US6200874B1
Expired / Lapsed
US
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Methods for use in forming a capacitor
Assignee: Micron Technology Inc
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Filing: 1997-08-22
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Granted: 2001-03-13
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Expires: 2017-08-22
Abstract
Abstract A method for use with the formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.
Inventors
- 👤 Gurtej S. Sandhu
- 👤 Garo Derderian
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:28
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/694; H10D1/696; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
94 words
A method for use with the formation of a capacitor, the method comprising: providing a capacitor structure including: forming a first electrode on a portion of a substrate assembly, forming a dielectric material over at least a portion of the first electrode, wherein the dielectric material has a dielectric constant of about 10 or greater, and forming a second electrode over the dielectric material; and forming a layer over at least a portion of the second electrode, wherein at least the portion of the substrate assembly is formed of an excess oxygen containing material.
Claim 2
Independent Claim
94 words
A method for use with the formation of a capacitor, the method comprising: providing a capacitor structure including: forming a first electrode on a portion of a substrate assembly, forming a dielectric material over at least a portion of the first electrode, wherein the dielectric material has a dielectric constant of about 10 or greater, and forming a second electrode over the dielectric material; and forming a layer over at least a portion of the second electrode, wherein at least the portion of the substrate assembly is formed of an excess oxygen containing material.
Claim 3
Dependent Claim
30 words
The method of claim 1 , wherein both the portion of the substrate assembly and the layer formed over the second electrode is formed of an excess oxygen containing material.
Claim 4
Dependent Claim
24 words
The method of claim 1 , wherein the excess oxygen containing material is an ozone enhanced material deposited using an ozone enhanced chemical reaction.
Claim 5
Dependent Claim
18 words
The method of claim 3 , wherein the ozone enhanced material is a doped ozone enhanced oxide material.
Claim 6
Dependent Claim
17 words
The method of claim 3 , wherein the ozone enhanced material is an ozone enhanced tetraethylorthosilicate material.
Claim 7
Dependent Claim
19 words
The method of claim 5 , wherein the ozone enhanced tetraethylorthosilicate material is a doped ozone enhanced tetraethylorthosilicate material.
Claim 8
Dependent Claim
39 words
The method of claim 6 , wherein the doped ozone enhanced tetraethylorthosilicate material is doped with boron and phosphorous in a concentration ranging from 0 percent to about 5 percent boron and 0 percent to about 8 percent phosphorous.
Claim 9
Dependent Claim
24 words
The method of claim 5 , wherein the ozone enhanced tetraethylorthosilicate material includes an oxygen concentration of about 66.67 percent to about 76.6 percent.
Claim 10
Dependent Claim
53 words
The method of claim 1 , wherein the method includes forming one or more post capacitor formation layers during one or more thermal cycles relative to the capacitor structure, and further wherein an oxygen concentration of the dielectric material is substantially maintained during formation of the one or more post capacitor formation layers.
Claim 11
Dependent Claim
20 words
The method of claim 9 , wherein the one or more thermal cycles include alloying in an atmosphere of hydrogen.
Claim 12
Dependent Claim
62 words
The method of claim 1 , wherein the method includes forming one or more post capacitor formation layers during one or more thermal cycles relative to the portion of the substrate assembly formed of excess oxygen containing material, and further wherein an oxygen concentration of the dielectric material is substantially maintained during formation of the one or more post capacitor formation layers.
Claim 13
Independent Claim
55 words
A method for use with the formation of a capacitor, the method comprising: providing a first electrode; providing a dielectric material over at least a portion of the first electrode; providing a second electrode over the dielectric material; and forming an ozone enhanced doped oxide layer over at least a portion of the second electrode.
Claim 14
Independent Claim
55 words
A method for use with the formation of a capacitor, the method comprising: providing a first electrode; providing a dielectric material over at least a portion of the first electrode; providing a second electrode over the dielectric material; and forming an ozone enhanced doped oxide layer over at least a portion of the second electrode.
Claim 15
Dependent Claim
20 words
The method of claim 11 , wherein the ozone enhanced doped oxide layer is a layer of ozone enhanced BPSG.
Claim 16
Dependent Claim
29 words
The method of claim 11 , wherein the step of forming the ozone enhanced doped oxide layer includes forming a doped ozone enhanced tetraethylorthosilicate layer over the second electrode.
Claim 17
Dependent Claim
39 words
The method of claim 14 , wherein the doped ozone enhanced tetraethylorthosilicate layer is doped with boron and phosphorous in a concentration ranging from 0 percent to about 5 percent boron and 0 percent to about 8 percent phosphorous.
Claim 18
Dependent Claim
25 words
The method of claim 14 , wherein the doped ozone enhanced tetraethylorthosilicate layer includes an oxygen concentration of about 66.67 percent to about 76.6 percent.
Claim 19
Dependent Claim
23 words
The method of claim 12 , wherein at least a portion of the first electrode is provided on a ozone enhanced oxide layer.
Claim 20
Dependent Claim
56 words
The method of claim 12 , wherein the method includes forming one or more post capacitor formation layers during one or more thermal cycles relative to the ozone enhanced doped oxide layer, and further wherein an oxygen concentration of the dielectric material is substantially maintained during formation of the one or more post capacitor formation layers.
Claim 21
Dependent Claim
23 words
The method of claim 12 , wherein the dielectric material is a dielectric material having a dielectric constant of about 10 or greater.
Claim 22
Independent Claim
83 words
A method for use with the formation of a capacitor, the method comprising: providing a substrate assembly having a region formed of an ozone enhanced oxide material; forming a first electrode over at least a portion of the region of ozone enhanced oxide material; forming a dielectric material over at least a portion of the first electrode; forming a second electrode over the dielectric material and forming a layer of ozone enhanced oxide material over at least a portion of the second electrode.
Claim 23
Independent Claim
83 words
A method for use with the formation of a capacitor, the method comprising: providing a substrate assembly having a region formed of an ozone enhanced oxide material; forming a first electrode over at least a portion of the region of ozone enhanced oxide material; forming a dielectric material over at least a portion of the first electrode; forming a second electrode over the dielectric material and forming a layer of ozone enhanced oxide material over at least a portion of the second electrode.
Claim 24
Dependent Claim
19 words
The method of claim 20 , wherein the ozone enhanced oxide material includes an ozone enhanced doped oxide material.
Claim 25
Dependent Claim
18 words
The method of claim 20 , wherein the ozone enhanced oxide layer includes an ozone enhanced tetraethylorthosilicate material.
Claim 26
Dependent Claim
19 words
The method of claim 22 , wherein the ozone enhanced tetraethylorthosilicate material is a doped ozone enhanced tetraethylorthosilicate material.
Claim 27
Dependent Claim
39 words
The method of claim 23 , wherein the doped ozone enhanced tetraethylorthosilicate material is doped with boron and phosphorous in a concentration ranging from 0 percent to about 5 percent boron and 0 percent to about 8 percent phosphorous.
Claim 28
Dependent Claim
49 words
The method of claim 20 , wherein the method includes forming one or more post capacitor formation layers during one or more thermal cycles, and further wherein an oxygen concentration of the [high] dielectric material is substantially maintained during formation of the one or more post capacitor formation layers.
Claim 29
Dependent Claim
23 words
The method of claim 20 , wherein the dielectric material is a dielectric material having a dielectric constant of about 10 or greater.
Claim 30
Independent Claim
107 words
A method for use in forming a memory cell having a capacitor, the method comprising the steps of: providing a capacitor having a first electrode, a second electrode, and a dielectric material between the first and second electrode, wherein the capacitor is sandwiched between two regions, at least a portion of at least one of the two regions is formed of an ozone enhanced oxide material; and forming one or more post capacitor formation layers during one or more thermal cycles relative to the capacitor, wherein an oxygen concentration of the dielectric material is substantially maintained during formation of the one or more post capacitor formation layers.
Claim 31
Independent Claim
107 words
A method for use in forming a memory cell having a capacitor, the method comprising the steps of: providing a capacitor having a first electrode, a second electrode, and a dielectric material between the first and second electrode, wherein the capacitor is sandwiched between two regions, at least a portion of at least one of the two regions is formed of an ozone enhanced oxide material; and forming one or more post capacitor formation layers during one or more thermal cycles relative to the capacitor, wherein an oxygen concentration of the dielectric material is substantially maintained during formation of the one or more post capacitor formation layers.
Claim 32
Dependent Claim
18 words
The method of claim 27 , wherein the ozone enhanced oxide material includes an ozone enhanced tetraethylorthosilicate material.
Claim 33
Dependent Claim
19 words
The method of claim 28 , wherein the ozone enhanced tetraethylorthosilicate material is a doped ozone enhanced tetraethylorthosilicate material.
Claim 34
Dependent Claim
39 words
The method of claim 29 , wherein the doped ozone enhanced tetraethylorthosilicate material is doped with boron and phosphorous in a concentration ranging from 0 percent to about 5 percent boron and 0 percent to about 8 percent phosphorous.
Claim 35
Dependent Claim
23 words
The method of claim 27 , wherein the dielectric material is a dielectric material having a dielectric constant of about 10 or greater.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-03-12 | 2004-09-11 | 2005-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-12 | 2008-09-11 | 2009-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-03-12 | 2012-09-11 | 2013-03-13 | $7700.00 | Window Closed / Lapsed |