US6764956B2
Expired / Lapsed
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Methods of treating dielectric materials
Assignee: Micron Technology Inc
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Filing: 2002-08-23
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Granted: 2004-07-20
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Expires: 2022-08-23
Abstract
Abstract The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material to increase an oxygen content of the dielectric material. The invention also includes a method of forming a capacitor construction. A first capacitor electrode is formed to be supported by a semiconductor substrate. A dielectric material is formed over the first capacitor electrode. A precursor is provided at a location proximate the dielectric material, and a laser beam is focused at such location. The laser beam generates an activated oxygen species from the precursor. The activated oxygen species contacts the dielectric material. Subsequently, a second capacitor electrode is formed over the dielectric material.
Inventors
- 👤 Gurtej S. Sandhu
- 👤 Trung Tri Doan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:42
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6536; H10P14/6542; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6938; H10P14/6939; H10P14/69393; H10P14/69394; H10P14/69398
Claims Analysis
Total Claims: 51
Claim 1
Independent Claim
68 words
A method of reducing current leakage through at least a portion of a dielectric material of a semiconductor construction comprising: providing the semiconductor construction within a reactor; flowing an ozone-comprising fluid into the reactor; and utilizing a laser to generate from the ozone-comprising fluid, one or more activated species which react with a component of the dielectric material to reduce the leakage of current through the dielectric material.
Claim 2
Independent Claim
68 words
A method of reducing current leakage through at least a portion of a dielectric material of a semiconductor construction comprising: providing the semiconductor construction within a reactor; flowing an ozone-comprising fluid into the reactor; and utilizing a laser to generate from the ozone-comprising fluid, one or more activated species which react with a component of the dielectric material to reduce the leakage of current through the dielectric material.
Claim 3
Dependent Claim
28 words
The method of claim 1 wherein the activated species comprises an activated oxygen species which reacts with the component to increase an oxygen content of the dielectric material.
Claim 4
Dependent Claim
37 words
The method of claim 1 wherein the dielectric material comprises oxygen and one or more non-oxygen components, and wherein the activated species comprises an activated oxygen species which reacts with at least one of the non-oxygen components.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein the dielectric material is a predominantly inorganic material.
Claim 6
Dependent Claim
31 words
The method of claim 1 wherein the dielectric material comprises tantalum and oxygen, and wherein the activated species comprises a species which reacts with the tantalum component of the dielectric material.
Claim 7
Independent Claim
66 words
A method of increasing a dielectric constant of at least a portion of a dielectric material of a semiconductor comprising: providing the semiconductor within a reactor; flowing an ozone-comprising fluid into the reactor; and utilizing a laser to generate from the ozone-comprising fluid, one or more activated species which react with a component of the dielectric material to increase the dielectric constant of the dielectric material.
Claim 8
Independent Claim
66 words
A method of increasing a dielectric constant of at least a portion of a dielectric material of a semiconductor comprising: providing the semiconductor within a reactor; flowing an ozone-comprising fluid into the reactor; and utilizing a laser to generate from the ozone-comprising fluid, one or more activated species which react with a component of the dielectric material to increase the dielectric constant of the dielectric material.
Claim 9
Dependent Claim
28 words
The method of claim 6 wherein the activated species comprises an activated oxygen species which reacts with the component to increase an oxygen content of the dielectric material.
Claim 10
Dependent Claim
37 words
The method of claim 6 wherein the dielectric material comprises oxygen and one or more non-oxygen components, and wherein the activated species comprises an activated oxygen species which reacts with at least one of the non-oxygen components.
Claim 11
Dependent Claim
14 words
The method of claim 6 wherein the dielectric material is a predominantly inorganic material.
Claim 12
Dependent Claim
31 words
The method of claim 9 wherein the dielectric material comprises tantalum and oxygen, and wherein the activated species comprises a species which reacts with the tantalum component of the dielectric material.
Claim 13
Independent Claim
62 words
A method of treating a predominantly inorganic dielectric material on a semiconductor wafer comprising: providing the semiconductor wafer within a reactor; flowing an ozone-comprising fluid into the reactor; and utilizing a laser to generate from the ozone-comprising fluid, at least one activated oxygen species which reacts with a component of the dielectric material to increase an oxygen content of the dielectric material.
Claim 14
Independent Claim
62 words
A method of treating a predominantly inorganic dielectric material on a semiconductor wafer comprising: providing the semiconductor wafer within a reactor; flowing an ozone-comprising fluid into the reactor; and utilizing a laser to generate from the ozone-comprising fluid, at least one activated oxygen species which reacts with a component of the dielectric material to increase an oxygen content of the dielectric material.
Claim 15
Dependent Claim
22 words
The method of claim 11 wherein the activated oxygen species comprises a component formed by impacting O 3 with the laser beam.
Claim 16
Dependent Claim
33 words
The method of claim 11 wherein the dielectric material comprises a metal and oxygen, and wherein the activated oxygen species comprises a component which reacts with the metal component of the dielectric material.
Claim 17
Dependent Claim
32 words
The method of claim 11 wherein the dielectric material comprises tantalum and oxygen, and wherein the activated oxygen species comprises a component which reacts with the tantalum component of the dielectric material.
Claim 18
Dependent Claim
32 words
The method of claim 11 wherein the dielectric material comprises silicon and oxygen, and wherein the activated oxygen species comprises a component which reacts with the silicon component of the dielectric material.
Claim 19
Dependent Claim
59 words
The method of claim 11 wherein the wafer comprises a center, a first edge and an opposing second edge; the first edge being spaced from the opposing second edge by a distance across the center of the wafer, and wherein the laser beam comprises a region which extends a majority of the distance across the center of the wafer.
Claim 20
Dependent Claim
59 words
The method of claim 11 wherein the wafer comprises a center, a first edge and an opposing second edge; the first edge being spaced from the opposing second edge by a distance across the center of the wafer, and wherein the laser beam comprises a region which extends an entirety of the distance across the center of the wafer.
Claim 21
Dependent Claim
31 words
The method of claim 11 further comprising incorporating the treated dielectric material into a capacitor construction as at least a portion of a dielectric region between a pair of capacitor electrodes.
Claim 22
Independent Claim
66 words
A method of treating a predominantly inorganic dielectric material on a semiconductor wafer comprising: providing the semiconductor wafer into a reaction chamber; generating ozone to produce an ozone-comprising fluid; flowing the ozone-comprising fluid into the reaction chamber; and passing a laser beam across at least a portion of a surface of the dielectric material to generate at least one activated species which contacts the dielectric material.
Claim 23
Independent Claim
66 words
A method of treating a predominantly inorganic dielectric material on a semiconductor wafer comprising: providing the semiconductor wafer into a reaction chamber; generating ozone to produce an ozone-comprising fluid; flowing the ozone-comprising fluid into the reaction chamber; and passing a laser beam across at least a portion of a surface of the dielectric material to generate at least one activated species which contacts the dielectric material.
Claim 24
Dependent Claim
21 words
The method of claim 19 wherein the laser beam is passed across an entirety of the surface of the dielectric material.
Claim 25
Dependent Claim
23 words
The method of claim 19 wherein the passing the laser beam across the surface comprises moving the wafer relative to the laser beam.
Claim 26
Dependent Claim
23 words
The method of claim 19 wherein the passing the laser beam across the surface comprises moving the laser beam relative to the wafer.
Claim 27
Dependent Claim
40 words
The method of claim 19 wherein the laser beam comprises a region which extends a majority of a distance from one edge of the wafer to an opposing edge across a center of the wafer relative to said one edge.
Claim 28
Dependent Claim
40 words
The method of claim 19 wherein the laser beam comprises a region which extends an entirety of a distance from one edge of the wafer to an opposing edge across a center of the wafer relative to said one edge.
Claim 29
Dependent Claim
51 words
The method of claim 19 wherein the laser beam comprises a focussed region, said focussed region being in a shape of a band which extends a majority of a distance from one edge of the wafer to an opposing edge across a center of the wafer relative to said one edge.
Claim 30
Dependent Claim
51 words
The method of claim 19 wherein the laser beam comprises a focussed region, said focussed region being in a shape of a band which extends an entirety of a distance from one edge of the wafer to an opposing edge across a center of the wafer relative to said one edge.
Claim 31
Dependent Claim
62 words
The method of claim 19 wherein the laser beam is focussed at a location above the surface of the dielectric material, and wherein the laser beam impacts a substance at the location to form the at least one activated species; the at least one activated species migrating from the location to the surface of the dielectric material to contact said dielectric material.
Claim 32
Dependent Claim
70 words
The method of claim 19 wherein the laser beam is focussed at a location from about 2 mm to about 4 mm above the surface of the dielectric material, and wherein the laser beam impacts a substance at the location to form the at least one activated species; the at least one activated species migrating from the location to the surface of the dielectric material to contact said dielectric material.
Claim 33
Dependent Claim
20 words
The method of claim 28 wherein the substance comprises O 3 , and wherein the activated species include activated oxygen.
Claim 34
Dependent Claim
12 words
The method of claim 19 wherein the activated species include activated oxygen.
Claim 35
Dependent Claim
31 words
The method of claim 19 further comprising incorporating the treated dielectric material into a capacitor construction as at least a portion of a dielectric region between a pair of capacitor electrodes.
Claim 36
Independent Claim
55 words
A method of treating a predominantly inorganic dielectric material, comprising: introducing an ozone-comprising precursor into a reaction chamber to at a location proximate the dielectric material; providing a laser beam focussed at the location, the laser beam generating an activated oxygen species from the precursor; and contacting the activated oxygen species with the dielectric material.
Claim 37
Independent Claim
55 words
A method of treating a predominantly inorganic dielectric material, comprising: introducing an ozone-comprising precursor into a reaction chamber to at a location proximate the dielectric material; providing a laser beam focussed at the location, the laser beam generating an activated oxygen species from the precursor; and contacting the activated oxygen species with the dielectric material.
Claim 38
Dependent Claim
29 words
The method of claim 32 wherein the precursor comprises O 3 diluted to a concentration of from at least about 1% to less than 100% in O 2 .
Claim 39
Dependent Claim
24 words
The method of claim 32 wherein the location is from about 2 mm to about 4 mm above a surface of the dielectric material.
Claim 40
Dependent Claim
41 words
The method of claim 32 wherein the dielectric material comprises an oxide of a material, and wherein the activated oxygen species reacts with portions of the material that are not fully oxidized to increase an amount of oxidation of such portions.
Claim 41
Dependent Claim
49 words
The method of claim 32 wherein the dielectric material comprises tantalum oxide, and wherein the activated oxygen species reacts with portions of the tantalum oxide that have a higher ratio of tantalum to oxygen than Ta 2 O 5 to convert such portions to Ta 2 O 5 .
Claim 42
Dependent Claim
38 words
The method of claim 32 wherein the dielectric material comprises silicon and oxygen, and wherein the activated oxygen species reacts with portions of the dielectric material to decrease the ratio of silicon to oxygen within the dielectric material.
Claim 43
Dependent Claim
98 words
The method of claim 32 wherein the dielectric material comprises tantalum oxide over a mass of Si x O y N z , wherein x, y and z are greater than 0, and wherein the activated oxygen species reacts with one or both of (1) portions of the tantalum oxide that have a higher ratio of tantalum to oxygen than Ta 2 O 5 to convert such portions to Ta 2 O 5 ; and (2) portions of the mass of Si x O y N z to decrease the ratio of silicon to oxygen within the mass.
Claim 44
Dependent Claim
19 words
The method of claim 32 wherein the precursor is a fluid flowed across a surface of the dielectric material.
Claim 45
Dependent Claim
19 words
The method of claim 32 wherein the precursor is a gas flowed across a surface of the dielectric material.
Claim 46
Dependent Claim
31 words
The method of claim 32 further comprising incorporating the treated dielectric material into a capacitor construction as at least a portion of a dielectric region between a pair of capacitor electrodes.
Claim 47
Dependent Claim
36 words
The method of claim 1 wherein the dielectric material comprises at least one member selected from the group consisting of tantalum oxide, aluminum oxide, hafnium oxide, titanium oxide, strontium titanate, barium strontium titanate, and silicon oxynitride.
Claim 48
Dependent Claim
36 words
The method of claim 6 wherein the dielectric material comprises at least one member selected from the group consisting of tantalum oxide, aluminum oxide, hafnium oxide, titanium oxide, strontium titanate, barium strontium titanate, and silicon oxynitride.
Claim 49
Dependent Claim
36 words
The method of claim 11 wherein the dielectric material comprises at least one member selected from the group consisting of tantalum oxide, aluminum oxide, hafnium oxide, titanium oxide, strontium titanate, barium strontium titanate, and silicon oxynitride.
Claim 50
Dependent Claim
34 words
The method of claim 19 wherein the dielectric material comprises at least one member selected from the group consisting of tantalum oxide, aluminum oxide, hafnium oxide, strontium titanate, barium strontium titanate, and silicon oxynitride.
Claim 51
Dependent Claim
36 words
The method of claim 32 wherein the dielectric material comprises at least one member selected from the group consisting of tantalum oxide, aluminum oxide, hafnium oxide, titanium oxide, strontium titanate, barium strontium titanate, and silicon oxynitride.
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