Normal pressure CVD process for manufacture of a semiconductor device through reaction of a nitrogen containing organic source with ozone

Abstract

Abstract There is provided a semiconductor device manufacturing process which enables film deposition at low temperatures and can produce an interlayer insulating film of good quality which exhibits good surface smoothing effect. In the TEOS-O3 system normal pressure CVD process, film growth is carried out by adding to TEOS source a source containing nitrogen in its composition. For the source is used heptamethyl disilazane (chemical formula (CH3)3SiN(CH3)Si(CH3)3), N, O-bis-trimethylsilyl acetamide (chemical formula (CH3)C(OSi(CH3)3)(NSi(CH3)3)) or tridimethylamino silane (chemical formula (CH3)2N)3SiN). Also, there is provided a semiconductor device manufacturing method which enables film deposition at a uniform growth rate irrespective of the substrate material and can produce a silicon oxide film of good quality which exhibits good surface smoothing effect. An organic source having an Si-N bond in its composition and O3 are conducted to the substrate and reacted with each other under normal pressure whereby a silicon oxide film is grown on the substrate. The organic source is, for example, hexamethyl disilazane ((CH3)3Si-N(H)-Si(CH3 )3).

Inventors

• 👤 Tsukasa Doi
• 👤 Yukiko Mori

Bibliographic Details