Patent US6613702B2 successfully refreshed from Google Patents.
US6613702B2
Expired / Lapsed
US
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Methods of forming capacitor constructions
Assignee: Micron Technology Inc
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Filing: 2003-01-17
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Granted: 2003-09-02
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Expires: 2023-01-17
Abstract
Abstract The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material to increase an oxygen content of the dielectric material. The invention also includes a method of forming a capacitor construction. A first capacitor electrode is formed to be supported by a semiconductor substrate. A dielectric material is formed over the first capacitor electrode. A precursor is provided at a location proximate the dielectric material, and a laser beam is focused at such location. The laser beam generates an activated oxygen species from the precursor. The activated oxygen species contacts the dielectric material. Subsequently, a second capacitor electrode is formed over the dielectric material.
Inventors
- 👤 Gurtej S. Sandhu
- 👤 Trung Tri Doan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:06
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6536; H10P14/6542; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6938; H10P14/6939; H10P14/69393; H10P14/69394; H10P14/69398
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
95 words
A method of forming a capacitor construction comprising: forming a capacitor electrode supported by a semiconductor substrate; forming an oxide material over the capacitor electrode, the oxide material having oxygen-deficient regions therein; providing a precursor proximate the oxide material; focusing a laser beam at a distance of from about 2 mm to about 4 mm above a surface of the oxide material, the laser beam generating an activated oxygen species from the precursor; and contacting the oxide material with the activated oxygen species to at least partially reduce the oxygen deficiency within the oxygen-deficient regions.
Claim 2
Independent Claim
95 words
A method of forming a capacitor construction comprising: forming a capacitor electrode supported by a semiconductor substrate; forming an oxide material over the capacitor electrode, the oxide material having oxygen-deficient regions therein; providing a precursor proximate the oxide material; focusing a laser beam at a distance of from about 2 mm to about 4 mm above a surface of the oxide material, the laser beam generating an activated oxygen species from the precursor; and contacting the oxide material with the activated oxygen species to at least partially reduce the oxygen deficiency within the oxygen-deficient regions.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein the oxide material comprises silicon and wherein the activated oxygen species reacts with the silicon.
Claim 4
Dependent Claim
27 words
The method of claim 1 wherein the oxide material comprises at least one metal selected form the group consisting of hafnium, aluminum, barium, strontium, titanium, and tantalum.
Claim 5
Dependent Claim
23 words
The method of claim 1 wherein the providing the precursor comprises flowing a fluid comprising ozone into a reaction chamber containing the substrate.
Claim 6
Dependent Claim
18 words
The method of claim 1 wherein the substrate comprises a temperature of about 300° C. during the contacting.
Claim 7
Dependent Claim
31 words
The method of claim 1 wherein the laser beam is scanned across the surface and wherein the focal point of the laser beam does not impact the surface during the scanning.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2006-09-01 | 2007-03-03 | 2007-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-09-01 | 2011-03-03 | 2011-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-09-01 | 2015-03-03 | 2015-09-02 | $7700.00 | Window Closed / Lapsed |