US6376327B2
Expired / Lapsed
US
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Structures formed using excess oxygen containing material
Assignee: Micron Technology Inc
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Filing: 2001-01-04
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Granted: 2002-04-23
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Expires: 2021-01-04
Abstract
Abstract Formation of a structure includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.
Inventors
- 👤 Gurtej S. Sandhu
- 👤 Garo Derderian
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:36
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/694; H10D1/696; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
148 words
A method for use in forming a substrate assembly structure, the method comprising: providing a first conductive material, a second conductive material, and a dielectric material between at least portions of the first and second conductive material, wherein the dielectric material has an oxygen concentration, wherein at least one portion of the first and second conductive material is sandwiched between two regions of material, at least a portion of at least one of the two regions of material is formed of excess oxygen containing material, and further wherein the excess oxygen containing material includes an oxygen concentration of about 66.67 percent to about 76.6 percent; and forming one or more additional layers relative to the first conductive material, second conductive material, and dielectric material using one or more thermal processes, wherein the oxygen concentration of the dielectric material is substantially maintained during the one or more thermal processes.
Claim 2
Independent Claim
148 words
A method for use in forming a substrate assembly structure, the method comprising: providing a first conductive material, a second conductive material, and a dielectric material between at least portions of the first and second conductive material, wherein the dielectric material has an oxygen concentration, wherein at least one portion of the first and second conductive material is sandwiched between two regions of material, at least a portion of at least one of the two regions of material is formed of excess oxygen containing material, and further wherein the excess oxygen containing material includes an oxygen concentration of about 66.67 percent to about 76.6 percent; and forming one or more additional layers relative to the first conductive material, second conductive material, and dielectric material using one or more thermal processes, wherein the oxygen concentration of the dielectric material is substantially maintained during the one or more thermal processes.
Claim 3
Dependent Claim
20 words
The method of claim 1 , wherein the additional layers are formed at a temperature as high as 1000° C.
Claim 4
Dependent Claim
21 words
The method of claim 1 , wherein both the two regions of material are formed of an excess oxygen containing material.
Claim 5
Dependent Claim
18 words
The method of claim 1 , wherein the excess oxygen containing material includes an ozone enhanced oxide material.
Claim 6
Dependent Claim
19 words
The method of claim 4 , wherein the ozone enhanced oxide material is a doped ozone enhanced oxide material.
Claim 7
Dependent Claim
18 words
The method of claim 4 , wherein the ozone enhanced oxide material is an ozone enhanced tetraethylorthosilicate material.
Claim 8
Dependent Claim
19 words
The method of claim 6 , wherein the ozone enhanced tetraethylorthosilicate material is a doped ozone enhanced tetraethylorthosilicate material.
Claim 9
Dependent Claim
39 words
The method of claim 7 , wherein the doped ozone enhanced tetraethylorthosilicate material is doped with boron and phosphorous in a concentration ranging from 0 percent to about 5 percent boron and 0 percent to about 8 percent phosphorous.
Claim 10
Dependent Claim
23 words
The method of claim 1 , wherein the dielectric material is a dielectric material having a dielectric constant of about 10 or greater.
Claim 11
Dependent Claim
14 words
The method of claim 1 , wherein the substrate assembly structure comprises a wafer.
Claim 12
Dependent Claim
16 words
The method of claim 1 , wherein the substrate assembly structure comprises an integrated circuit die.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-04-22 | 2005-10-22 | 2006-04-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-04-22 | 2009-10-22 | 2010-04-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-04-22 | 2013-10-22 | 2014-04-23 | $7700.00 | Window Closed / Lapsed |