US5869406A
Expired / Lapsed
US
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Method for forming insulating layers between polysilicon layers
Assignee: Chang Liao Holdings LLC
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Filing: 1995-09-28
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Granted: 1999-02-09
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Expires: 2015-09-28
Abstract
Abstract A method of fabricating an integrated circuit device with a substantially uniform inter-layer dielectric layer. The method includes steps of providing a partially completed semiconductor wafer (400) where the partially completed semiconductor device has a first polysilicon layer (401) thereon. The method includes depositing a dielectric layer (405) overlying the polysilicon layer and portions of the partially completed semiconductor device at a pressure of about 1 atmosphere. A step of forming a second polysilicon layer overlying portions of the dielectric layer is also included. The dielectric layer depositing step includes combining an organic silane and an ozone at a concentration of 200 g/m3 and less.
Inventors
- 👤 Wen-Doe Su
- 👤 Chia-Lin Ku
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:13
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/093; H10W20/097; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/69215; Y; Y10; Y10S; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
128 words
A method of fabricating an integrated circuit device, said method comprising steps of: providing a partially completed semiconductor device, said partially completed semiconductor device having a first polysilicon layer thereon; forming a dielectric layer overlying said first polysilicon layer and portions of said partially completed semiconductor device at a pressure of about 1 atmosphere; forming a second polysilicon layer overlying portions of said dielectric layer; and patterning said second polysilicon region, said patterning step providing an upper surface portion of said dielectric layer that is substantially free from stringers; wherein said dielectric layer forming step comprises reacting an organic silane and an oxygen and ozone mixture, said oxygen and ozone mixture and said organic silane at a relative mass flow rate ranging from about 2.0:4.0 to about 10.0:1.0.
Claim 2
Independent Claim
128 words
A method of fabricating an integrated circuit device, said method comprising steps of: providing a partially completed semiconductor device, said partially completed semiconductor device having a first polysilicon layer thereon; forming a dielectric layer overlying said first polysilicon layer and portions of said partially completed semiconductor device at a pressure of about 1 atmosphere; forming a second polysilicon layer overlying portions of said dielectric layer; and patterning said second polysilicon region, said patterning step providing an upper surface portion of said dielectric layer that is substantially free from stringers; wherein said dielectric layer forming step comprises reacting an organic silane and an oxygen and ozone mixture, said oxygen and ozone mixture and said organic silane at a relative mass flow rate ranging from about 2.0:4.0 to about 10.0:1.0.
Claim 3
Dependent Claim
33 words
The method of claim 1 wherein said organic silane is selected from a group consisting of a tetra ethoxy silane (TEOS), a hexa methyl disilane (HMDS), and an octa methyl cyclo tetrasiloxane (OMCTS).
Claim 4
Dependent Claim
18 words
The method of claim 1 wherein said ozone has a concentration of about 150 g/m 3 and less.
Claim 5
Dependent Claim
18 words
The method of claim 1 wherein said ozone has a concentration of about 100 g/m 3 and less.
Claim 6
Dependent Claim
25 words
The method of claim 2 wherein said oxygen and ozone mixture and said organic silane are at a relative mass flow rate of about 7.5:2.0.
Claim 7
Dependent Claim
22 words
The method of claim 1 wherein said dielectric layer forming step is at a temperature of about 300° to about 500° C.
Claim 8
Dependent Claim
19 words
The method of claim 1 wherein said dielectric layer forming step is at a temperature of about 398° C.
Claim 9
Dependent Claim
25 words
The method of claim 1 further comprising a step of annealing said partially completed device at a temperature of no less than about 800° C.
Claim 10
Dependent Claim
25 words
The method of claim 1 further comprising a step of annealing said partially completed device at a temperature of no less than about 850° C.
Claim 11
Dependent Claim
18 words
The method of claim 1 wherein said ozone has a concentration at about 200 g/m 3 and less.
Claim 12
Independent Claim
80 words
A method of forming a dielectric layer, said method comprising: combining an organic silane and an oxygen and ozone mixture at a pressure of about 1 atm; and forming an insulating layer from said ozone and said organic silane mixture; wherein said insulating layer forming step comprises reacting said organic silane and said oxygen and ozone mixture, said oxygen and ozone mixture and said organic silane being at a relative mass flow rate ranging from about 2.0:4.0 to about 10.0:1.0.
Claim 13
Independent Claim
80 words
A method of forming a dielectric layer, said method comprising: combining an organic silane and an oxygen and ozone mixture at a pressure of about 1 atm; and forming an insulating layer from said ozone and said organic silane mixture; wherein said insulating layer forming step comprises reacting said organic silane and said oxygen and ozone mixture, said oxygen and ozone mixture and said organic silane being at a relative mass flow rate ranging from about 2.0:4.0 to about 10.0:1.0.
Claim 14
Dependent Claim
33 words
The method of claim 11 wherein said organic silane is selected from a group consisting of a tetra ethoxy silane (TEOS), a hexa methyl disilane (HMDS), and an octa methyl cyclo tetrasiloxane (OMCTS).
Claim 15
Dependent Claim
18 words
The method of claim 11 wherein said ozone has a concentration of about 150 g/m 3 and less.
Claim 16
Dependent Claim
18 words
The method of claim 11 wherein said ozone has a concentration of about 100 g/m 3 and less.
Claim 17
Dependent Claim
25 words
The method of claim 12 wherein said oxygen and ozone mixture and said organic silane are at a relative mass flow rate of about 7.5:2.0.
Claim 18
Dependent Claim
22 words
The method of claim 11 wherein said insulating layer forming step is at a temperature of about 300° to about 500° C.
Claim 19
Dependent Claim
19 words
The method of claim 11 wherein said insulating layer forming step is at a temperature of about 398° C.
Claim 20
Dependent Claim
23 words
The method of claim 11 further comprising a step of annealing said substrate at a temperature of no less than about 800° C.
Claim 21
Dependent Claim
25 words
The method of claim 11 further comprising a step of annealing said substrate at a temperature of no less than about 850° C. and greater.
Claim 22
Dependent Claim
18 words
The method of claim 11 wherein said ozone has a concentration of about 200 g/m 3 and less.
Claim 23
Independent Claim
109 words
A method of forming an integrated circuit device, said method comprising: providing a partially completed device comprising a plurality of regions, said plurality of regions comprising a first polysilicon region and a field isolation oxide region; introducing a mixture comprising an organic silane and an oxygen and ozone mixture at a pressure of about 1 atmosphere; and forming a dielectric layer from said mixture overlying said plurality of regions; wherein said dielectric layer forming step comprises reacting said organic silane and said oxygen and ozone mixture, said oxygen and ozone mixture and said organic silane being at a relative mass flow rate ranging from about 2.0:4.0 to about 10.0:1.0.
Claim 24
Independent Claim
109 words
A method of forming an integrated circuit device, said method comprising: providing a partially completed device comprising a plurality of regions, said plurality of regions comprising a first polysilicon region and a field isolation oxide region; introducing a mixture comprising an organic silane and an oxygen and ozone mixture at a pressure of about 1 atmosphere; and forming a dielectric layer from said mixture overlying said plurality of regions; wherein said dielectric layer forming step comprises reacting said organic silane and said oxygen and ozone mixture, said oxygen and ozone mixture and said organic silane being at a relative mass flow rate ranging from about 2.0:4.0 to about 10.0:1.0.
Claim 25
Dependent Claim
15 words
The method of claim 21 wherein said plurality of regions comprises a sidewall spacer region.
Claim 26
Dependent Claim
15 words
The method of claim 21 further comprising steps of annealing and etching said dielectric layer.
Claim 27
Dependent Claim
27 words
The method of claim 23 further comprising a step of forming a second polysilicon region overlying portions of said polysilicon layer and said field isolation oxide layer.
Claim 28
Dependent Claim
27 words
The method of claim 24 further comprising a step of patterning said second polysilicon region, said patterning step providing an upper surface substantially free from a stringer.
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