EP0283311A2
Expired / Lapsed
EP
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Thin film forming method and thin film forming apparatus
Assignee: Toshiba Corp
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Filing: 1988-03-18
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Granted: —
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Expires: 2008-03-18
Abstract
Abstract This invention provides a thin film forming method together with a device for that method, which cools the substrate (30) below the temperature of the liquefaction point of the deposit species, so that the deposit species in gaseous phase can exist on the substrate surface under more stable conditions than those when the deposit species are flowing in gaseous phase.
Inventors
- 👤 Haruo C/O Patent Division Okano
- 👤 Sadahisa C/O Patent Division Noguchi
- 👤 Makoto C/O Patent Division Sekine
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 09:21
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; C; C23; C23C; C23C16/00; C23C16/04; C23C16/045; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/44; C23C16/46; C23C16/463; H10P14/6338; H10P14/65; H10P14/6516; H10P14/6529; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10P14/694; H10P14/6943; H10P14/69433; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10P14/6684; H10P14/6686; H10P14/69215; Y; Y10; Y10S; Y10S148/00; Y10S148/05
Claims Analysis
Total Claims: 56
Claim 1
Independent Claim
62 words
A thin film forming method, comprising the steps of - supporting a substrate (30) having a trench (31) or an unevenness thereon in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas; exhausting the interior of the reactive vessel (30); and retaining the temperature of the substrate (30) below the liquefaction point of the deposit material.
Claim 2
Dependent Claim
62 words
A thin film forming method, comprising the steps of - supporting a substrate (30) having a trench (31) or an unevenness thereon in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas; exhausting the interior of the reactive vessel (30); and retaining the temperature of the substrate (30) below the liquefaction point of the deposit material.
Claim 3
Dependent Claim
24 words
The thin film forming method according to claim 1 wherein the deposit material includes the deposit species, the active species, or the reaction products.
Claim 4
Dependent Claim
15 words
The think film forming method according to claim 1 wherein the substrate is a semiconductor.
Claim 5
Dependent Claim
50 words
The thin film forming method according to claim 1 wherein the step of activating the reactive gas includes the step of generating a plasma, the step of thermaly activating the reactive gas, the step of light activating the reactive gas, or the step of electron beam activating the reactive gas.
Claim 6
Dependent Claim
25 words
The thin film forming method according to claim 4 wherein the step of light activating includes the step of laser beam activating the reactive gas.
Claim 7
Dependent Claim
24 words
6 The think film forming method according to claim 1 wherein the step of retaining the temperature includes the step of cooling the substrate.
Claim 8
Dependent Claim
29 words
The thin film forming method according to claim 6 wherein the substrate is a semiconductor and the step of retaining the temperature includes the step of heating the substrate.
Claim 9
Dependent Claim
24 words
The thin film forming method according to claim 1 wherein the reactive gas includes an impurity to change the conductivity of the semiconductor substrate.
Claim 10
Dependent Claim
20 words
The thin film forming method according to claim 1 wherein the aspect ratio of the trench is one or more.
Claim 11
Dependent Claim
30 words
The thin film forming method according to claim 1 wherein the reactive gas is activated within that portion of the reaction vessel having the substrate supported therein or another portion.
Claim 12
Dependent Claim
23 words
The thin film forming method according to claim 1 wherein the deposit specifies is an insulator, a semiconductor, a polymer or a metal.
Claim 13
Dependent Claim
17 words
The thin film forming method according to claim 1 wherein the substrate has a mask formed thereon.
Claim 14
Dependent Claim
21 words
The thin film forming method according to claim 1 wherein the deposit material includes the deposit species which is an insulator.
Claim 15
Dependent Claim
14 words
The thin film forming method according to claim 13 wherein insulator is silicon oxide.
Claim 16
Dependent Claim
15 words
The thin film forming method according to claim 1 wherein the deposit species is heated.
Claim 17
Dependent Claim
12 words
The thin forming method according to claim 15 wherein heating is instantaneous.
Claim 18
Dependent Claim
19 words
The think film forming method according to claim 1 wherein the substrate is supported electrostaticaly by a sample holder.
Claim 19
Dependent Claim
19 words
The thin film forming method according to claim 1 wherein the substrate and the reactive gas are vibrated relatively.
Claim 20
Dependent Claim
33 words
The thin film forming method according to any of claims 1, 9, 12, 17 or 18 wherein the step of introducing the reactive gas includes the step of supplying two types of gasses.
Claim 21
Dependent Claim
15 words
The thin film forming method according to claim 19 wherein the substrate is a semiconductor.
Claim 22
Dependent Claim
23 words
The thin film forming method according to claim 19 wherein the step of retaining the temperature includes the step of cooling the substrate.
Claim 23
Dependent Claim
23 words
The thin film forming method according to claim 21 wherein the step of retaining the temperature includes the step of heating the substrate.
Claim 24
Dependent Claim
20 words
The thin film forming method according to claim 20 wherein the deposit species is an insulator which is silicon oxide.
Claim 25
Dependent Claim
15 words
The think film forming method according to claim 19 wherein the deposit species is heated.
Claim 26
Dependent Claim
13 words
The thin film forming method according to claim 23 wherein heating is instantaneous.
Claim 27
Dependent Claim
30 words
The thin film forming method according to claim 19 wherein the first reactive gas includes at least one of oxygen, nitrogen, hydrogen or a gas containing at least halogen element.
Claim 28
Dependent Claim
21 words
The thin film forming method according to claim 19 wherein the first reactive gas includes at least one of inert gases.
Claim 29
Dependent Claim
44 words
The thin film forming method according to claim 19 wherein the first reactive gas includes at least one of oxygen, nitrogen or hydrogen, and the second reactive gas includes at least one element included in the II to VI groups of the periodic table.
Claim 30
Dependent Claim
48 words
The thin film forming method according to claim 19 wherein the first reactive gas includes at least one of hydrogen, nitrogen or a gas containing at least halogen element and second reactive gas includes at least one of organic compounds, halide or carbonyl of the metal or semiconductor.
Claim 31
Dependent Claim
23 words
The thin film forming method according to claim 19 wherein the second reactive gas includes one of tetramethyl silane, hexamethyldisiloxsane or trimetyl silanol.
Claim 32
Dependent Claim
16 words
The thin film forming method according to claim 30 wherein the first reactive gas is oxygen.
Claim 33
Dependent Claim
54 words
The think film forming a method according to claim 31 wherein the flow ratio of the first reactive gas to the second reactive gas at 2 or more and the temperature of the substrate from 20 °C - 100 °C and keeping the total internal pressure of the reaction vessel less than 10 Torr.
Claim 34
Dependent Claim
29 words
The thin film forming method according to claim 30 wherein the step of activating includes the step of radiating the laser beam with the power of 330 Joule/cm² sec.
Claim 35
Dependent Claim
40 words
The thin film forming method according to claim 32 wherein the step of activating includes the step of radiating the laser beam with the wave length of 200 nm or less and with the power of 330 Joule/ cm² sec.
Claim 36
Dependent Claim
45 words
The thin film forming method according to claim 32 wherein the pressure in the reaction vessel and the temperature of the substrate are set at a condition where the contact angle of the liquefied globule of the second reactive gas and the substrate becomes acute.
Claim 37
Dependent Claim
31 words
The thin film forming method according to claim 32 wherein after the forming the deposit species, the substrate is heated at 300 °C or more with flowing oxygen or oxygen radical.
Claim 38
Dependent Claim
57 words
A thin film forming apparatus, comprising; a reaction vessel for accomodating a substrate having a trench or an uneveness; means for supporting the substrate in the vessel; means for introducing a reactive gas into the reaction vessel; means for activating the reactive gas; and means for retaining the temperature below the liquefaction point of the deposit species.
Claim 39
Dependent Claim
57 words
A thin film forming apparatus, comprising; a reaction vessel for accomodating a substrate having a trench or an uneveness; means for supporting the substrate in the vessel; means for introducing a reactive gas into the reaction vessel; means for activating the reactive gas; and means for retaining the temperature below the liquefaction point of the deposit species.
Claim 40
Dependent Claim
24 words
The thin film forming apparatus according to claim 37 wherein the means for activating includes means for generating the plasma within the reaction vessel.
Claim 41
Dependent Claim
25 words
The thin film forming apparatus according to claim 37 wherein the activating means includes means external to the reaction vessel for activating the reactive gas.
Claim 42
Dependent Claim
24 words
The thin film forming apparatus according to claim 37 wherein the activating means includes means within the reaction vessel for activating the reactive gas.
Claim 43
Dependent Claim
23 words
The thin film forming apparatus according to claim 37 wherein the retaining means includes means for cooling the substrate, optionally, cooling the substrate.
Claim 44
Dependent Claim
17 words
The thin film forming apparatus according to calim 37 wherein the supporting means includes a sample holder.
Claim 45
Dependent Claim
17 words
The thin film forming apparatus according to calim 37 wherein the supporting means includes a sample holder.
Claim 46
Dependent Claim
19 words
The thin film forming apparatus according to claim 42 wherein the retaining means is provided within the sample holder.
Claim 47
Dependent Claim
33 words
The thin film forming apparatus according to claim 43 wherein the reaction vessel excepting the sample holder inlcudes means for retaining the temperature not less than the liquefaction point of the deposit species.
Claim 48
Dependent Claim
26 words
The thin film forming apparatus according to claim 37 wherein the reaction vessel includes a reaction area and a receiving and sending area of the substrate.
Claim 49
Dependent Claim
26 words
The thin film forming apparatus according to claim 45 wherein the reaction vessel includes means for separating the reaction area and the receiving and sending area.
Claim 50
Dependent Claim
21 words
The thin film forming apparatus according to claim 45 wherein the receiving and sending area includes means for introducing the vacuum.
Claim 51
Dependent Claim
27 words
The thin film forming apparatus according to claim 45 wherein the receiving and sending area includes means for introducing an inert gas with atmospheric or higher pressure.
Claim 52
Dependent Claim
21 words
The thin film forming apparatus according to claim 37 wherein the introducing means includes plural introducing means for different reaactive gases.
Claim 53
Dependent Claim
72 words
A thin film forming apparatus, comprising; a reaction vessel for accomodating a substrate having a trench or unevenness; means for supporting the substrate in the vessel; means for introducing a reactive gas into the reaction vessel; means for exhausting the reaction vessel; means for activating the reactive gas; means for retaining the temperature below the liquefaction point of the deposit species; and means for vibrating the substrate and the reactive gas relatively.
Claim 54
Dependent Claim
72 words
A thin film forming apparatus, comprising; a reaction vessel for accomodating a substrate having a trench or unevenness; means for supporting the substrate in the vessel; means for introducing a reactive gas into the reaction vessel; means for exhausting the reaction vessel; means for activating the reactive gas; means for retaining the temperature below the liquefaction point of the deposit species; and means for vibrating the substrate and the reactive gas relatively.
Claim 55
Dependent Claim
18 words
The thin forming apparatus according to claim 540 wherein means for vibrating includes means for vibrating the substrate.
Claim 56
Dependent Claim
20 words
The thin film forming apparatus according to claim 50 wherein means for vibrating includes means for vibrating the reactive gas.
References Cited (Backward Citations)
No citation records indexed.
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