Patent US6863725B2 successfully refreshed from Google Patents.
US6863725B2
Expired / Lapsed
US
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Method of forming a Ta2O5 comprising layer
Assignee: CJ Corp
•
Filing: 2003-02-04
•
Granted: 2005-03-08
•
Expires: 2023-02-04
Abstract
Abstract In one aspect, a substrate is positioned within a deposition chamber. Gaseous precursors comprising TaF 5 and at least one of H 2 O and O 3 are fed to the deposition chamber under conditions effective to deposit a Ta 2 O 5 comprising layer on the substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate within the chamber to form a first species monolayer from a gaseous first precursor comprising TaF 5 . The chemisorbed first species is contacted with a gaseous second precursor comprising at least one of H 2 O and O 3 to react with the first species to form a monolayer comprising Ta and O. The chemisorbing and contacting are successively repeated under conditions effective to form a mass of material on the substrate comprising Ta 2 O 5 .
Inventors
- 👤 Brian A. Vaartstra
- 👤 Trung Tri Doan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:08
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45536; C23C16/22; C23C16/30; C23C16/40; C23C16/405; C23C16/50; C23C16/511; C23C16/52
Claims Analysis
Total Claims: 73
Claim 1
Independent Claim
87 words
A method of forming a Ta 2 O 5 comprising layer on a substrate, comprising: positioning a substrate within a deposition chamber; and feeding gaseous precursors comprising TaF 5 and at least one of H 2 O and O 3 to the deposition chamber under conditions effective to deposit a Ta 2 O 5 comprising layer on the substrate, the conditions being effective to form at least a maiority of the Ta 2 O 5 to be crystalline in a 001 oriented hexagonal phase as initially deposited.
Claim 2
Independent Claim
87 words
A method of forming a Ta 2 O 5 comprising layer on a substrate, comprising: positioning a substrate within a deposition chamber; and feeding gaseous precursors comprising TaF 5 and at least one of H 2 O and O 3 to the deposition chamber under conditions effective to deposit a Ta 2 O 5 comprising layer on the substrate, the conditions being effective to form at least a maiority of the Ta 2 O 5 to be crystalline in a 001 oriented hexagonal phase as initially deposited.
Claim 3
Dependent Claim
24 words
The method of claim 1 wherein the Ta 2 O 5 comprising layer is deposited onto a substrate outer surface which is substantially crystalline.
Claim 4
Dependent Claim
31 words
The method of claim 1 wherein the conditions comprise feeding TaF 5 and at least one of H 2 O and O 3 to the deposition chamber at the same time.
Claim 5
Dependent Claim
31 words
The method of claim 1 wherein the conditions comprise feeding TaF 5 and at least one of H 2 O and O 3 to the deposition chamber at different respective times.
Claim 6
Dependent Claim
27 words
The method of claim 4 wherein the conditions are void of any inert purge gas feeding to the chamber at any time intermediate said different respective times.
Claim 7
Dependent Claim
45 words
The method of claim 4 further comprising a period of time intermediate said different respective times when no detectable gaseous precursor is fed to the chamber, an inert purge gas being fed to the chamber during at least some of said intermediate period of time.
Claim 8
Dependent Claim
27 words
The method of claim 4 wherein some of the TaF 5 and at least one of the H 2 O and O 3 feedings overlap in time.
Claim 9
Dependent Claim
27 words
The method of claim 4 wherein neither of the TaF 5 and at least one of the H 2 O and O 3 feedings overlap in time.
Claim 10
Dependent Claim
18 words
The method of claim 1 wherein the conditions comprise plasma generation of at least one of the precursors.
Claim 11
Dependent Claim
14 words
The method of claim 9 wherein the plasma generation is within the deposition chamber.
Claim 12
Dependent Claim
15 words
The method of claim 9 wherein the plasma generation is remote from the deposition chamber.
Claim 13
Dependent Claim
16 words
The method of claim 1 wherein the conditions are void of plasma generation of the precursors.
Claim 14
Dependent Claim
15 words
The method of claim 1 wherein H 2 O comprises one of the gaseous precursors.
Claim 15
Dependent Claim
14 words
The method of claim 1 wherein O 3 comprises one of the gaseous precursors.
Claim 16
Dependent Claim
20 words
The method of claim 1 wherein the gaseous precursors comprise a combined feeding of O 3 and O 2 .
Claim 17
Dependent Claim
17 words
The method of claim 1 wherein the gaseous precursors comprise H 2 O and O 3 .
Claim 18
Dependent Claim
22 words
The method of claim 16 wherein the conditions comprises a combined feeding of the H 2 O and the O 3 .
Claim 19
Dependent Claim
20 words
The method of claim 1 wherein the gaseous precursors comprise H 2 O, O 3 , and O 2 .
Claim 20
Dependent Claim
25 words
The method of claim 18 wherein the conditions comprises a combined feeding of the H 2 O, the O 3 and the O 2 .
Claim 21
Dependent Claim
22 words
The method of claim 1 wherein the conditions are void of feeding any detectable level of H 2 to the deposition chamber.
Claim 22
Dependent Claim
21 words
The method of claim 1 wherein the conditions comprise a substrate temperature of from about 200° C. to about 400° C.
Claim 23
Dependent Claim
21 words
The method of claim 1 wherein the conditions comprise a substrate temperature of from about 250° C. to about 300° C.
Claim 24
Dependent Claim
21 words
The method of claim 1 wherein the conditions comprise a chamber pressure of from about 1×10 −7 to about 10 Torr.
Claim 25
Dependent Claim
21 words
The method of claim 1 wherein the conditions comprise a chamber pressure of from about 1×10 −3 to about 10 Torr.
Claim 26
Dependent Claim
12 words
The method of claim 1 wherein the conditions comprise atomic layer deposition.
Claim 27
Dependent Claim
12 words
The method of claim 1 wherein the conditions comprise chemical vapor deposition.
Claim 28
Dependent Claim
26 words
The method of claim 1 wherein the conditions comprise atomic layer deposition for a period of time and chemical vapor deposition for another period of time.
Claim 29
Dependent Claim
18 words
The method of claim 1 comprising fabricating the layer as at least part of a capacitor dielectric region.
Claim 30
Independent Claim
75 words
A method of forming a Ta 2 O 5 comprising layer on a substrate, comprising: positioning a substrate within a deposition chamber; and feeding gaseous precursors comprising TaF 5 and H 2 O to the deposition chamber under conditions effective to deposit a Ta 2 O 5 comprising layer on the substrate having at least a majority of the Ta 2 O 5 to be crystalline in a 001 oriented hexagonal phase as initially deposited.
Claim 31
Independent Claim
75 words
A method of forming a Ta 2 O 5 comprising layer on a substrate, comprising: positioning a substrate within a deposition chamber; and feeding gaseous precursors comprising TaF 5 and H 2 O to the deposition chamber under conditions effective to deposit a Ta 2 O 5 comprising layer on the substrate having at least a majority of the Ta 2 O 5 to be crystalline in a 001 oriented hexagonal phase as initially deposited.
Claim 32
Dependent Claim
16 words
The method of claim 29 wherein the conditions comprise feeding O 3 to the deposition chamber.
Claim 33
Dependent Claim
24 words
The method of claim 29 wherein the conditions comprise feeding TaF 5 and H 2 O to the deposition chamber at the same time.
Claim 34
Dependent Claim
24 words
The method of claim 29 wherein the conditions comprise feeding TaF 5 and H 2 O to the deposition chamber at different respective times.
Claim 35
Dependent Claim
27 words
The method of claim 32 wherein the conditions are void of any inert purge gas feeding to the chamber at any time intermediate said different respective times.
Claim 36
Dependent Claim
45 words
The method of claim 32 further comprising a period of time intermediate said different respective times when no detectable gaseous precursor is fed to the chamber, an inert purge gas being fed to the chamber during at least some of said intermediate period of time.
Claim 37
Dependent Claim
20 words
The method of claim 32 wherein some of the TaF 5 and the H 2 O feedings overlap in time.
Claim 38
Dependent Claim
20 words
The method of claim 32 wherein neither of the TaF 5 and the H 2 O feedings overlap in time.
Claim 39
Dependent Claim
18 words
The method of claim 29 wherein the conditions comprise plasma generation of at least one of the precursors.
Claim 40
Dependent Claim
14 words
The method of claim 37 wherein the plasma generation is within the deposition chamber.
Claim 41
Dependent Claim
15 words
The method of claim 37 wherein the plasma generation is remote from the deposition chamber.
Claim 42
Dependent Claim
16 words
The method of claim 29 wherein the conditions are void of plasma generation of the precursors.
Claim 43
Dependent Claim
22 words
The method of claim 29 wherein the conditions are void of feeding any detectable level of H 2 to the deposition chamber.
Claim 44
Dependent Claim
21 words
The method of claim 29 wherein the conditions comprise a substrate temperature of from about 200° C. to about 400° C.
Claim 45
Dependent Claim
21 words
The method of claim 29 wherein the conditions comprise a substrate temperature of from about 250° C. to about 300° C.
Claim 46
Dependent Claim
21 words
The method of claim 29 wherein the conditions comprise a chamber pressure of from about 1×10 −7 to about 10 Torr.
Claim 47
Dependent Claim
21 words
The method of claim 29 wherein the conditions comprise a chamber pressure of from about 1×10 −3 to about 10 Torr.
Claim 48
Dependent Claim
12 words
The method of claim 29 wherein the conditions comprise atomic layer position.
Claim 49
Dependent Claim
12 words
The method of claim 29 wherein the conditions comprise chemical vapor deposition.
Claim 50
Dependent Claim
26 words
The method of claim 29 wherein the conditions comprise atomic layer position for a period of time and chemical vapor deposition for another period of time.
Claim 51
Dependent Claim
18 words
The method of claim 29 comprising fabricating the layer as at least part of a capacitor dielectric region.
Claim 52
Dependent Claim
138 words
An atomic layer deposition method of forming a Ta 2 O 5 comprising layer on a substrate, comprising: positioning a substrate within a deposition chamber; chemisorbing a first species to form a first species monolayer onto the substrate within the chamber from a gaseous first precursor comprising TaF 5 ; contacting the chemisorbed first species with a gaseous second precursor comprising at least one of H 2 O and O 3 to react with the first species to form a monolayer comprising Ta and O; and successively repeating said chemisorbing and contacting under conditions effective to form a mass of material on the substrate comprising Ta 2 O 5 the successively repeating being effective to form at least a majority of the Ta 2 O 5 to be crystalline in a 001 oriented hexagonal phase as initially deposited.
Claim 53
Dependent Claim
138 words
An atomic layer deposition method of forming a Ta 2 O 5 comprising layer on a substrate, comprising: positioning a substrate within a deposition chamber; chemisorbing a first species to form a first species monolayer onto the substrate within the chamber from a gaseous first precursor comprising TaF 5 ; contacting the chemisorbed first species with a gaseous second precursor comprising at least one of H 2 O and O 3 to react with the first species to form a monolayer comprising Ta and O; and successively repeating said chemisorbing and contacting under conditions effective to form a mass of material on the substrate comprising Ta 2 O 5 the successively repeating being effective to form at least a majority of the Ta 2 O 5 to be crystalline in a 001 oriented hexagonal phase as initially deposited.
Claim 54
Dependent Claim
26 words
The method of claim 50 further comprising a period of time intermediate said chemisorbing and contacting wherein no detectable gaseous precursor is fed to the chamber.
Claim 55
Dependent Claim
45 words
The method of claim 50 further comprising a period of time intermediate said chemisorbing and contacting wherein no detectable gaseous precursor is fed to the chamber, an inert purge gas being fed to the chamber during at least some of said intermediate period of time.
Claim 56
Dependent Claim
20 words
The method of claim 50 wherein composition of the gaseous second precursor changes at least once during the successively repeating.
Claim 57
Dependent Claim
15 words
The method of claim 50 wherein the first species is formed continuously over the substrate.
Claim 58
Dependent Claim
34 words
The method of claim 50 further comprising at least after some of the successively repeating, chemical vapor depositing Ta 2 O 5 onto the mass of material using the first and second gaseous precursors.
Claim 59
Dependent Claim
22 words
The method of claim 50 wherein the Ta 2 O 5 is deposited onto a substrate outer surface which is substantially crystalline.
Claim 60
Dependent Claim
18 words
The method of claim 50 comprising plasma generation of at least one of the first and second precursors.
Claim 61
Dependent Claim
14 words
The method of claim 57 wherein the plasma generation is within the deposition chamber.
Claim 62
Dependent Claim
15 words
The method of claim 57 wherein the plasma generation is remote from the deposition chamber.
Claim 63
Dependent Claim
19 words
The method of claim 50 wherein the chemisorbing and the contacting are void of plasma generation of the precursors.
Claim 64
Dependent Claim
14 words
The method of claim 50 wherein the gaseous second precursor comprises H 2 O.
Claim 65
Dependent Claim
14 words
The method of claim 50 wherein the gaseous second precursor comprises O 3 .
Claim 66
Dependent Claim
18 words
The method of claim 50 wherein the gaseous second precursor comprises both O 3 and O 2 .
Claim 67
Dependent Claim
19 words
The method of claim 50 wherein the gaseous second precursor comprises both H 2 O and O 3 .
Claim 68
Dependent Claim
23 words
The method of claim 50 wherein the gaseous second precursor comprises all of H 2 O, O 3 , and O 2 .
Claim 69
Dependent Claim
24 words
The method of claim 50 wherein the chemisorbing and the contacting comprise a substrate temperature of from about 200° C. to about 400° C.
Claim 70
Dependent Claim
24 words
The method of claim 50 wherein the chemisorbing and the contacting comprise a substrate temperature of from about 250° C. to about 300° C.
Claim 71
Dependent Claim
24 words
The method of claim 50 wherein the chemisorbing and the contacting comprise a chamber pressure of from about 1×10 −7 to about 10 Torr.
Claim 72
Dependent Claim
24 words
The method of claim 50 wherein the chemisorbing and the contacting comprise a chamber pressure of from about 1×10 −3 to about 10 Torr.
Claim 73
Dependent Claim
16 words
The method of claim 50 comprising fabricating the layer as at least a capacitor dielectric region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2008-03-07 | 2008-09-06 | 2009-03-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-03-07 | 2012-09-06 | 2013-03-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-03-07 | 2016-09-06 | 2017-03-08 | $7700.00 | Window Closed / Lapsed |