US6432793B1
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Oxidative conditioning method for metal oxide layer and applications thereof
Assignee: Micron Technology Inc
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Filing: 1997-12-12
•
Granted: 2002-08-13
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Expires: 2017-12-12
Abstract
Abstract A metal oxide layer may made more highly oxidized by exposing the layer to sulfur trioxide. The leakage current of the layer may thereby be decreased, providing a capacitor containing such a layer with improved performance properties. The capacitor may be incorporated into a dynamic random access memory cell or other structure useful in the semiconductor or other industry.
Inventors
- 👤 Alan R. Reinberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:27
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10D; H10D1/00; H10D1/60; H10D1/68; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; Y; Y10; Y10T; Y10T428/00; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265
Claims Analysis
Total Claims: 69
Claim 1
Independent Claim
121 words
A method of forming a memory cell, the method comprising: providing a substrate having a transistor on a first portion of the substrate, the transistor having a first electrode, and a first conductive layer on a second portion of the substrate; forming a dielectric layer comprising substoichiometric tantalum pentoxide having a first oxygen content, the dielectric layer overlying the first conductive layer; conditioning the dielectric layer with sulfur trioxide to define a more highly oxidized tantalum pentoxide layer having a second oxygen content, wherein the second oxygen content is greater than the first oxygen content; forming a second conductive layer overlying the more highly oxidized tantalum pentoxide layer; and coupling the first electrode of the transistor to the first conductive layer.
Claim 2
Independent Claim
121 words
A method of forming a memory cell, the method comprising: providing a substrate having a transistor on a first portion of the substrate, the transistor having a first electrode, and a first conductive layer on a second portion of the substrate; forming a dielectric layer comprising substoichiometric tantalum pentoxide having a first oxygen content, the dielectric layer overlying the first conductive layer; conditioning the dielectric layer with sulfur trioxide to define a more highly oxidized tantalum pentoxide layer having a second oxygen content, wherein the second oxygen content is greater than the first oxygen content; forming a second conductive layer overlying the more highly oxidized tantalum pentoxide layer; and coupling the first electrode of the transistor to the first conductive layer.
Claim 3
Dependent Claim
15 words
The method of claim 1 wherein the memory cell is a dynamic random access memory.
Claim 4
Dependent Claim
10 words
The method of claim 1 wherein the substrate comprises silicon.
Claim 5
Dependent Claim
31 words
The method of claim 1 wherein the first conductive layer comprises a material selected from the group consisting of: a conductive metal, a conductive metal compound, and a conductive metal alloy.
Claim 6
Dependent Claim
62 words
The method of claim 4 wherein the first conductive layer comprises a material selected from the group consisting of platinum, ruthenium, palladium, iridium, rhenium, rhodium, gold, silver, ruthenium oxide, tin oxide, indium oxide, rhenium oxide, osmium oxide, rhodium oxide, iridium oxide, doped tin oxide, indium oxide, zinc oxide, YBa 2 Cu 3 O 7−x , (La,Sr)CoO 3 , and SrRuO 3 .
Claim 7
Dependent Claim
17 words
The method of claim 1 wherein the dielectric layer is formed by chemical vapor deposition or sputtering.
Claim 8
Dependent Claim
20 words
The method of claim 1 wherein the conditioning step is performed at a temperature ranging from 100° to 600° C.
Claim 9
Dependent Claim
20 words
The method of claim 1 wherein the conditioning step is performed at a pressure ranging from 0.1 to 10 atmospheres.
Claim 10
Dependent Claim
20 words
The method of claim 1 wherein the conditioning step is performed for a time period of at least 10 minutes.
Claim 11
Dependent Claim
22 words
The method of claim 9 wherein the conditioning step is performed for a time period of ranging from 10 to 120 minutes.
Claim 12
Dependent Claim
20 words
The method of claim 1 wherein the stoichiometric tantalum pentoxide layer has a thickness ranging from 5 to 200 Angstroms.
Claim 13
Dependent Claim
31 words
The method of claim 1 wherein the second conductive layer comprises a material selected from the group consisting of a conductive metal, a conductive metal compound, and a conductive metal alloy.
Claim 14
Dependent Claim
71 words
The method of claim 12 wherein the second conductive layer comprises a material selected from the group consisting of platinum, palladium, ruthenium, rhodium, gold, iridium, silver, titanium nitride, ruthenium nitride, tin nitride, zirconium nitride, tungsten nitride, ruthenium dioxide, tin oxide, zinc oxide, doped zinc oxide, iridium oxide, titanium silicide, tantalum silicide, tungsten silicide, molybdenum silicide, nickel silicide, tantalum carbide, titanium boride, tantalum titanium molybdenum, tungsten, aluminum, doped silicon, and doped germanium.
Claim 15
Independent Claim
74 words
A method of forming a capacitor, the method comprising: providing a substrate carrying a first conductive layer; forming a first metal oxide layer overlying the first conductive layer, the first metal oxide layer being substoichiometric; defining a second metal oxide layer by exposing the first metal oxide layer to sulfur trioxide under reaction conditions effective to oxidize the first metal oxide layer; and forming a second conductive layer overlying the second metal oxide layer.
Claim 16
Independent Claim
74 words
A method of forming a capacitor, the method comprising: providing a substrate carrying a first conductive layer; forming a first metal oxide layer overlying the first conductive layer, the first metal oxide layer being substoichiometric; defining a second metal oxide layer by exposing the first metal oxide layer to sulfur trioxide under reaction conditions effective to oxidize the first metal oxide layer; and forming a second conductive layer overlying the second metal oxide layer.
Claim 17
Dependent Claim
10 words
The method of claim 14 wherein the substrate comprises silicon.
Claim 18
Dependent Claim
31 words
The method of claim 14 wherein the first conductive layer comprises a material selected from the group consisting of a conductive metal, a conductive metal compound, and a conductive metal alloy.
Claim 19
Dependent Claim
62 words
The method of claim 16 wherein the first conductive layer comprises a material selected from the group consisting of platinum, ruthenium, palladium, iridium, rhenium, rhodium, gold, silver, ruthenium oxide, tin oxide, indium oxide, rhenium oxide, osmium oxide, rhodium oxide, iridium oxide, doped tin oxide, indium oxide, zinc oxide, YBa 2 Cu 3 O 7−x , (La,Sr)CoO 3 , and SrRuO 3 .
Claim 20
Dependent Claim
18 words
The method of claim 14 wherein the first metal oxide layer comprises an oxide of a transition metal.
Claim 21
Dependent Claim
15 words
The method of claim 18 wherein the first metal oxide layer is substoichiometric tantalum pentoxide.
Claim 22
Dependent Claim
19 words
The method of claim 14 wherein the first metal oxide layer is formed by chemical vapor deposition or sputtering.
Claim 23
Dependent Claim
16 words
The method of claim 14 wherein the second metal oxide layer is substantially stoichiometric tantalum pentoxide.
Claim 24
Dependent Claim
20 words
The method of claim 14 wherein the second metal oxide layer has a thickness ranging from 5 to 200 Angstroms.
Claim 25
Dependent Claim
20 words
The method of claim 14 wherein the exposing step is performed at a temperature ranging from 100° to 600° C.
Claim 26
Dependent Claim
20 words
The method of claim 14 wherein the exposing step is performed at a pressure ranging from 0.1 to 10 atmospheres.
Claim 27
Dependent Claim
21 words
The method of claim 14 wherein the exposing step is performed for a time period of at least 10 minutes .
Claim 28
Dependent Claim
21 words
The method of claim 25 wherein the exposing step is performed for a time period ranging from 10 to 120 minutes.
Claim 29
Dependent Claim
27 words
The method of claim 14 wherein the second conductive layer comprises a material selected from a conductive metal, a conductive metal compound, and a conductive metal alloy.
Claim 30
Dependent Claim
71 words
The method of claim 27 wherein the second conductive layer comprises a material selected from the group consisting of platinum, palladium, ruthenium, rhodium, gold, iridium, silver, titanium nitride, ruthenium nitride, tin nitride, zirconium nitride, tungsten nitride, ruthenium dioxide, tin oxide, zinc oxide, doped zinc oxide, iridium oxide, titanium silicide, tantalum silicide, tungsten silicide, molybdenum silicide, nickel silicide, tantalum carbide, titanium boride, tantalum titanium molybdenum, tungsten, aluminum, doped silicon, and doped germanium.
Claim 31
Independent Claim
59 words
A method of increasing the oxygen content of a substoichiometric metal oxide layer, the method comprising: placing the substoichiometric metal oxide layer in a processing station; and exposing the substoichiometric metal oxide layer, while the substoichiometric met al oxide layer is in the processing station, to sulfur trioxide under reaction conditions effective to oxidize the substoichiometric metal oxide layer.
Claim 32
Independent Claim
59 words
A method of increasing the oxygen content of a substoichiometric metal oxide layer, the method comprising: placing the substoichiometric metal oxide layer in a processing station; and exposing the substoichiometric metal oxide layer, while the substoichiometric met al oxide layer is in the processing station, to sulfur trioxide under reaction conditions effective to oxidize the substoichiometric metal oxide layer.
Claim 33
Dependent Claim
18 words
The method of claim 29 wherein the substoichiometric metal oxide layer comprises an oxide of a transition metal.
Claim 34
Dependent Claim
15 words
The method of claim 30 wherein the substoichiometric metal oxide layer is substoichiometric tantalum pentoxide.
Claim 35
Dependent Claim
19 words
The method of claim 29 wherein the substoichiometric metal oxide layer is formed by chemical vapor deposition or sputtering.
Claim 36
Dependent Claim
20 words
The method of claim 29 wherein the substoichiometric metal oxide layer has a thickness ranging from 5 to 200 Angstroms.
Claim 37
Dependent Claim
16 words
The method of claim 29 where in the processing station is a chemical vapor deposition chamber.
Claim 38
Dependent Claim
20 words
The method of claim 29 wherein the exposing step is performed at a temperature ranging from 1000 to 600° C.
Claim 39
Dependent Claim
20 words
The method of claim 29 wherein the exposing step is performed at a pressure ranging from 0.1 to 10 atmospheres.
Claim 40
Dependent Claim
20 words
The method of claim 29 wherein the exposing step is performed for a time period of at least 10 minutes.
Claim 41
Dependent Claim
22 words
The method of claim 37 wherein the exposing step is performed for a time period of ranging from 10 to 120 minutes.
Claim 42
Independent Claim
63 words
A method of forming a selected metal oxide layer overlying a substrate, the method comprising: forming a first metal oxide layer having a first oxygen content overlying the substrate; and conditioning the first metal oxide layer with sulfur trioxide to define the selected metal oxide layer having a second oxygen content, wherein the second oxygen content is greater than the first oxygen content.
Claim 43
Independent Claim
63 words
A method of forming a selected metal oxide layer overlying a substrate, the method comprising: forming a first metal oxide layer having a first oxygen content overlying the substrate; and conditioning the first metal oxide layer with sulfur trioxide to define the selected metal oxide layer having a second oxygen content, wherein the second oxygen content is greater than the first oxygen content.
Claim 44
Dependent Claim
15 words
The method of claim 39 wherein the substrate comprises silicon having a first conductive layer.
Claim 45
Dependent Claim
18 words
The method of claim 39 wherein the first metal oxide layer comprises an oxide of a transition metal.
Claim 46
Dependent Claim
15 words
The method of claim 41 wherein the first metal oxide layer is substoichiometric tantalum pentoxide.
Claim 47
Dependent Claim
19 words
The method of claim 39 wherein the first metal oxide layer is formed by chemical vapor deposition or sputtering.
Claim 48
Dependent Claim
20 words
The method of claim 39 wherein the conditioning step is performed at a temperature ranging from 100° to 600° C.
Claim 49
Dependent Claim
20 words
The method of claim 39 wherein the conditioning step is performed at a pressure ranging from 0.1 to 10 atmospheres.
Claim 50
Dependent Claim
20 words
The method of claim 39 wherein the conditioning step is performed for a time period of at least 10 minutes.
Claim 51
Dependent Claim
21 words
The method of claim 46 wherein the exposing step is performed for a time period ranging from 10 to 120 minutes.
Claim 52
Dependent Claim
20 words
The method of claim 39 wherein the first metal oxide layer has a thickness ranging from 5 to 200 Angstroms.
Claim 53
Dependent Claim
18 words
The method of claim 39 wherein the selected metal oxide layer comprises an oxide of a transition metal.
Claim 54
Dependent Claim
16 words
The method of claim 39 wherein the selected metal oxide layer is substantially stoichiometric tantalum pentoxide.
Claim 55
Independent Claim
150 words
A method of forming a computer, the method comprising: providing a data input device; providing a data output device; providing computing circuitry coupled to the data input and output devices, the computing circuitry including a memory cell, the memory cell is formed by steps comprising: providing a transistor on a first portion of a substrate, the transistor having a first electrode; forming a first conductive layer on a second portion of the substrate; forming a dielectric layer comprising substoichiometric tantalum pentoxide having a first leakage current, the dielectric layer overlying the first conductive layer; conditioning the dielectric layer with sulfur trioxide to define a substantially stoichiometric tantalum pentoxide layer having a second leakage current, wherein the second leakage current is less than the first leakage current; forming a second conductive layer overlying the stoichiometric tantalum pentoxide layer; and coupling the first electrode of the transistor to the first conductive layer.
Claim 56
Independent Claim
150 words
A method of forming a computer, the method comprising: providing a data input device; providing a data output device; providing computing circuitry coupled to the data input and output devices, the computing circuitry including a memory cell, the memory cell is formed by steps comprising: providing a transistor on a first portion of a substrate, the transistor having a first electrode; forming a first conductive layer on a second portion of the substrate; forming a dielectric layer comprising substoichiometric tantalum pentoxide having a first leakage current, the dielectric layer overlying the first conductive layer; conditioning the dielectric layer with sulfur trioxide to define a substantially stoichiometric tantalum pentoxide layer having a second leakage current, wherein the second leakage current is less than the first leakage current; forming a second conductive layer overlying the stoichiometric tantalum pentoxide layer; and coupling the first electrode of the transistor to the first conductive layer.
Claim 57
Dependent Claim
14 words
The method of claim 51 wherein the memory cell is dynamic random access memory.
Claim 58
Dependent Claim
10 words
The method of claim 51 wherein the substrate comprises silicon.
Claim 59
Dependent Claim
31 words
The method of claim 51 wherein the first conductive layer comprises a material selected from the group consisting of a conductive metal, a conductive metal compound, and a conductive metal alloy.
Claim 60
Dependent Claim
62 words
The method of claim 54 wherein the first conductive layer comprises a material selected from the group consisting of platinum, ruthenium, palladium, iridium, rhenium, rhodium, gold, silver, ruthenium oxide, tin oxide, indium oxide, rhenium oxide, osmium oxide, rhodium oxide, iridium oxide, doped tin oxide, indium oxide, zinc oxide, YBa 2 Cu 3 O 7−x , (La,Sr)CoO 3 , and SrRuO 3 .
Claim 61
Dependent Claim
17 words
The method of claim 51 wherein the dielectric layer is formed by chemical vapor deposition or sputtering.
Claim 62
Dependent Claim
20 words
The method of claim 51 wherein the conditioning step is performed at a temperature ranging from 100° to 600° C.
Claim 63
Dependent Claim
20 words
The method of claim 51 wherein the conditioning step is performed at a pressure ranging from 0.1 to 10 atmospheres.
Claim 64
Dependent Claim
20 words
The method of claim 53 wherein the conditioning step is performed for a time period of at least 10 minutes.
Claim 65
Dependent Claim
22 words
The method of claim 59 wherein the conditioning step is performed for a time period of ranging from 10 to 120 minutes.
Claim 66
Dependent Claim
20 words
The method of claim 51 wherein the stoichiometric tantalum pentoxide layer has a thickness ranging from 5 to 200 Angstroms.
Claim 67
Dependent Claim
16 words
The method of claim 51 wherein the second dielectric constant is ranges from 15 to 23.
Claim 68
Dependent Claim
30 words
The method of claim 51 wherein the second conductive layer comprises a material selected from the group of a conductive metal, a conductive metal compound, and a conductive metal alloy.
Claim 69
Dependent Claim
71 words
The method of claim 63 wherein the second conductive layer comprises a material selected from the group consisting of platinum, palladium, ruthenium, rhodium, gold, iridium, silver, titanium nitride, ruthenium nitride, tin nitride, zirconium nitride, tungsten nitride, ruthenium dioxide, tin oxide, zinc oxide, doped zinc oxide, iridium oxide, titanium silicide, tantalum silicide, tungsten silicide, molybdenum silicide, nickel silicide, tantalum carbide, titanium boride, tantalum titanium molybdenum, tungsten, aluminum, doped silicon, and doped germanium.
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