401; C23C16/402; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6687; H10P14/6922; H10P14/6927; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
78 words
A process for the deposition on a substrate of a film of an oxygen containing silicon compound selected from the group consisting of silicon dioxide and silicon oxynitride by reacting bis(tertiarybutylamino)silane at an elevated temperature with a reactant gas selected from the group consisting of oxygen, ozone and mixtures thereof when said silicon compound is silicon dioxide or selected from the group consisting of a nitrogen oxide, ammonia and mixtures thereof when said silicon compound is silicon oxynitride.
Claim 2
Dependent Claim
78 words
A process for the deposition on a substrate of a film of an oxygen containing silicon compound selected from the group consisting of silicon dioxide and silicon oxynitride by reacting bis(tertiarybutylamino)silane at an elevated temperature with a reactant gas selected from the group consisting of oxygen, ozone and mixtures thereof when said silicon compound is silicon dioxide or selected from the group consisting of a nitrogen oxide, ammonia and mixtures thereof when said silicon compound is silicon oxynitride.
Claim 3
Dependent Claim
21 words
The process of claim 1 wherein the temperature of the substrate is in the range of approximately 500 to 800° C.
Claim 4
Dependent Claim
19 words
The process of claim 1 wherein the pressure is in the range of approximately 20 mTorr to 1 atmosphere.
Claim 5
Dependent Claim
19 words
The process of claim 1 wherein the molar ratio of reactant gases to silane is greater than approximately 1:1.
Claim 6
Dependent Claim
10 words
The process of claim 1 wherein the substrate is silicon.
Claim 7
Dependent Claim
12 words
The process of claim 1 wherein the substrate is an electronic device.
Claim 8
Dependent Claim
13 words
The process of claim 1 wherein the substrate is a flat panel display.
Claim 9
Dependent Claim
111 words
A process for the chemical vapor deposition on a substrate of silicon dioxide in a reaction zone, comprising the steps of: a) heating said substrate to a temperature in the range of approximately 500-800° C. in said zone; b) maintaining the substrate at a pressure in the range of approximately 20 mTorr-1 atmosphere in said zone; c) introducing into said zone a reactant gas of O 2 and a silane of the formula: (t-C 4 H 9 NH) 2 SiH 2 and reacting said reactant gas with said silane; and d) maintaining the conditions of a) through c) sufficient to cause a film of silicon dioxide to deposit on the substrate.
Claim 10
Dependent Claim
111 words
A process for the chemical vapor deposition on a substrate of silicon dioxide in a reaction zone, comprising the steps of: a) heating said substrate to a temperature in the range of approximately 500-800° C. in said zone; b) maintaining the substrate at a pressure in the range of approximately 20 mTorr-1 atmosphere in said zone; c) introducing into said zone a reactant gas of O 2 and a silane of the formula: (t-C 4 H 9 NH) 2 SiH 2 and reacting said reactant gas with said silane; and d) maintaining the conditions of a) through c) sufficient to cause a film of silicon dioxide to deposit on the substrate.
Claim 11
Dependent Claim
124 words
A process for the chemical vapor deposition on a substrate of silicon oxynitride in a reaction zone, comprising the steps of: a) heating said substrate to a temperature in the range of approximately 500-800° C. in said zone; b) maintaining the substrate at a pressure in the range of approximately 20 mTorr-1 atmosphere in said zone; c) introducing into said zone reactant gases selected from the group consisting of N 2 O, NO, NO 2 , and mixtures thereof, ammonia and a silane of the formula: (t-C 4 H 9 NH) 2 SiH 2 and reacting said reactant gases with said silane; and d) maintaining the conditions of a) through c) sufficient to cause a film of silicon oxynitride to deposit on the substrate.
Claim 12
Dependent Claim
124 words
A process for the chemical vapor deposition on a substrate of silicon oxynitride in a reaction zone, comprising the steps of: a) heating said substrate to a temperature in the range of approximately 500-800° C. in said zone; b) maintaining the substrate at a pressure in the range of approximately 20 mTorr-1 atmosphere in said zone; c) introducing into said zone reactant gases selected from the group consisting of N 2 O, NO, NO 2 , and mixtures thereof, ammonia and a silane of the formula: (t-C 4 H 9 NH) 2 SiH 2 and reacting said reactant gases with said silane; and d) maintaining the conditions of a) through c) sufficient to cause a film of silicon oxynitride to deposit on the substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-01 | 2003-05-03 | 2003-11-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-01 | 2007-05-03 | 2007-11-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-01 | 2011-05-03 | 2011-11-02 | $7700.00 | Window Closed / Lapsed |