US6149828A
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Supercritical etching compositions and method of using same
Assignee: Micron Technology Inc
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Filing: 1997-05-05
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Granted: 2000-11-21
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Expires: 2017-05-05
Abstract
Abstract A supercritical etching composition and method for etching an inorganic material of a semiconductor-based substrate are provided. The method includes providing a semiconductor-based substrate having an exposed inorganic material and exposing the substrate to the supercritical etching composition, whereby exposed inorganic material is removed from the substrate. In one embodiment, the supercritical etching composition includes a supercritical component, which is not capable of etching a particular exposed inorganic material, and a nonsupercritical etching component, which is capable of etching the particular exposed inorganic material. In another embodiment, the supercritical etching composition includes a supercritical component, which is capable of etching the particular exposed inorganic material.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:36
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; C; C23; C23F; C23F1/00; C23F1/10; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/28; H10P50/282; H10P50/283; H10P72/0418; H10P72/0421
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
50 words
A method for etching an inorganic material of a substrate, the method comprising: providing a semiconductor-based substrate having an exposed inorganic material; and exposing the substrate to a supercritical etching composition consisting essentially of a supercritical component, to remove at least a portion of the inorganic material from the substrate.
Claim 2
Independent Claim
50 words
A method for etching an inorganic material of a substrate, the method comprising: providing a semiconductor-based substrate having an exposed inorganic material; and exposing the substrate to a supercritical etching composition consisting essentially of a supercritical component, to remove at least a portion of the inorganic material from the substrate.
Claim 3
Dependent Claim
59 words
The method of claim 1, wherein the step of providing the semiconductor-based substrate comprises providing a semiconductor-based substrate having an exposed inorganic material, wherein the inorganic material is selected from the group of silicon, thermally grown silicon dioxide, chemical vapor deposited silicon dioxide, silicon nitride, aluminum, copper, borophosphosilicate glass, titanium nitride, titanium, high dielectric constant materials, and combinations thereof.
Claim 4
Dependent Claim
60 words
The method of claim 2, wherein the step of providing the semiconductor-based substrate comprises providing a semiconductor-based substrate having an exposed high dielectric constant material selected from the group of tantalum pentoxide, yttria, titanium dioxide, strontium bismuth titanate, lead zirconate titanate, lanthanum-doped lead zirconate titanate, barium strontium titanate, bismuth titanate, strontium titanate, barium titanate, strontium bismuth tantalate, and combinations thereof.
Claim 5
Dependent Claim
38 words
The method of claim 1, wherein the step of providing the substrate comprises providing a substrate having a patterned mask layer thereon, and wherein the material removed from the substrate comprises exposed material under the patterned mask layer.
Claim 6
Dependent Claim
21 words
The method of claim 1, wherein the step of exposing the substrate comprises exposing the substrate to an aqueous supercritical component.
Claim 7
Dependent Claim
40 words
The method of claim 1, wherein the step of exposing the substrate comprises exposing the substrate to a supercritical component selected from the group of an oxidizer, a buffering agent, a surfactant, a selectivity enhancer, a ligand, and combinations thereof.
Claim 8
Dependent Claim
53 words
The method of claim 1, wherein the step of exposing the substrate comprises exposing the substrate to a supercritical component selected from the group of ammonia, an amine, an alcohol, water, carbon dioxide, nitrous oxide, an inert gas, a hydrogen halide, boron trichloride, chlorine, fluorine, a hydrocarbon, a fluorocarbon, hexafluoroacetylacetone, and combinations thereof.
Claim 9
Dependent Claim
49 words
The method of claim 1, wherein the step of exposing the substrate comprises exposing the substrate to a supercritical etching composition consisting essentially of a supercritical component selected from the group of ammonia, hydrofluoric acid, acetic acid, nitrous oxide, nitrogen trifluoride, hydrochloric acid, hydrobromic acid, water, and combinations thereof.
Claim 10
Dependent Claim
29 words
The method of claim 6 wherein the oxidizer is selected from the group consisting of hydrogen peroxide, nitrogen trifluoride, ozone, oxygen, halogens, sulfur dioxide, sulfur trioxide, and combinations thereof.
Claim 11
Dependent Claim
27 words
The method of claim 6 wherein the selectivity enhancer is selected from the group consisting of tetramethyl ammonium hydroxide, tetramethyl nitrogen fluoride, ammonium fluoride, and combinations thereof.
Claim 12
Independent Claim
45 words
A method for etching an inorganic material of a substrate, the method comprising: providing a semiconductor-based substrate having an exposed inorganic material; and exposing the substrate to a non-aqueous supercritical etching composition to remove at least a portion of the inorganic material from the substrate.
Claim 13
Independent Claim
45 words
A method for etching an inorganic material of a substrate, the method comprising: providing a semiconductor-based substrate having an exposed inorganic material; and exposing the substrate to a non-aqueous supercritical etching composition to remove at least a portion of the inorganic material from the substrate.
Claim 14
Independent Claim
117 words
A method for etching an inorganic material of a substrate, the method comprising: providing a semiconductor-based substrate having an exposed inorganic material; and exposing the substrate to a supercritical etching composition comprising a supercritical component selected from the group of an alcohol, water, carbon dioxide, nitrous oxide, an inert gas, a hydrogen halide, boron trichloride, chlorine, fluorine, a hydrocarbon, a fluorocarbon, hexafluoroacetylacetone, and combinations thereof, and a nonsupercritical etching component selected from the group of hydrofluoric acid, phosphoric acid, nitric acid, acetic acid, hydrochloric acid, sulfuric acid, hydrogen peroxide, nitrous oxide, nitrogen trifluoride, sulfur hexafluoride, ozone, sulfur dioxide, sulfur trioxide, hexafluoroacetylacetone, and combinations thereof to remove at least a portion of the inorganic material from the substrate.
Claim 15
Independent Claim
117 words
A method for etching an inorganic material of a substrate, the method comprising: providing a semiconductor-based substrate having an exposed inorganic material; and exposing the substrate to a supercritical etching composition comprising a supercritical component selected from the group of an alcohol, water, carbon dioxide, nitrous oxide, an inert gas, a hydrogen halide, boron trichloride, chlorine, fluorine, a hydrocarbon, a fluorocarbon, hexafluoroacetylacetone, and combinations thereof, and a nonsupercritical etching component selected from the group of hydrofluoric acid, phosphoric acid, nitric acid, acetic acid, hydrochloric acid, sulfuric acid, hydrogen peroxide, nitrous oxide, nitrogen trifluoride, sulfur hexafluoride, ozone, sulfur dioxide, sulfur trioxide, hexafluoroacetylacetone, and combinations thereof to remove at least a portion of the inorganic material from the substrate.
Claim 16
Independent Claim
57 words
A method for etching an inorganic material of a substrate, the method comprising: providing a semiconductor-based substrate having an exposed inorganic material; and exposing the substrate to a supercritical etching composition comprising at least one aqueous supercritical component and at least one nonsupercritical component to remove at least a portion of the inorganic material from the substrate.
Claim 17
Independent Claim
57 words
A method for etching an inorganic material of a substrate, the method comprising: providing a semiconductor-based substrate having an exposed inorganic material; and exposing the substrate to a supercritical etching composition comprising at least one aqueous supercritical component and at least one nonsupercritical component to remove at least a portion of the inorganic material from the substrate.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-11-21 | 2004-05-22 | 2004-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-21 | 2008-05-22 | 2008-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-21 | 2012-05-22 | 2012-11-21 | $7700.00 | Window Closed / Lapsed |