Abstract The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material to increase an oxygen content of the dielectric material. The invention also includes a method of forming a capacitor construction. A first capacitor electrode is formed to be supported by a semiconductor substrate. A dielectric material is formed over the first capacitor electrode. A precursor is provided at a location proximate the dielectric material, and a laser beam is focused at such location. The laser beam generates an activated oxygen species from the precursor. The activated oxygen species contacts the dielectric material. Subsequently, a second capacitor electrode is formed over the dielectric material.
A method of forming a capacitor construction comprising: forming a capacitor electrode supported by a semiconductor substrate; forming an oxide material over the capacitor electrode, the oxide material having oxygen-deficient regions therein; providing a precursor proximate the oxide material; focusing a laser beam at a distance of from about 2 mm to about 4 mm above a surface of the oxide material, the laser beam generating an activated oxygen species from the precursor; and contacting the oxide material with the activated oxygen species to at least partially reduce the oxygen deficiency within the oxygen-deficient regions.
Claim 2
Independent Claim
95 words
A method of forming a capacitor construction comprising: forming a capacitor electrode supported by a semiconductor substrate; forming an oxide material over the capacitor electrode, the oxide material having oxygen-deficient regions therein; providing a precursor proximate the oxide material; focusing a laser beam at a distance of from about 2 mm to about 4 mm above a surface of the oxide material, the laser beam generating an activated oxygen species from the precursor; and contacting the oxide material with the activated oxygen species to at least partially reduce the oxygen deficiency within the oxygen-deficient regions.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein the oxide material comprises silicon and wherein the activated oxygen species reacts with the silicon.
Claim 4
Dependent Claim
27 words
The method of claim 1 wherein the oxide material comprises at least one metal selected form the group consisting of hafnium, aluminum, barium, strontium, titanium, and tantalum.
Claim 5
Dependent Claim
23 words
The method of claim 1 wherein the providing the precursor comprises flowing a fluid comprising ozone into a reaction chamber containing the substrate.
Claim 6
Dependent Claim
18 words
The method of claim 1 wherein the substrate comprises a temperature of about 300° C. during the contacting.
Claim 7
Dependent Claim
31 words
The method of claim 1 wherein the laser beam is scanned across the surface and wherein the focal point of the laser beam does not impact the surface during the scanning.