Method for producing a silicate layer in an integrated circuit

Abstract

Abstract A silicate layer, which is especially used as an intermediate oxide insulation layer in an integrated circuit for levelling topographic irregularities, is produced by the following method steps: photo-induced polymerization of polysiloxane by means of vapor-phase reaction taking as a basis an SiO-containing or an SiC-containing organic compound together with an O 2 -containing and/or an N 2 O-containing gas at a first temperature and under a first pressure in a reaction chamber; condensing polysiloxane to produce a polysiloxane layer on a structure, in particular on the circuit structures of the integrated circuit, in a condensation chamber separated from said reaction chamber at a second temperature, which is lower than said first temperature and which is at least high enough to prevent the SiO- or SiC-containing organic compound from condensing under a predetermined second pressure in the condensation chamber, but which is higher than the temperature at which polysiloxane will condense under said second pressure; and converting the polysiloxane layer into the silicate layer.

Inventors

• 👤 Hermann Sigmund
• 👤 Armin Klumpp

Bibliographic Details