US5304398A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Chemical vapor deposition of silicon dioxide using hexamethyldisilazane
Assignee: Silicon Valley Group Thermal Systems LLC
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Filing: 1993-06-03
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Granted: 1994-04-19
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Expires: 2013-06-03
Abstract
Abstract A method for depositing silicon dioxide on the surface of a substrate or the like using a nitrogen-containing precursor is disclosed herein. In a preferred implementation the deposition is performed using an atmospheric pressure reactor, into which is directed toward the substrate surface a stream of source gas comprised of ozonated oxygen. A stream of a nitrogen-containing precursor such as, for example, hexamethyldisilazane (HMDS) is also directed into the reactor toward the substrate surface. In addition, a stream of a nitrogen-containing separator gas is directed into the reactor between the streams of precursor and source gases. The inventive deposition method has been shown to result in improved film nucleation on a variety of substrate surfaces.
Inventors
- 👤 Wilbur C. Krusell
- 👤 James P. Garcia
- 👤 Daniel M. Dobkin
- 👤 Frederick F. Walker
- 👤 Jose F. Casillas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:22
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45514; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/45519; C23C16/45595; C23C16/54
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
105 words
A method for thermal chemical vapor deposition of silicon dioxide on a surface positioned within a reaction chamber, comprising: directing into said chamber and toward said surface a first gas stream including ozone and oxygen; directing into said chamber and toward said surface a second gas stream including hexamethyldisilazane (HMDS); and directing into said chamber and toward said surface a stream of a nitrogen-containing separator gas, said stream of said nitrogen-containing separator gas being introduced into said chamber between said first and second gas streams, said first and second gas streams interacting proximate said surface to deposit a layer of silicon dioxide on said surface.
Claim 2
Independent Claim
105 words
A method for thermal chemical vapor deposition of silicon dioxide on a surface positioned within a reaction chamber, comprising: directing into said chamber and toward said surface a first gas stream including ozone and oxygen; directing into said chamber and toward said surface a second gas stream including hexamethyldisilazane (HMDS); and directing into said chamber and toward said surface a stream of a nitrogen-containing separator gas, said stream of said nitrogen-containing separator gas being introduced into said chamber between said first and second gas streams, said first and second gas streams interacting proximate said surface to deposit a layer of silicon dioxide on said surface.
Claim 3
Independent Claim
104 words
A method for thermal chemical vapor deposition of silicon dioxide on a surface of a semiconductor wafer positioned within a reaction chamber, comprising: injecting a first gas stream including ozone and oxygen into said reaction chamber through a first dispensing port; injecting a second gas stream including hexamethyldisilazane (HMDS) into said reaction chamber through a second dispensing port; and injecting a stream of a nitrogen-containing separator gas into said reaction chamber through a third dispensing port located between said first and second dispensing ports, said first and second gas streams interacting proximate said surface to deposit a layer of silicon dioxide on said surface.
Claim 4
Independent Claim
104 words
A method for thermal chemical vapor deposition of silicon dioxide on a surface of a semiconductor wafer positioned within a reaction chamber, comprising: injecting a first gas stream including ozone and oxygen into said reaction chamber through a first dispensing port; injecting a second gas stream including hexamethyldisilazane (HMDS) into said reaction chamber through a second dispensing port; and injecting a stream of a nitrogen-containing separator gas into said reaction chamber through a third dispensing port located between said first and second dispensing ports, said first and second gas streams interacting proximate said surface to deposit a layer of silicon dioxide on said surface.
Claim 5
Dependent Claim
23 words
The method of claim 2 further including the step of heating said wafer to a temperature between approximately 300 and 500 degrees centigrade.
Claim 6
Dependent Claim
26 words
The method of claim 2 further including the step of maintaining a mole percentage of ozone in said first gas of between approximately four and eight.
Claim 7
Independent Claim
158 words
A method for thermal chemical vapor deposition of a layer of silicon dioxide on a surface of a semiconductor wafer using an atmospheric pressure chemical vapor deposition apparatus, said apparatus defining a temperature-controlled reaction chamber in gaseous communication with a plurality of injection ports, comprising the steps of: heating said semiconductor wafer within said reaction chamber; injecting a first gas stream through a first one of said injection ports into said reaction chamber, said first gas stream including ozone and oxygen; injecting a second gas stream through a second one of said injection ports into said reaction chamber, said second gas stream including hexamethyldisilazane (HMDS); directing a stream of a nitrogen-containing separator gas through a third one of said injection ports into said reaction chamber, said third injection port being positioned between said first and second injection ports, said first and second gas streams interacting proximate said surface to deposit said layer of silicon dioxide on said surface.
Claim 8
Independent Claim
158 words
A method for thermal chemical vapor deposition of a layer of silicon dioxide on a surface of a semiconductor wafer using an atmospheric pressure chemical vapor deposition apparatus, said apparatus defining a temperature-controlled reaction chamber in gaseous communication with a plurality of injection ports, comprising the steps of: heating said semiconductor wafer within said reaction chamber; injecting a first gas stream through a first one of said injection ports into said reaction chamber, said first gas stream including ozone and oxygen; injecting a second gas stream through a second one of said injection ports into said reaction chamber, said second gas stream including hexamethyldisilazane (HMDS); directing a stream of a nitrogen-containing separator gas through a third one of said injection ports into said reaction chamber, said third injection port being positioned between said first and second injection ports, said first and second gas streams interacting proximate said surface to deposit said layer of silicon dioxide on said surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-04-18 | 1997-10-18 | 1998-04-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-04-18 | 2001-10-18 | 2002-04-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-04-18 | 2005-10-18 | 2006-04-19 | $7700.00 | Window Closed / Lapsed |